Inventor · disambiguated record
John Torvik
Also filed as: TORVIK JOHN T · TORVIK JOHN TARJE
9 granted patents·1 pending application·92 citations·filing 2002–2005
88Inventor score
Top patents by PatentIndex Score
10 records- 0180US6870204B2Heterojunction bipolar transistor containing at least one silicon carbide layerASTRALUX INC·Filed 2002·Granted Mar 22, 2005·23 cites·44 claims
- 0276US6632694B2Double heterojunction light emitting diodes and laser diodes having quantum dot silicon light emittersASTRALUX INC·Filed 2002·Granted Oct 14, 2003·32 cites·14 claims
- 0364US6764907B2Method of fabricating self-aligned silicon carbide semiconductor devicesFiled 2003·Granted Jul 20, 2004·10 cites·28 claims
- 0455US7241699B2Wide bandgap semiconductor device constructionMICROSEMI CORP·Filed 2003·Granted Jul 10, 2007·6 cites·29 claims
- 0554US6699770B2Method of making a hybride substrate having a thin silicon carbide membrane layerFiled 2002·Granted Mar 2, 2004·6 cites·63 claims
- 0652US7508000B2Method of fabricating self-aligned silicon carbide semiconductor devicesMICROSEMI CORP·Filed 2004·Granted Mar 24, 2009·4 cites·25 claims
- 0750US6927422B2Double heterojunction light emitting diodes and laser diodes having quantum dot silicon light emittersASTRALUX INC·Filed 2003·Granted Aug 9, 2005·4 cites·32 claims
- 0849US6982440B2Silicon carbide semiconductor devices with a regrown contact layerPOWERSICEL INC·Filed 2003·Granted Jan 3, 2006·5 cites·37 claims
- 0945US6893932B2Heterojunction bipolar transistor containing at least one silicon carbide layerASTRALUX INC·Filed 2004·Granted May 17, 2005·2 cites·29 claims
- 1043US2005224808A1Silicon carbide semiconductor devices with a regrown contact layerVAN ZEGHBROECK BART J·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →