Inventor · disambiguated record
Bassem Salem
Also filed as: SALEM BASSEM
3 granted patents·7 pending applications·4 citations·filing 2008–2023
53Inventor score
Files withCOMMISSARIAT ENERGIE ATOMIQUE7COMMISSARIAT A IENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES2ERNST THOMAS1
Top patents by PatentIndex Score
10 records- 0170US8088674B2Method of growing, on a dielectric material, nanowires made of semi-conductor materials connecting two electrodesERNST THOMAS·Filed 2008·Granted Jan 3, 2012·4 cites·8 claims
- 0251US2023340672A1Device comprising nanowiresCOMMISSARIAT A IENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES·Filed 2020·Application pending·0 cites
- 0350US2024026544A1Forming nanowiresCOMMISSARIAT A IENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES·Filed 2020·Application pending·0 cites
- 0448US2025294920A1Method for forming a layer with the basis of a dielectric material on a layer with the basis of an etched iii-v materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2023·Application pending·0 cites
- 0547US11515394B2Method for the nanoscale etching of a germanium-tin alloy (GeSn) for a FET transistorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Granted Nov 29, 2022·0 cites·13 claims
- 0646US2024234126A1Method for preparing a microelectronic component comprising a layer with a basis of a iii-v materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2022·Application pending·0 cites
- 0746US2022077379A1Piezoelectric device with piezoelectric elongate nano-objectsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Application pending·0 cites
- 0845US12338545B2Method for producing a layer of aluminum nitride (ALN) on a structure of silicon or III-V materialsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Granted Jun 24, 2025·0 cites·18 claims
- 0943US2023290633A1Method for producing a dielectric layer on a structure made of materials iii-vCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Application pending·0 cites
- 1033US2013313525A1Nanowire-based Transistor, Method for Fabricating the Transistor, Semiconductor Component Incorporating the Transistor, Computer Program and Storage Medium Associated with the Fabrication MethodCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Application pending·0 cites
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