Inventor · disambiguated record
George D. Papasouliotis
Also filed as: PAPASOULIOTIS GEORGE · PAPASOULIOTIS GEORGE D · PAPASOULIOTIS GEORGE DEMETRIOS
51 granted patents·13 pending applications·5,860 citations·filing 1998–2024
99Inventor score
Files withNOVELLUS SYSTEMS INC30VARIAN SEMICONDUCTOR EQUIPMENT11PAPASOULIOTIS GEORGE D5VEECO INSTR INC4GODET LUDOVIC3
Top patents by PatentIndex Score
64 records- 0199US6030881AHigh throughput chemical vapor deposition process capable of filling high aspect ratio structuresNOVELLUS SYSTEMS INC·Filed 1998·Granted Feb 29, 2000·575 cites·34 claims
- 0298US7790633B1Sequential deposition/anneal film densification methodNOVELLUS SYSTEMS INC·Filed 2006·Granted Sep 7, 2010·643 cites·23 claims
- 0398US7625820B1Method of selective coverage of high aspect ratio structures with a conformal filmNOVELLUS SYSTEMS INC·Filed 2006·Granted Dec 1, 2009·530 cites·9 claims
- 0498US7589028B1Hydroxyl bond removal and film densification method for oxide films using microwave post treatmentNOVELLUS SYSTEMS INC·Filed 2005·Granted Sep 15, 2009·424 cites·25 claims
- 0598US7482247B1Conformal nanolaminate dielectric deposition and etch bag gap fill processNOVELLUS SYSTEMS INC·Filed 2006·Granted Jan 27, 2009·583 cites·27 claims
- 0698US7148155B1Sequential deposition/anneal film densification methodNOVELLUS SYSTEMS INC·Filed 2004·Granted Dec 12, 2006·416 cites·34 claims
- 0798US6867086B1Multi-step deposition and etch back gap fill processNOVELLUS SYSTEMS INC·Filed 2003·Granted Mar 15, 2005·475 cites·56 claims
- 0898US6846745B1High-density plasma process for filling high aspect ratio structuresNOVELLUS SYSTEMS INC·Filed 2002·Granted Jan 25, 2005·311 cites·28 claims
- 0998US6395150B1Very high aspect ratio gapfill using HDPNOVELLUS SYSTEMS INC·Filed 1998·Granted May 28, 2002·444 cites·12 claims
- 1098US6335261B1Directional CVD process with optimized etchbackIBM·Filed 2000·Granted Jan 1, 2002·214 cites·20 claims
- 1197US7863190B1Method of selective coverage of high aspect ratio structures with a conformal filmNOVELLUS SYSTEMS INC·Filed 2009·Granted Jan 4, 2011·47 cites·11 claims
- 1297US7109129B1Optimal operation of conformal silica deposition reactorsNOVELLUS SYSTEMS INC·Filed 2005·Granted Sep 19, 2006·71 cites·16 claims
- 1397US6794290B1Method of chemical modification of structure topographyNOVELLUS SYSTEMS INC·Filed 2001·Granted Sep 21, 2004·315 cites·32 claims
- 1496US7288463B1Pulsed deposition layer gap fill with expansion materialNOVELLUS SYSTEMS INC·Filed 2006·Granted Oct 30, 2007·47 cites·23 claims
- 1596US7163899B1Localized energy pulse rapid thermal anneal dielectric film densification methodNOVELLUS SYSTEMS INC·Filed 2006·Granted Jan 16, 2007·38 cites·38 claims
- 1695US9123509B2Techniques for plasma processing a substratePAPASOULIOTIS GEORGE D·Filed 2011·Granted Sep 1, 2015·39 cites·19 claims
- 1795US7135418B1Optimal operation of conformal silica deposition reactorsNOVELLUS SYSTEMS INC·Filed 2005·Granted Nov 14, 2006·29 cites·20 claims
- 1894US7586100B2Closed loop control and process optimization in plasma doping processes using a time of flight ion detectorVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2008·Granted Sep 8, 2009·35 cites·25 claims
- 1994US7078312B1Method for controlling etch process repeatabilityNOVELLUS SYSTEMS INC·Filed 2003·Granted Jul 18, 2006·163 cites·22 claims
- 2093US7297608B1Method for controlling properties of conformal silica nanolaminates formed by rapid vapor depositionNOVELLUS SYSTEMS INC·Filed 2004·Granted Nov 20, 2007·68 cites·32 claims
- 2191US7892985B1Method for porogen removal and mechanical strength enhancement of low-k carbon doped silicon oxide using low thermal budget microwave curingNOVELLUS SYSTEMS INC·Filed 2005·Granted Feb 22, 2011·18 cites·19 claims
