Inventor · disambiguated record
Chienfan Yu
Also filed as: YU CHIENFAN
27 granted patents·5 pending applications·1,445 citations·filing 1991–2014
97Inventor score
Top patents by PatentIndex Score
32 records- 0198US6864041B2Gate linewidth tailoring and critical dimension control for sub-100 nm devices using plasma etchingIBM·Filed 2001·Granted Mar 8, 2005·538 cites·12 claims
- 0294US5838055ATrench sidewall patterned by vapor phase etchingIBM·Filed 1997·Granted Nov 17, 1998·135 cites·2 claims
- 0394US5282925ADevice and method for accurate etching and removal of thin filmIBM·Filed 1992·Granted Feb 1, 1994·200 cites·48 claims
- 0485US6884734B2Vapor phase etch trim structure with top etch blocking layerIBM·Filed 2001·Granted Apr 26, 2005·38 cites·38 claims
- 0585US6071815AMethod of patterning sidewalls of a trench in integrated circuit manufacturingIBM·Filed 1998·Granted Jun 6, 2000·63 cites·4 claims
- 0684US5636320ASealed chamber with heating lamps provided within transparent tubesIBM·Filed 1995·Granted Jun 3, 1997·48 cites·20 claims
- 0783US6541320B2Method to controllably form notched polysilicon gate structuresIBM·Filed 2001·Granted Apr 1, 2003·32 cites·24 claims
- 0882US6074951AVapor phase etching of oxide masked by resist or masking materialIBM·Filed 1997·Granted Jun 13, 2000·66 cites·12 claims
- 0982US5876879AOxide layer patterned by vapor phase etchingIBM·Filed 1997·Granted Mar 2, 1999·61 cites·10 claims
- 1082US5766971AOxide strip that improves planarityIBM·Filed 1996·Granted Jun 16, 1998·67 cites·26 claims
- 1171US6518151B1Dual layer hard mask for eDRAM gate etch processIBM·Filed 2001·Granted Feb 11, 2003·14 cites·17 claims
- 1271US6509219B2Fabrication of notched gates by passivating partially etched gate sidewalls and then using an isotropic etchIBM·Filed 2001·Granted Jan 21, 2003·17 cites·32 claims
- 1368US6429067B1Dual mask process for semiconductor devicesIBM·Filed 2001·Granted Aug 6, 2002·15 cites·10 claims
- 1465US6960523B2Method of reducing erosion of a nitride gate cap layer during reactive ion etch of nitride liner layer for bit line contact of DRAM deviceIBM·Filed 2003·Granted Nov 1, 2005·10 cites·15 claims
- 1565US5792275AFilm removal by chemical transformation and aerosol cleanIBM·Filed 1995·Granted Aug 11, 1998·29 cites·9 claims
- 1664US6617085B1Wet etch reduction of gate widthsIBM·Filed 2002·Granted Sep 9, 2003·11 cites·22 claims
- 1764US5286331ASupersonic molecular beam etching of surfacesIBM·Filed 1991·Granted Feb 15, 1994·31 cites·4 claims
- 1857US5423940ASupersonic molecular beam etching of surfacesIBM·Filed 1993·Granted Jun 13, 1995·22 cites·21 claims
- 1952US6890815B2Reduced cap layer erosion for borderless contactsIBM·Filed 2003·Granted May 10, 2005·5 cites·25 claims
- 2050US6419785B1Endpoint detection by chemical reactionIBM·Filed 2000·Granted Jul 16, 2002·2 cites·5 claims
- 2150US2015102463A1High-k and metal filled trench-type edram capacitor with electrode depth and dimension controlIBM·Filed 2014·Application pending·0 cites
- 2249US2009311855A1Method of fabricating a gate structureBRUFF RICHARD A·Filed 2009·Application pending·0 cites
- 2347US9059194B2High-K and metal filled trench-type EDRAM capacitor with electrode depth and dimension controlIBM·Filed 2013·Granted Jun 16, 2015·0 cites·17 claims
- 2447US2009101980A1Method of fabricating a gate structure and the structure thereofIBM·Filed 2007·Application pending·0 cites
- 2547US2009119357A1Advanced correlation and process window evaluation applicationIBM·Filed 2007·Application pending·0 cites
- 2646US6066564AIndirect endpoint detection by chemical reactionIBM·Filed 1998·Granted May 23, 2000·12 cites·15 claims
- 2741US6294102B1Selective dry etch of a dielectric filmIBM·Filed 1999·Granted Sep 25, 2001·10 cites·18 claims
- 2841US6228769B1Endpoint detection by chemical reaction and photoionizationIBM·Filed 1998·Granted May 8, 2001·8 cites·8 claims
- 2938US6180422B1Endpoint detection by chemical reactionIBM·Filed 1998·Granted Jan 30, 2001·5 cites·14 claims
- 3036US2001016226A1Method for preparing the surface of a dielectricIBM·Filed 2001·Application pending·0 cites
- 3133US6656375B1Selective nitride: oxide anisotropic etch processIBM·Filed 1998·Granted Dec 2, 2003·3 cites·15 claims
- 3233US6054328AMethod for cleaning the surface of a dielectricIBM·Filed 1996·Granted Apr 25, 2000·3 cites·22 claims
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