Inventor · disambiguated record
Carl Radens
Also filed as: RADENS CARL · RADENS CARL J · RADENS CARL JOHN
412 granted patents·46 pending applications·8,021 citations·filing 1993–2024
99Inventor score
Files withIBM356ST MICROELECTRONICS INC17GLOBALFOUNDRIES INC16CLEVENGER LAWRENCE A10INFINEON TECHNOLOGIES CORP9
Top patents by PatentIndex Score
458 records- 0199US6556477B2Integrated chip having SRAM, DRAM and flash memory and method for fabricating the sameIBM·Filed 2001·Granted Apr 29, 2003·232 cites·13 claims
- 0298US11107731B1Self-aligned repaired top viaIBM·Filed 2020·Granted Aug 31, 2021·5 cites·20 claims
- 0398US10832916B1Self-aligned gate isolation with asymmetric cut placementIBM·Filed 2019·Granted Nov 10, 2020·42 cites·25 claims
- 0498US10516064B1Multiple width nanosheet devicesIBM·Filed 2018·Granted Dec 24, 2019·21 cites·20 claims
- 0598US9530863B1Methods of forming vertical transistor devices with self-aligned replacement gate structuresGLOBALFOUNDRIES INC·Filed 2016·Granted Dec 27, 2016·68 cites·19 claims
- 0698US9530866B1Methods of forming vertical transistor devices with self-aligned top source/drain conductive contactsGLOBALFOUNDRIES INC·Filed 2016·Granted Dec 27, 2016·128 cites·16 claims
- 0798US6632741B1Self-trimming method on looped patternsIBM·Filed 2000·Granted Oct 14, 2003·341 cites·29 claims
- 0898US6566177B1Silicon-on-insulator vertical array device trench capacitor DRAMIBM·Filed 1999·Granted May 20, 2003·279 cites·9 claims
- 0998US6440872B1Method for hybrid DRAM cell utilizing confined strap isolationIBM·Filed 2000·Granted Aug 27, 2002·166 cites·15 claims
- 1097US10431495B1Semiconductor device with local connectionIBM·Filed 2018·Granted Oct 1, 2019·18 cites·20 claims
- 1197US9607893B1Method of forming self-aligned metal lines and viasGLOBALFOUNDRIES INC·Filed 2016·Granted Mar 28, 2017·22 cites·20 claims
- 1297US9472558B1Semiconductor structures with stacked non-planar field effect transistors and methods of forming the structuresGLOBALFOUNDRIES INC·Filed 2015·Granted Oct 18, 2016·17 cites·20 claims
- 1397US8373239B2Structure and method for replacement gate MOSFET with self-aligned contact using sacrificial mandrel dielectricIBM·Filed 2010·Granted Feb 12, 2013·31 cites·7 claims
- 1497US7531407B2Semiconductor integrated circuit devices having high-Q wafer backside inductors and methods of fabricating sameIBM·Filed 2006·Granted May 12, 2009·61 cites·11 claims
- 1597US6864540B1High performance FET with elevated source/drain regionIBM·Filed 2004·Granted Mar 8, 2005·130 cites·26 claims
- 1697US6670234B2Method of integrating volatile and non-volatile memory cells on the same substrate and a semiconductor memory device thereofIBM·Filed 2001·Granted Dec 30, 2003·115 cites·19 claims
- 1796US9601570B1Structure for reduced source and drain contact to gate stack capacitanceIBM·Filed 2016·Granted Mar 21, 2017·10 cites·12 claims
- 1896US8236634B1Integration of fin-based devices and ETSOI devicesKANIKE NARASIMHULU·Filed 2011·Granted Aug 7, 2012·35 cites·16 claims
- 1996US7514271B2Method of forming high density planar magnetic domain wall memoryIBM·Filed 2007·Granted Apr 7, 2009·36 cites·10 claims
- 2096US6943409B1Trench optical deviceIBM·Filed 2004·Granted Sep 13, 2005·97 cites·20 claims
- 2196US6541815B1High-density dual-cell flash memory structureIBM·Filed 2001·Granted Apr 1, 2003·117 cites·14 claims
- 2296US6339241B1Structure and process for 6F2 trench capacitor DRAM cell with vertical MOSFET and 3F bitline pitchIBM·Filed 2000·Granted Jan 15, 2002·73 cites·15 claims
- 2395US12419024B2High density static random-access memoryIBM·Filed 2022·Granted Sep 16, 2025·2 cites·17 claims
- 2495US12328859B2Stacked FET SRAMIBM·Filed 2022·Granted Jun 10, 2025·2 cites·20 claims
- 2595US11690305B2Phase change memory cell with an airgap to allow for the expansion and restriction of the PCM materialIBM·Filed 2021·Granted Jun 27, 2023·3 cites·18 claims
- 2695US8421077B2Replacement gate MOSFET with self-aligned diffusion contactJAIN SAMEER H·Filed 2010·Granted Apr 16, 2013·35 cites·20 claims
- 2795US7657995B2Method of fabricating a microelectromechanical system (MEMS) switchIBM·Filed 2007·Granted Feb 9, 2010·29 cites·4 claims
- 2895US7394332B2Micro-cavity MEMS device and method of fabricating sameIBM·Filed 2005·Granted Jul 1, 2008·45 cites·18 claims
- 2995US7312529B2Structure and method for producing multiple size interconnectionsIBM·Filed 2005·Granted Dec 25, 2007·36 cites·18 claims
- 3095US7250351B2Enhanced silicon-on-insulator (SOI) transistors and methods of making enhanced SOI transistorsIBM·Filed 2005·Granted Jul 31, 2007·24 cites·19 claims
- 3195US7129130B2Out of the box vertical transistor for eDRAM on SOIIBM·Filed 2005·Granted Oct 31, 2006·25 cites·10 claims
- 3295US6720630B2Structure and method for MOSFET with metallic gate electrodeIBM·Filed 2001·Granted Apr 13, 2004·122 cites·21 claims
- 3395US6630379B2Method of manufacturing 6F2 trench capacitor DRAM cell having vertical MOSFET and 3F bitline pitchIBM·Filed 2001·Granted Oct 7, 2003·62 cites·20 claims
- 3495US6251710B1Method of making a dual damascene anti-fuse with via before wireIBM·Filed 2000·Granted Jun 26, 2001·85 cites·21 claims
- 3595US6190979B1Method for fabricating dual workfunction devices on a semiconductor substrate using counter-doping and gapfillIBM·Filed 1999·Granted Feb 20, 2001·186 cites·22 claims
- 3694US10546936B2Structure for reduced source and drain contact to gate stack capacitanceIBM·Filed 2019·Granted Jan 28, 2020·6 cites·13 claims
- 3794US10395984B2Self-aligned via interconnect structuresIBM·Filed 2016·Granted Aug 27, 2019·22 cites·20 claims
- 3894US9911652B1Forming self-aligned vias and air-gaps in semiconductor fabricationIBM·Filed 2017·Granted Mar 6, 2018·7 cites·20 claims
- 3994US9030295B2RFID tag with environmental sensorIBM·Filed 2013·Granted May 12, 2015·24 cites·17 claims
- 4094US7459743B2Dual port gain cell with side and top gated read transistorIBM·Filed 2005·Granted Dec 2, 2008·27 cites·20 claims
- 4194US6573137B1Single sided buried strapINFINEON TECHNOLOGIES CORP·Filed 2000·Granted Jun 3, 2003·58 cites·12 claims
- 4294US6429068B1Structure and method of fabricating embedded vertical DRAM arrays with silicided bitline and polysilicon interconnectIBM·Filed 2001·Granted Aug 6, 2002·62 cites·20 claims
- 4393US12317762B2Vertical phase change memory deviceIBM·Filed 2022·Granted May 27, 2025·1 cites·17 claims
- 4493US9337087B1Multilayer structure in an integrated circuit for damage prevention and detection and methods of creating the sameST MICROELECTRONICS INC·Filed 2014·Granted May 10, 2016·13 cites·16 claims
- 4593US8859350B2Recessed gate field effect transistorST MICROELECTRONICS INC·Filed 2014·Granted Oct 14, 2014·13 cites·19 claims
- 4693US8829670B1Through silicon via structure for internal chip coolingST MICROELECTRONICS INC·Filed 2013·Granted Sep 9, 2014·17 cites·18 claims
- 4793US7772649B2SOI field effect transistor with a back gate for modulating a floating bodyIBM·Filed 2008·Granted Aug 10, 2010·25 cites·14 claims
- 4893US6780694B2MOS transistorIBM·Filed 2003·Granted Aug 24, 2004·67 cites·20 claims
- 4993US6720595B2Three-dimensional island pixel photo-sensorIBM·Filed 2001·Granted Apr 13, 2004·59 cites·19 claims
- 5093US6426526B1Single sided buried strapIBM·Filed 2001·Granted Jul 30, 2002·53 cites·6 claims
Showing the top 50 of 458 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →