Inventor · disambiguated record
Markus Bina
Also filed as: BINA MARKUS
19 granted patents·1 pending application·21 citations·filing 2016–2024
90Inventor score
Top patents by PatentIndex Score
20 records- 0192US10332973B2N-channel bipolar power semiconductor device with p-layer in the drift volumeINFINEON TECHNOLOGIES AG·Filed 2018·Granted Jun 25, 2019·8 cites·20 claims
- 0289US10615272B2Method for producing IGBT with dV/dt controllabilityINFINEON TECHNOLOGIES AG·Filed 2018·Granted Apr 7, 2020·4 cites·15 claims
- 0381US10530360B2Double gate transistor device and method of operatingINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Jan 7, 2020·2 cites·19 claims
- 0480US10304952B2Power semiconductor device with dV/dt controllability and cross-trench arrangementINFINEON TECHNOLOGIES AG·Filed 2018·Granted May 28, 2019·2 cites·31 claims
- 0577US2024275379A1Double gate transistor device and method of operatingINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2024·Application pending·0 cites
- 0676US10276681B2Double gate transistor device and method of operatingINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Apr 30, 2019·2 cites·20 claims
- 0773US10840362B2IGBT with dV/dt controllabilityINFINEON TECHNOLOGIES AG·Filed 2018·Granted Nov 17, 2020·1 cites·16 claims
- 0872US10355116B2Power semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Jul 16, 2019·1 cites·20 claims
- 0968US10644141B2Power semiconductor device with dV/dt controllabilityINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted May 5, 2020·1 cites·23 claims
- 1064US12003231B2Double gate transistor device and method of operatingINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Jun 4, 2024·0 cites·20 claims
- 1162US10923578B2Semiconductor device comprising a barrier regionINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Feb 16, 2021·0 cites·11 claims
- 1261US11075290B2Power semiconductor device having a cross-trench arrangementINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jul 27, 2021·0 cites·18 claims
- 1360US10546939B2N-channel bipolar power semiconductor device with P-layer in the drift volumeINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jan 28, 2020·0 cites·20 claims
- 1459US11250966B2Apparatus and method for neutron transmutation doping of semiconductor wafersINFINEON TECHNOLOGIES AG·Filed 2019·Granted Feb 15, 2022·0 cites·16 claims
- 1559US10978596B2Power diode and method of manufacturing a power diodeINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Apr 13, 2021·0 cites·15 claims
- 1656US10903353B2Double gate transistor device and method of operatingINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Jan 26, 2021·0 cites·12 claims
- 1755US9978851B2n-channel bipolar power semiconductor device with p-layer in the drift volumeINFINEON TECHNOLOGIES AG·Filed 2017·Granted May 22, 2018·0 cites·20 claims
- 1852US10468148B2Apparatus and method for neutron transmutation doping of semiconductor wafersINFINEON TECHNOLOGIES AG·Filed 2017·Granted Nov 5, 2019·0 cites·19 claims
- 1943US10109624B2Semiconductor device comprising transistor cell units with different threshold voltagesINFINEON TECHNOLOGIES AG·Filed 2017·Granted Oct 23, 2018·0 cites·22 claims
- 2042US10153764B2Current measurement in a power semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2016·Granted Dec 11, 2018·0 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →