Inventor · disambiguated record
Matthew T. Hardy
Also filed as: HARDY MATTHEW T
3 granted patents·5 pending applications·8 citations·filing 2010–2020
61Inventor score
Top patents by PatentIndex Score
8 records- 0180US11831295B2Multifunctional integrated acoustic devices and systems using epitaxial materialsUS GOV SEC NAVY·Filed 2020·Granted Nov 28, 2023·2 cites·13 claims
- 0279US10283597B2Scandium-containing III-N etch-stop layers for selective etching of III-nitrides and related materialsUS NAVY·Filed 2017·Granted May 7, 2019·3 cites·10 claims
- 0369US8772758B2Suppression of inclined defect formation and increase in critical thickness by silicon doping on non-c-plane (Al,Ga,In)NHARDY MATTHEW T·Filed 2012·Granted Jul 8, 2014·3 cites·32 claims
- 0441US2011103418A1Superluminescent diodes by crystallographic etchingUNIV CALIFORNIA·Filed 2010·Application pending·0 cites
- 0540US2013099202A1SUPPRESSION OF RELAXATION BY LIMITED AREA EPITAXY ON NON-C-PLANE (In,Al,B,Ga)NUNIV CALIFORNIA·Filed 2012·Application pending·0 cites
- 0640US2011007766A1STRUCTURE FOR IMPROVING THE MIRROR FACET CLEAVING YIELD OF (Ga,Al,In,B)N LASER DIODES GROWN ON NONPOLAR OR SEMIPOLAR (Ga,Al,In,B)N SUBSTRATESUNIV CALIFORNIA·Filed 2010·Application pending·0 cites
- 0739US2013100978A1Hole blocking layer for the prevention of hole overflow and non-radiative recombination at defects outside the active regionUNIV CALIFORNIA·Filed 2012·Application pending·0 cites
- 0832US2012104360A1Strain compensated short-period superlattices on semipolar or nonpolar gan for defect reduction and stress engineeringHARDY MATTHEW T·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →