Inventor · disambiguated record
Hubert Moriceau
Also filed as: MORICEAU HUBERT
83 granted patents·10 pending applications·1,435 citations·filing 1980–2018
99Inventor score
Files withCOMMISSARIAT ENERGIE ATOMIQUE60MORICEAU HUBERT7SOITEC SILICON ON INSULATOR7FOURNEL FRANCK3ZUSSY MARC2
Top patents by PatentIndex Score
93 records- 0198US6809044B1Method for making a thin film using pressurizationCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2000·Granted Oct 26, 2004·184 cites·20 claims
- 0298US6756286B1Method for transferring a thin film comprising a step of generating inclusionsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1998·Granted Jun 29, 2004·263 cites·19 claims
- 0395US7883994B2Process for the transfer of a thin filmCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2007·Granted Feb 8, 2011·21 cites·9 claims
- 0493US7232739B2Multifunctional metallic bondingCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2006·Granted Jun 19, 2007·24 cites·23 claims
- 0592US7579259B2Simplified method of producing an epitaxially grown structureCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2006·Granted Aug 25, 2009·21 cites·21 claims
- 0691US7407867B2Method for concurrently producing at least a pair of semiconductor structures that each include at least one useful layer on a substrateSOITEC SILICON ON INSULATOR·Filed 2006·Granted Aug 5, 2008·19 cites·14 claims
- 0791US6991995B2Method of producing a semiconductor structure having at least one support substrate and an ultrathin layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2004·Granted Jan 31, 2006·54 cites·20 claims
- 0891US6974759B2Method for making a stacked comprising a thin film adhering to a target substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2001·Granted Dec 13, 2005·46 cites·26 claims
- 0991US6756285B1Multilayer structure with controlled internal stresses and making sameCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2000·Granted Jun 29, 2004·86 cites·17 claims
- 1090US8609514B2Process for the transfer of a thin film comprising an inclusion creation stepCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Dec 17, 2013·6 cites·14 claims
- 1190US7713369B2Detachable substrate or detachable structure and method for the production thereofCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2002·Granted May 11, 2010·48 cites·18 claims
- 1290US6204079B1Selective transfer of elements from one support to another supportCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1999·Granted Mar 20, 2001·120 cites·23 claims
- 1389US6403450B1Heat treatment method for semiconductor substratesCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1999·Granted Jun 11, 2002·101 cites·21 claims
- 1488US7902038B2Detachable substrate with controlled mechanical strength and method of producing sameCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2002·Granted Mar 8, 2011·50 cites·19 claims
- 1587US7268060B2Method for fabricating a substrate with useful layer on high resistivity supportSOITEC SILICON ON INSULATOR·Filed 2004·Granted Sep 11, 2007·37 cites·14 claims
- 1687US7229899B2Process for the transfer of a thin filmCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2003·Granted Jun 12, 2007·25 cites·26 claims
- 1787US6821376B1Method for separating two elements and a device thereforCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2000·Granted Nov 23, 2004·50 cites·42 claims
- 1886US8679946B2Manufacturing process for a stacked structure comprising a thin layer bonding to a target substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Mar 25, 2014·5 cites·28 claims
- 1984US8628674B2Method for trimming a structure obtained by the assembly of two platesSOITEC SILICON ON INSULATOR·Filed 2012·Granted Jan 14, 2014·6 cites·9 claims
- 2084US8470712B2Process for the transfer of a thin film comprising an inclusion creation stepMORICEAU HUBERT·Filed 2010·Granted Jun 25, 2013·4 cites·24 claims
- 2184US7781300B2Method for producing mixed stacked structures, different insulating areas and/or localised vertical electrical conducting areasCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2005·Granted Aug 24, 2010·14 cites·74 claims
- 2284US6724017B2Method for automatic organization of microstructures or nanostructures and related device obtainedCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2001·Granted Apr 20, 2004·25 cites·26 claims
- 2383US7494897B2Method of producing mixed substrates and structure thus obtainedCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2003·Granted Feb 24, 2009·29 cites·31 claims
- 2481US7541263B2Method for providing mixed stacked structures, with various insulating zones and/or electrically conducting zones vertically localizedCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2005·Granted Jun 2, 2009·8 cites·57 claims
- 2579US8481409B2Manufacturing process for a stacked structure comprising a thin layer bonding to a target substrateMORICEAU HUBERT·Filed 2005·Granted Jul 9, 2013·5 cites·15 claims
- 2679US8318586B2Nitrogen-plasma surface treatment in a direct bonding methodLIBRALESSO LAURE·Filed 2009·Granted Nov 27, 2012·17 cites·17 claims
- 2778US8329048B2Method for trimming a structure obtained by the assembly of two platesZUSSY MARC·Filed 2005·Granted Dec 11, 2012·9 cites·8 claims
- 2878US8288250B2Method for transferring chips onto a substrateCLAVELIER LAURENT·Filed 2009·Granted Oct 16, 2012·11 cites·20 claims
- 2977US9922954B2Method for performing direct bonding between two structuresCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Mar 20, 2018·2 cites·16 claims
- 3077US8530331B2Process for assembling substrates with low-temperature heat treatmentsBENEYTON REMI·Filed 2011·Granted Sep 10, 2013·3 cites·31 claims
- 3175US9427948B2Manufacturing a flexible structure by transfers of layersCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2012·Granted Aug 30, 2016·4 cites·14 claims
- 3272US7645392B2Methods for preparing a bonding surface of a semiconductor waferSOITEC SILICON ON INSULATOR·Filed 2006·Granted Jan 12, 2010·5 cites·20 claims
- 3371US9209068B2Method for the treatment and direct bonding of a material layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2012·Granted Dec 8, 2015·3 cites·13 claims
- 3468US9899217B2Method for producing a strained semiconductor on insulator substrateCOMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENE ALT·Filed 2014·Granted Feb 20, 2018·2 cites·22 claims
- 3567US9219004B2Method of fabricating polymer film in the cavity of a waferMORICEAU HUBERT·Filed 2011·Granted Dec 22, 2015·2 cites·16 claims
- 3666US10497609B2Method for direct bonding of substrates including thinning of the edges of at least one of the two substratesCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Dec 3, 2019·1 cites·10 claims
- 3765US8302278B2Method and device for separating a structureZUSSY MARC·Filed 2008·Granted Nov 6, 2012·2 cites·31 claims
- 3864US7947564B2Method of fabricating a mixed microtechnology structure and a structure obtained therebyCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2007·Granted May 24, 2011·3 cites·28 claims
- 3964US7115481B2Method for concurrently producing at least a pair of semiconductor structures that each include at least one useful layer on a substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2003·Granted Oct 3, 2006·10 cites·21 claims
- 4063US8871607B2Method for producing hybrid componentsSIGNAMARCHEIX THOMAS·Filed 2008·Granted Oct 28, 2014·3 cites·27 claims
- 4162US8034208B2Deformation moderation methodCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2008·Granted Oct 11, 2011·4 cites·14 claims
- 4261US7776716B2Method for fabricating a semiconductor on insulator waferSOITEC SILICON ON INSULATOR·Filed 2007·Granted Aug 17, 2010·2 cites·28 claims
- 4361US7041227B2Method for revealing crystalline defects and/or stress field defects at the molecular adhesion interface of two solid materialsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2001·Granted May 9, 2006·8 cites·11 claims
- 4460US8207048B2Method for producing ordered nanostructuresFOURNEL FRANCK·Filed 2006·Granted Jun 26, 2012·2 cites·16 claims
- 4560US7586154B2Method for fabricating a substrate with useful layer on high resistivity supportSOITEC SILICON ON INSULATOR·Filed 2007·Granted Sep 8, 2009·1 cites·6 claims
- 4660US7550052B2Method of producing a complex structure by assembling stressed structuresCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2003·Granted Jun 23, 2009·8 cites·36 claims
- 4760US7258743B2Composite structure with a uniform crystal orientation and the method of controlling the crystal orientation of one such structureCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2002·Granted Aug 21, 2007·9 cites·11 claims
- 4859US7189632B2Multifunctional metallic bondingCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2003·Granted Mar 13, 2007·7 cites·23 claims
- 4959US6808967B1Method for producing a buried layer of material in another materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1999·Granted Oct 26, 2004·23 cites·20 claims
- 5058US7264996B2Method for separating wafers bonded together to form a stacked structureCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2004·Granted Sep 4, 2007·7 cites·11 claims
Showing the top 50 of 93 patent records by PatentIndex Score.
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