Inventor · disambiguated record
Jun Song
Also filed as: SONG JUN · SONG JUN E · SONG JUN-EUI
30 granted patents·2 pending applications·487 citations·filing 1991–2011
97Inventor score
Files withCHARTERED SEMICONDUCTOR MFG19SAMSUNG ELECTRONICS CO LTD11CHARTERED SEMINCONDUCTOR MFG L1KIM SUN YOUNG1
Top patents by PatentIndex Score
32 records- 0189US6611024B2Method of forming PID protection diode for SOI waferCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Aug 26, 2003·44 cites·8 claims
- 0287US6303414B1Method of forming PID protection diode for SOI waferCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Oct 16, 2001·42 cites·11 claims
- 0387US6275089B1Low voltage controllable transient trigger network for ESD protectionCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Aug 14, 2001·45 cites·10 claims
- 0480US6376379B1Method of hard mask patterningCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Apr 23, 2002·25 cites·26 claims
- 0577US6177324B1ESD protection device for STI deep submicron technologyCHARTERED SEMICONDUCTOR MFG·Filed 1999·Granted Jan 23, 2001·42 cites·24 claims
- 0676US6787422B2Method of body contact for SOI mosfetCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Sep 7, 2004·20 cites·9 claims
- 0776US6479905B1Full CMOS SRAM cellSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Nov 12, 2002·30 cites·10 claims
- 0876US6458632B1UMOS-like gate-controlled thyristor structure for ESD protectionCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Oct 1, 2002·23 cites·10 claims
- 0974US7608500B2Method of forming semiconductor device includeing forming control gate layer over each region and removing a portion of the tunnel insulating layer on the low voltage regionSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 27, 2009·7 cites·23 claims
- 1073US6582856B1Simplified method of fabricating a rim phase shift maskCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Jun 24, 2003·13 cites·19 claims
- 1170US6376319B2Process to fabricate a source-drain extensionCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Apr 23, 2002·13 cites·9 claims
- 1269US6963113B2Method of body contact for SOI MOSFETCHARTERED SEMICONDUCTOR MFG·Filed 2004·Granted Nov 8, 2005·13 cites·14 claims
- 1369US6555878B2Umos-like gate-controlled thyristor structure for ESD protectionCHARTERED SEMICONDUCTOR MFG·Filed 2002·Granted Apr 29, 2003·15 cites·11 claims
- 1467US5158463AMethod of manufacturing both low and high voltage BiCMOS transistors in the same semiconductor substrateSAMSUNG ELECTRONICS CO LTD·Filed 1991·Granted Oct 27, 1992·25 cites·3 claims
- 1565US7482224B2Methods of fabricating semiconductor integrated circuit devices including SRAM cells and flash memory cellsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 27, 2009·3 cites·19 claims
- 1664US5105252ALow voltage BiCMOS and high voltage BiCMOS the same substrateSAMSUNG ELECTRONICS CO LTD·Filed 1991·Granted Apr 14, 1992·22 cites·3 claims
- 1763US6492242B1Method of forming of high K metallic dielectric layerCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Dec 10, 2002·8 cites·14 claims
- 1860US6764914B2Method of forming a high K metallic dielectric layerCHARTERED SEMICONDUCTOR MFG·Filed 2002·Granted Jul 20, 2004·6 cites·8 claims
- 1960US6319783B1Process to fabricate a novel source-drain extensionCHARTERED SEMICONDUCTOR MFG·Filed 1999·Granted Nov 20, 2001·16 cites·10 claims
- 2057US6835985B2ESD protection structureCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Dec 28, 2004·7 cites·8 claims
- 2157US6445017B2Full CMOS SRAM cellSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Sep 3, 2002·10 cites·10 claims
- 2253US6258677B1Method of fabricating wedge isolation transistorsCHARTERED SEMINCONDUCTOR MFG L·Filed 1999·Granted Jul 10, 2001·22 cites·19 claims
- 2351US6455384B2Method for forming MOSFET device having source/drain extension regions located underlying L shaped spacersCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Sep 24, 2002·4 cites·7 claims
- 2447US6399431B1ESD protection device for SOI technologyCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Jun 4, 2002·3 cites·18 claims
- 2546US5742078AIntegrated circuit SRAM cell layoutsSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Apr 21, 1998·12 cites·19 claims
- 2642USRE36440EIntegrated circuit SRAM cell layoutsSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Dec 14, 1999·6 cites·19 claims
- 2741US6855609B2Method of manufacturing ESD protection structureCHARTERED SEMICONDUCTOR MFG·Filed 2003·Granted Feb 15, 2005·1 cites·8 claims
- 2839US9330966B2Methods of forming semiconductor devicesKIM SUN-YOUNG·Filed 2011·Granted May 3, 2016·0 cites·7 claims
- 2938US6329253B1Thick oxide MOS device used in ESD protection circuitCHARTERED SEMICONDUCTOR MFG·Filed 1999·Granted Dec 11, 2001·9 cites·26 claims
- 3036US6639326B2Full CMOS SRAM cellSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Oct 28, 2003·1 cites·9 claims
- 3134US2004175919A1Borderless contact structure and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Application pending·0 cites
- 3232US2001009805A1Borderless contact structure and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →