Inventor · disambiguated record
Shunichi Hiraki
Also filed as: AOYAMA MASAHARU · HIRAKI SHUNICHI · KITANE SHOICHI
20 granted patents·1,063 citations·filing 1976–1995
96Inventor score
Top patents by PatentIndex Score
20 records- 0198US4507673ASemiconductor memory deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted Mar 26, 1985·174 cites·5 claims
- 0297US5126807AVertical MOS transistor and its production methodTOSHIBA KK·Filed 1991·Granted Jun 30, 1992·193 cites·7 claims
- 0396US5321289AVertical MOSFET having trench covered with multilayer gate filmTOSHIBA KK·Filed 1993·Granted Jun 14, 1994·164 cites·6 claims
- 0494US5242845AMethod of production of vertical MOS transistorTOSHIBA KK·Filed 1992·Granted Sep 7, 1993·121 cites·10 claims
- 0592US5282018APower semiconductor device having gate structure in trenchTOSHIBA KK·Filed 1993·Granted Jan 25, 1994·103 cites·11 claims
- 0682US4485393ASemiconductor device with selective nitride layer over channel stopTOKYO SHIBAURA ELECTRIC CO·Filed 1981·Granted Nov 27, 1984·37 cites·6 claims
- 0781US4589004ASemiconductor device monolithically comprising a V-MOSFET and bipolar transistor isolated from each otherTOKYO SHIBAURA ELECTRIC CO·Filed 1984·Granted May 13, 1986·54 cites·3 claims
- 0872US4729966AProcess for manufacturing a Schottky FET device using metal sidewalls as gatesTOSHIBA KK·Filed 1986·Granted Mar 8, 1988·29 cites·6 claims
- 0969US4379726AMethod of manufacturing semiconductor device utilizing outdiffusion and epitaxial depositionTOKYO SHIBAURA ELECTRIC CO·Filed 1980·Granted Apr 12, 1983·33 cites·1 claims
- 1065US4532004AMethod of manufacturing a semiconductor deviceTOSHIBA KK·Filed 1984·Granted Jul 30, 1985·26 cites·6 claims
- 1165US4351894AMethod of manufacturing a semiconductor device using silicon carbide maskTOKYO SHIBAURA ELECTRIC CO·Filed 1981·Granted Sep 28, 1982·24 cites·14 claims
- 1256US4240096AFluorine-doped P type siliconTOKYO SHIBAURA ELECTRIC CO·Filed 1978·Granted Dec 16, 1980·14 cites·4 claims
- 1355US5554872ASemiconductor device and method of increasing device breakdown voltage of semiconductor deviceTOSHIBA KK·Filed 1995·Granted Sep 10, 1996·20 cites·19 claims
- 1455US4542400ASemiconductor device with multi-layered structureTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted Sep 17, 1985·19 cites·12 claims
- 1549US4647472AProcess of producing a semiconductor deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1985·Granted Mar 3, 1987·18 cites·8 claims
- 1639US4560642AMethod of manufacturing a semiconductor deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1984·Granted Dec 24, 1985·8 cites·3 claims
- 1738US4200969ASemiconductor device with multi-layered metalizationsTOKYO SHIBAURA ELECTRIC CO·Filed 1977·Granted May 6, 1980·6 cites·12 claims
- 1837US4451303ADiffusion of aluminumTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted May 29, 1984·9 cites·6 claims
- 1936US4521256AMethod of making integrated devices having long and short minority carrier lifetimesTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted Jun 4, 1985·7 cites·7 claims
- 2033US4155802AMethod of producing semiconductor device involving the use of silicon nitride as an oxidation maskTOKYO SHIBAURA ELECTRIC CO·Filed 1976·Granted May 22, 1979·4 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →