Inventor · disambiguated record
Soo Seong Kim
Also filed as: KIM SOO-SEONG
7 granted patents·10 pending applications·39 citations·filing 1996–2023
80Inventor score
Files withTRINNO TECH CO LTD6SAMSUNG ELECTRONICS CO LTD3KIM SOO SEONG2OH KWANG-HOON2FAIRCHILD KR SEMICONDUCTOR LTD1
Top patents by PatentIndex Score
17 records- 0166US5893736AMethods of forming insulated gate semiconductor devices having spaced epitaxial JFET regions thereinSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Apr 13, 1999·27 cites·11 claims
- 0255US8269304B2MOS gate power semiconductor device with anode of protection diode connected to collector electrodeOH KWANG-HOON·Filed 2010·Granted Sep 18, 2012·2 cites·10 claims
- 0353US12501636B2Power semiconductor device capable of controlling slope of current and voltage during dynamic switchingTRINNO TECH CO LTD·Filed 2022·Granted Dec 16, 2025·0 cites·10 claims
- 0448US2025203982A1Power semiconductor device having withstand voltage region of vld structure, and method for manufacturing sameTRINNO TECH CO LTD·Filed 2023·Application pending·0 cites
- 0547US2024234508A9Silicon carbide power semiconductor device having uniform channel length and manufacturing method thereofTRINNO TECH CO LTD·Filed 2023·Application pending·0 cites
- 0647US2025318275A1Silicon carbide power semiconductor device having folded channel area, and manufacturing method thereforTRINNO TECH CO LTD·Filed 2023·Application pending·0 cites
- 0746US12087848B2Power semiconductor device with reduced loss and manufacturing method the sameTRINNO TECH CO LTD·Filed 2022·Granted Sep 10, 2024·0 cites·7 claims
- 0846US2023411511A1Power semiconductor device with dual shield structure in silicon carbide and manufacturing method thereofTRINNO TECH CO LTD·Filed 2023·Application pending·0 cites
- 0943US2016020155A1Light source testing apparatus, testing method of lighting source and manufacturing method of light-emitting device package, light emitting module, and illumination apparatus using the sameKIM SOO SEONG·Filed 2014·Application pending·0 cites
- 1041US6448588B2Insulated gate bipolar transistor having high breakdown voltage in reverse blocking modeFAIRCHILD KR SEMICONDUCTOR LTD·Filed 2001·Granted Sep 10, 2002·2 cites·5 claims
- 1138US6114212AMethods of fabricating bipolar junction transistors having an increased safe operating areaSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Sep 5, 2000·6 cites·20 claims
- 1234US2011259941A1Apparatus for monitoring bonding surface bouncing, wire bonding apparatus having the same and method for monitoring bonding surface bouncingKIM SOO SEONG·Filed 2011·Application pending·0 cites
- 1333US2004256659A1MOS-gated transistor with improved UIS capabilityFiled 2004·Application pending·0 cites
- 1433US2011169080A1Charge balance power device and manufacturing method thereofYUN CHONG-MAN·Filed 2010·Application pending·0 cites
- 1531US2003057478A1Mos-gated power semiconductor deviceFiled 2002·Application pending·0 cites
- 1630US5872391ABipolar junction transistors having an increased safe operating areaSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Feb 16, 1999·2 cites·8 claims
- 1727US2011049563A1Mos gate power semiconductor deviceOH KWANG-HOON·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →