Inventor · disambiguated record
Paul A. Ingersoll
Also filed as: INGERSOLL PAUL A
16 granted patents·1 pending application·437 citations·filing 2000–2007
94Inventor score
Top patents by PatentIndex Score
17 records- 0196US6518146B1Semiconductor device structure and method for formingMOTOROLA INC·Filed 2002·Granted Feb 11, 2003·191 cites·21 claims
- 0292US6887758B2Non-volatile memory device and method for formingFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted May 3, 2005·70 cites·29 claims
- 0389US6713812B1Non-volatile memory device having an anti-punch through (APT) regionMOTOROLA INC·Filed 2002·Granted Mar 30, 2004·48 cites·21 claims
- 0488US6991984B2Method for forming a memory structure using a modified surface topography and structure thereofFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Jan 31, 2006·44 cites·27 claims
- 0584US7491600B2Nanocrystal bitcell process integration for high density applicationFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Feb 17, 2009·11 cites·24 claims
- 0683US7592224B2Method of fabricating a storage device including decontinuous storage elements within and between trenchesFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Sep 22, 2009·10 cites·20 claims
- 0781US7619270B2Electronic device including discontinuous storage elementsFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Nov 17, 2009·9 cites·20 claims
- 0881US7211487B2Process for forming an electronic device including discontinuous storage elementsFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted May 1, 2007·13 cites·20 claims
- 0972US6358816B1Method for uniform polish in microelectronic deviceMOTOROLA INC·Filed 2000·Granted Mar 19, 2002·14 cites·19 claims
- 1069US7642594B2Electronic device including gate lines, bit lines, or a combination thereofFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jan 5, 2010·5 cites·19 claims
- 1161US7208390B2Semiconductor device structure and method for formingFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Apr 24, 2007·10 cites·35 claims
- 1260US7259999B2Non-volatile memory cell array for improved data retention and method of operating thereofFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Aug 21, 2007·4 cites·20 claims
- 1352US6770929B2Method for uniform polish in microelectronic deviceFREESCALE SEMICONDUCTOR INC·Filed 2001·Granted Aug 3, 2004·3 cites·10 claims
- 1448US6898129B2Erase of a memory having a non-conductive storage mediumFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted May 24, 2005·5 cites·23 claims
- 1540US8435898B2First inter-layer dielectric stack for non-volatile memoryADETUTU OLUBUNMI O·Filed 2007·Granted May 7, 2013·0 cites·17 claims
- 1640US7432547B2Non-volatile memory device with improved data retention and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Oct 7, 2008·0 cites·6 claims
- 1737US2003113962A1Non-volatile memory device with improved data retention and method thereforFiled 2001·Application pending·0 cites
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