Inventor · disambiguated record
Shinya Soeda
Also filed as: SOEDA SHINYA
12 granted patents·1 pending application·218 citations·filing 1992–2003
92Inventor score
Top patents by PatentIndex Score
13 records- 0195US6323560B1Registration accuracy measurement mark, method of repairing defect of the mark, photomask having the mark, method of manufacturing the photo mask and method of exposure thereofMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Nov 27, 2001·63 cites·3 claims
- 0279US6218235B1Method of manufacturing a DRAM and logic deviceMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Apr 17, 2001·31 cites·19 claims
- 0374US6355387B1Method of making a mask patternMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Mar 12, 2002·38 cites·19 claims
- 0473US6388295B1Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2000·Granted May 14, 2002·21 cites·20 claims
- 0563US6822279B2Semiconductor device and method of fabricating the sameRENESAS TECH CORP·Filed 2002·Granted Nov 23, 2004·11 cites·18 claims
- 0663US6680539B2Semiconductor device, semiconductor device pattern designing method, and semiconductor device pattern designing apparatusRENESAS TECH CORP·Filed 2000·Granted Jan 20, 2004·13 cites·3 claims
- 0759US5892291ARegistration accuracy measurement markMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Apr 6, 1999·15 cites·12 claims
- 0858US6670680B2Semiconductor device comprising a dual gate CMOSRENESAS TECH CORP·Filed 2001·Granted Dec 30, 2003·8 cites·3 claims
- 0949US6331462B1Manufacturing method of a semiconductor device for desired circuit patternsMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Dec 18, 2001·10 cites·13 claims
- 1039US6068952ARegistration accuracy measurement mark, method of repairing defect of the mark, photomask having the mark, method of manufacturing the photomask and method of exposure thereofMITSUBISHI ELECTRIC CORP·Filed 1999·Granted May 30, 2000·4 cites·4 claims
- 1135US2004108553A1Semiconductor device and process for sameRENESAS TECH CORP·Filed 2003·Application pending·0 cites
- 1233US6607964B2Method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Aug 19, 2003·0 cites·3 claims
- 1331US5329146ADRAM having trench type capacitor extending through field oxideMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jul 12, 1994·4 cites·4 claims
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