Inventor · disambiguated record
Soon-Moon Jung
Also filed as: JUNG SOON-MOON
66 granted patents·13 pending applications·999 citations·filing 1996–2011
99Inventor score
Top patents by PatentIndex Score
79 records- 0198US7589375B2Non-volatile memory devices including etching protection layers and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 15, 2009·271 cites·21 claims
- 0295US7683404B2Stacked memory and method for forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 23, 2010·32 cites·20 claims
- 0395US7479673B2Semiconductor integrated circuits with stacked node contact structuresSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 20, 2009·30 cites·37 claims
- 0494US7701771B2Memory device including 3-dimensionally arranged memory cell transistors and methods of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 20, 2010·33 cites·16 claims
- 0593US7646664B2Semiconductor device with three-dimensional array structureSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 12, 2010·35 cites·24 claims
- 0693US7315466B2Semiconductor memory device and method for arranging and manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 1, 2008·27 cites·14 claims
- 0792US7511297B2Phase change memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 31, 2009·17 cites·26 claims
- 0891US7825472B2Semiconductor device having a plurality of stacked transistors and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Nov 2, 2010·21 cites·9 claims
- 0991US7602028B2NAND flash memory devices having 3-dimensionally arranged memory cells and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 13, 2009·23 cites·18 claims
- 1091US6376368B1Method of forming contact structure in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Apr 23, 2002·63 cites·22 claims
- 1190US7982221B2Semiconductor memory device having three dimensional structureSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jul 19, 2011·15 cites·11 claims
- 1290US7719033B2Semiconductor devices having thin film transistors and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 18, 2010·20 cites·15 claims
- 1390US7626228B2NAND-type non-volatile memory devices having a stacked structureSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 1, 2009·18 cites·5 claims
- 1490US6806180B2Unitary interconnection structures integral with a dielectric layerSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Oct 19, 2004·52 cites·26 claims
- 1589US7521715B2Node contact structures in semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 21, 2009·19 cites·48 claims
- 1688US8248853B2Methods of programming non-volatile flash memory devices by applying a higher voltage level to a selected word line than to a word line neighboring the selected word lineLEE JAE DUK·Filed 2009·Granted Aug 21, 2012·22 cites·19 claims
- 1788US7387919B2Methods of fabricating a semiconductor device having a node contact structure of a CMOS inverterSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 17, 2008·18 cites·12 claims
- 1888US6335279B2Method of forming contact holes of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jan 1, 2002·53 cites·18 claims
- 1984US8004885B2Three-dimensional memory device and driving method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Aug 23, 2011·15 cites·20 claims
- 2082US7589992B2Semiconductor device having three dimensional structureSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 15, 2009·7 cites·43 claims
- 2181US7417286B2Semiconductor integrated circuit devices having single crystalline thin film transistors and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 26, 2008·9 cites·11 claims
- 2281US7276421B2Method of forming single crystal semiconductor thin film on insulator and semiconductor device fabricated therebySAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 2, 2007·9 cites·7 claims
- 2380US8026504B2Semiconductor device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 27, 2011·7 cites·14 claims
- 2480US7312144B2Unitary interconnection structures integral with a dielectric layer and fabrication methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Dec 25, 2007·24 cites·21 claims
- 2578US7586135B2Multilevel integrated circuit devices and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 8, 2009·7 cites·21 claims
- 2678US7432560B2Body-tied-to-source MOSFETs with asymmetrical source and drain regions and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 7, 2008·8 cites·11 claims
- 2777US8343812B2Contact structures in substrate having bonded interface, semiconductor device including the same, methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2011·Granted Jan 1, 2013·4 cites·9 claims
- 2877US8168530B2Methods of forming one transistor DRAM devicesJEONG JAE-HUN·Filed 2010·Granted May 1, 2012·4 cites·7 claims
- 2976US8040733B2Non-volatile memory device and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 18, 2011·9 cites·18 claims
- 3076US7795651B2One transistor DRAM device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 14, 2010·5 cites·10 claims
- 3176US7247528B2Methods of fabricating semiconductor integrated circuits using selective epitaxial growth and partial planarization techniquesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 24, 2007·4 cites·33 claims
- 3274US7312110B2Methods of fabricating semiconductor devices having thin film transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 25, 2007·6 cites·50 claims
- 3371US7592625B2Semiconductor transistor with multi-level transistor structure and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 22, 2009·3 cites·13 claims
- 3470US8034668B2Method for forming semiconductor device having metallization comprising select lines, bit lines and word linesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 11, 2011·3 cites·14 claims
- 3568US7554140B2Nand-type non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 30, 2009·3 cites·15 claims
- 3667US7978561B2Semiconductor memory devices having vertically-stacked transistors thereinSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jul 12, 2011·3 cites·14 claims
- 3767US7910433B2Methods of fabricating multi-layer nonvolatile memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Mar 22, 2011·2 cites·18 claims
- 3867US6870231B2Layouts for CMOS SRAM cells and devicesSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Mar 22, 2005·11 cites·40 claims
- 3967US5852572ASmall-sized static random access memory cellSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Dec 22, 1998·26 cites·21 claims
- 4066US8324045B2Method of forming semiconductor device having common node that contacts plural stacked active elements and that has resistive memory elements corresponding to the active elementsPARK JUN-BEOM·Filed 2011·Granted Dec 4, 2012·2 cites·13 claims
- 4166US7960844B23-dimensional flash memory device, method of fabrication and method of operationSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jun 14, 2011·6 cites·20 claims
- 4265US7671389B2SRAM devices having buried layer patternsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 2, 2010·0 cites·9 claims
- 4363US7151031B2Methods of fabricating semiconductor devices having gate insulating layers with differing thicknessesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Dec 19, 2006·7 cites·11 claims
- 4461US8183634B2Stack-type semiconductor devicePARK JUN-BEOM·Filed 2009·Granted May 22, 2012·3 cites·13 claims
- 4560US7927932B2Semiconductor device having a plurality of stacked transistors and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Apr 19, 2011·1 cites·12 claims
- 4659US8258563B2Multi-layer memory devicesJANG YOUNG-CHUL·Filed 2011·Granted Sep 4, 2012·1 cites·9 claims
- 4759US8048727B2Methods of forming SRAM devices having buried layer patternsSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Nov 1, 2011·0 cites·16 claims
- 4859US7193276B2Semiconductor devices with a source/drain regions formed on a recessed portion of an isolation layerSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 20, 2007·5 cites·23 claims
- 4958US7601998B2Semiconductor memory device having metallization comprising select lines, bit lines and word linesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 13, 2009·1 cites·10 claims
- 5056US8227919B2Interconnection structure and electronic device employing the samePARK HAN-BYUNG·Filed 2009·Granted Jul 24, 2012·1 cites·17 claims
Showing the top 50 of 79 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →