Inventor · disambiguated record
Carl M. Faulkner
Also filed as: FAULKNER CARL · FAULKNER CARL M
6 granted patents·289 citations·filing 2004–2011
86Inventor score
Top patents by PatentIndex Score
6 records- 0197US6891234B1Transistor with workfunction-induced charge layerACORN TECH INC·Filed 2004·Granted May 10, 2005·199 cites·41 claims
- 0293US8263467B2Process for fabricating a self-aligned deposited source/drain insulated gate field-effect transistorGRUPP DANIEL E·Filed 2011·Granted Sep 11, 2012·18 cites·37 claims
- 0389US8658523B2Method for making semiconductor insulated-gate field-effect transistor having multilayer deposited metal source(s) and/or drain(s)FAULKNER CARL M·Filed 2010·Granted Feb 25, 2014·16 cites·4 claims
- 0488US7816240B2Method for making semiconductor insulated-gate field-effect transistor having multilayer deposited metal source(s) and/or drain(s)ACORN TECH INC·Filed 2007·Granted Oct 19, 2010·14 cites·2 claims
- 0583US7902029B2Process for fabricating a self-aligned deposited source/drain insulated gate field-effect transistorACORN TECH INC·Filed 2005·Granted Mar 8, 2011·10 cites·20 claims
- 0683US7382021B2Insulated gate field-effect transistor having III-VI source/drain layer(s)ACORN TECH INC·Filed 2004·Granted Jun 3, 2008·32 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →