Inventor · disambiguated record
Tien Sheng Lin
Also filed as: LIN TIEN SHENG
3 granted patents·1 citations·filing 2018–2021
50Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD3
Top patents by PatentIndex Score
3 records- 0171US10879236B2Bootstrap metal-oxide-semiconductor (MOS) device integrated with a high voltage MOS (HVMOS) device and a high voltage junction termination (HVJT) deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·1 cites·20 claims
- 0254US10679987B2Bootstrap metal-oxide-semiconductor (MOS) device integrated with a high voltage MOS (HVMOS) device and a high voltage junction termination (HVJT) deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 9, 2020·0 cites·20 claims
- 0353US11688804B2Semiconductor device with ring-shaped doped region and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 27, 2023·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →