Inventor · disambiguated record
Jun Sumino
Also filed as: SUMINO JUN
41 granted patents·8 pending applications·217 citations·filing 1998–2021
97Inventor score
Files withSONY CORP15RENESAS TECH CORP11MICRON TECHNOLOGY INC8SUMINO JUN4SONY SEMICONDUCTOR SOLUTIONS CORP3
Top patents by PatentIndex Score
49 records- 0198US9070441B2Non-volatile memory system with reset verification mechanism and method of operation thereofSONY CORP·Filed 2012·Granted Jun 30, 2015·40 cites·20 claims
- 0289US9349450B2Memory devices and memory operational methods including single erase operation of conductive bridge memory cellsMICRON TECHNOLOGY INC·Filed 2013·Granted May 24, 2016·8 cites·20 claims
- 0385US9911489B2Memory cells, memory systems, and memory programming methodsMICRON TECHNOLOGY INC·Filed 2016·Granted Mar 6, 2018·5 cites·34 claims
- 0485US8835895B2Memory device and fabrication process thereofSONY CORP·Filed 2013·Granted Sep 16, 2014·8 cites·2 claims
- 0585US8476614B2Memory device and fabrication process thereofSUMINO JUN·Filed 2010·Granted Jul 2, 2013·9 cites·6 claims
- 0685US6849919B2Method of fabricating a semiconductor device with a trench isolation structure and resulting semiconductor deviceRENESAS TECH CORP·Filed 2002·Granted Feb 1, 2005·29 cites·4 claims
- 0784US7858490B2Semiconductor device having dual-STI and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2008·Granted Dec 28, 2010·12 cites·4 claims
- 0884US6906378B2Non-volatile semiconductor memory device and method of fabricating the sameRENESAS TECH CORP·Filed 2003·Granted Jun 14, 2005·21 cites·4 claims
- 0982US9515125B2Socket structure for three-dimensional memorySONY CORP·Filed 2015·Granted Dec 6, 2016·3 cites·16 claims
- 1082US8294236B2Semiconductor device having dual-STI and manufacturing method thereofMITSUHIRA NORIYUKI·Filed 2010·Granted Oct 23, 2012·9 cites·5 claims
- 1180US10395731B2Memory cells, memory systems, and memory programming methodsMICRON TECHNOLOGY INC·Filed 2017·Granted Aug 27, 2019·3 cites·37 claims
- 1279US9293196B2Memory cells, memory systems, and memory programming methodsMICRON TECHNOLOGY INC·Filed 2013·Granted Mar 22, 2016·5 cites·38 claims
- 1379US8853663B2Nonvolatile memory device and manufacturing method thereofSUMINO JUN·Filed 2011·Granted Oct 7, 2014·7 cites·14 claims
- 1478US7268056B2Method of fabricating a semiconductor device with a trench isolation structure and resulting semiconductor deviceRENESAS TECH CORP·Filed 2005·Granted Sep 11, 2007·6 cites·4 claims
- 1576US7115940B2Semiconductor deviceRENESAS TECH CORP·Filed 2003·Granted Oct 3, 2006·17 cites·9 claims
- 1673US9007837B2Non-volatile memory system with reset control mechanism and method of operation thereofSONY CORP·Filed 2013·Granted Apr 14, 2015·4 cites·10 claims
- 1773US7355242B2Semiconductor deviceRENESAS TECH CORP·Filed 2006·Granted Apr 8, 2008·4 cites·2 claims
- 1872US10438661B2Memory devices and methods of writing memory cells at different moments in timeMICRON TECHNOLOGY INC·Filed 2016·Granted Oct 8, 2019·2 cites·14 claims
- 1969US10783961B2Memory cells, memory systems, and memory programming methodsMICRON TECHNOLOGY INC·Filed 2019·Granted Sep 22, 2020·1 cites·14 claims
- 2069US9646690B2Non-volatile memory system with reset verification mechanism and method of operation thereofSONY CORP·Filed 2015·Granted May 9, 2017·2 cites·8 claims
- 2169US8242552B2Storage element, method of manufacturing same, and semiconductor storage deviceSUMINO JUN·Filed 2010·Granted Aug 14, 2012·2 cites·16 claims
- 2268US10622067B2Memory systems and memory writing methodsMICRON TECHNOLOGY INC·Filed 2018·Granted Apr 14, 2020·1 cites·15 claims
- 2367US9373397B1Page programming sequences and assignment schemes for a memory deviceSONY CORP·Filed 2014·Granted Jun 21, 2016·2 cites·20 claims
- 2466US7326627B2Method of fabricating a semiconductor device with a trench isolation structure and resulting semiconductor deviceRENESAS TECH CORP·Filed 2007·Granted Feb 5, 2008·2 cites·2 claims
- 2564US11295812B2Memory devices and memory operational methodsMICRON TECHNOLOGY INC·Filed 2019·Granted Apr 5, 2022·0 cites·26 claims
- 2662US8519377B2Nonvolatile memory device, nonvolatile memory device group, and manufacturing method thereofSUMINO JUN·Filed 2011·Granted Aug 27, 2013·1 cites·19 claims
- 2762US7694066B2Nonvolatile memory with active and passive wear levelingSONY CORP·Filed 2006·Granted Apr 6, 2010·5 cites·11 claims
- 2857US9935266B2Socket structure for three-dimensional memorySONY CORP·Filed 2017·Granted Apr 3, 2018·0 cites·10 claims
- 2955US9728722B2Socket structure for three-dimensional memorySONY CORP·Filed 2016·Granted Aug 8, 2017·0 cites·4 claims
- 3055US9153317B2Non-volatile memory system with power reduction mechanism and method of operation thereofSONY CORP·Filed 2012·Granted Oct 6, 2015·1 cites·16 claims
- 3154US6414393B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jul 2, 2002·7 cites·5 claims
- 3254US2009017594A1Non-volatile semiconductor memory device and method of fabricating the sameRENESAS TECH CORP·Filed 2008·Application pending·0 cites
- 3354US2024114701A1Nonvolatile memory device and manufacturing method thereofSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2021·Application pending·0 cites
- 3453US8952348B2Nonvolatile memory device, nonvolatile memory device group, and manufacturing method thereofSONY CORP·Filed 2013·Granted Feb 10, 2015·0 cites·15 claims
- 3553US7808031B2Method of fabricating a semiconductor device with a trench isolation structure and resulting semiconductor deviceRENESAS TECH CORP·Filed 2007·Granted Oct 5, 2010·0 cites·5 claims
- 3652USRE46636ENonvolatile memory device, nonvolatile memory device group, and manufacturing method thereofSONY CORP·Filed 2015·Granted Dec 12, 2017·0 cites·22 claims
- 3751US10050085B2Block architecture for vertical memory arraySONY CORP·Filed 2017·Granted Aug 14, 2018·0 cites·8 claims
- 3850US10074425B2Page programming sequences and assignment schemes for a memory deviceSONY CORP·Filed 2017·Granted Sep 11, 2018·0 cites·11 claims
- 3948US2005221559A1Non-volatile semiconductor memory device and method of fabricating the sameRENESAS TECH CORP·Filed 2005·Application pending·0 cites
- 4047US9715928B2Page programming sequences and assignment schemes for a memory deviceSONY CORP·Filed 2016·Granted Jul 25, 2017·0 cites·4 claims
- 4147US9691820B2Block architecture for vertical memory arraySONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2015·Granted Jun 27, 2017·0 cites·17 claims
- 4247US2005139908A1Semiconductor deviceRENESAS TECH CORP·Filed 2005·Application pending·0 cites
- 4342US2009065841A1SILICON OXY-NITRIDE (SiON) LINER, SUCH AS OPTIONALLY FOR NON-VOLATILE MEMORY CELLSSHAPPIR ASSAF·Filed 2007·Application pending·0 cites
- 4441US2006081909A1Semiconductor device and manufacturing method thereforRENESAS TECH CORP·Filed 2005·Application pending·0 cites
- 4540US2006035437A1Semiconductor device having dual-STI and manufacturing method thereofMITSUHIRA NORIYUKI·Filed 2005·Application pending·0 cites
- 4638US2006270186A1Semiconductor device having plural bird's beaks of different sizes and manufacturing method thereofTSUNOMURA TAKAAKI·Filed 2005·Application pending·0 cites
- 4735US8687404B2Memory element and drive method for the same, and memory deviceSHIMUTA MASAYUKI·Filed 2011·Granted Apr 1, 2014·0 cites·10 claims
- 4828US11683942B2Memory device including a memory element between wiring layers and method of manufacturing memory deviceSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2018·Granted Jun 20, 2023·0 cites·10 claims
- 4927US6153493AMethod of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Nov 28, 2000·1 cites·10 claims
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