- 2290US7202185B1Silica thin films produced by rapid surface catalyzed vapor deposition (RVD) using a nucleation layerNOVELLUS SYSTEMS INC·Filed 2004·Granted Apr 10, 2007·48 cites·37 claims
- 2389US8603591B2Enhanced etch and deposition profile control using plasma sheath engineeringGODET LUDOVIC·Filed 2009·Granted Dec 10, 2013·8 cites·13 claims
- 2489US7097878B1Mixed alkoxy precursors and methods of their use for rapid vapor deposition of SiO2 filmsNOVELLUS SYSTEMS INC·Filed 2004·Granted Aug 29, 2006·35 cites·19 claims
- 2588US7863194B2Implantation of multiple species to address copper reliabilityVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2010·Granted Jan 4, 2011·9 cites·8 claims
- 2687US7217658B1Process modulation to prevent structure erosion during gap fillNOVELLUS SYSTEMS INC·Filed 2004·Granted May 15, 2007·34 cites·41 claims
- 2785US8202792B2Method of processing a substrate having a non-planar surfacePAPASOULIOTIS GEORGE D·Filed 2010·Granted Jun 19, 2012·7 cites·4 claims
- 2884US6846391B1Process for depositing F-doped silica glass in high aspect ratio structuresNOVELLUS SYSTEMS·Filed 2001·Granted Jan 25, 2005·33 cites·35 claims
- 2983US8858816B2Enhanced etch and deposition profile control using plasma sheath engineeringVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2013·Granted Oct 14, 2014·4 cites·9 claims
- 3083US8664561B2System and method for selectively controlling ion composition of ion sourcesHADIDI KAMAL·Filed 2009·Granted Mar 4, 2014·7 cites·22 claims
- 3182US7129189B1Aluminum phosphate incorporation in silica thin films produced by rapid surface catalyzed vapor deposition (RVD)NOVELLUS SYSTEMS INC·Filed 2004·Granted Oct 31, 2006·26 cites·26 claims
- 3281US7491653B1Metal-free catalysts for pulsed deposition layer process for conformal silica laminatesNOVELLUS SYSTEMS INC·Filed 2005·Granted Feb 17, 2009·7 cites·28 claims
- 3381US7271112B1Methods for forming high density, conformal, silica nanolaminate films via pulsed deposition layer in structures of confined geometryNOVELLUS SYSTEMS INC·Filed 2004·Granted Sep 18, 2007·25 cites·17 claims
- 3481US7001854B1Hydrogen-based phosphosilicate glass process for gap fill of high aspect ratio structuresNOVELLUS SYSTEMS INC·Filed 2002·Granted Feb 21, 2006·35 cites·54 claims
- 3580US7176039B1Dynamic modification of gap fill process characteristicsNOVELLUS SYSTEMS INC·Filed 2004·Granted Feb 13, 2007·23 cites·30 claims
- 3678US7067440B1Gap fill for high aspect ratio structuresNOVELLUS SYSTEMS INC·Filed 2004·Granted Jun 27, 2006·17 cites·7 claims
- 3777US7687787B2Profile adjustment in plasma ion implanterVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2008·Granted Mar 30, 2010·6 cites·17 claims
- 3877US7294583B1Methods for the use of alkoxysilanol precursors for vapor deposition of SiO2 filmsNOVELLUS SYSTEMS INC·Filed 2004·Granted Nov 13, 2007·18 cites·23 claims
- 3975US9748113B2Method and apparatus for controlled dopant incorporation and activation in a chemical vapor deposition systemVEECO INSTR INC·Filed 2015·Granted Aug 29, 2017·2 cites·30 claims
- 4074US7737013B2Implantation of multiple species to address copper reliabilityVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2008·Granted Jun 15, 2010·5 cites·10 claims
- 4173US8679960B2Technique for processing a substrate having a non-planar surfacePAPASOULIOTIS GEORGE D·Filed 2010·Granted Mar 25, 2014·3 cites·21 claims
- 4271US7223707B1Dynamic rapid vapor deposition process for conformal silica laminatesNOVELLUS SYSTEMS INC·Filed 2004·Granted May 29, 2007·10 cites·36 claims
- 4370US8507372B2Method for processing a substrate having a non-planar substrate surfacePAPASOULIOTIS GEORGE D·Filed 2012·Granted Aug 13, 2013·2 cites·17 claims
- 4465US7927986B2Ion implantation with heavy halogenide compoundsVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2008·Granted Apr 19, 2011·2 cites·25 claims
- 4563US9240350B2Techniques for forming 3D structuresGODET LUDOVIC·Filed 2012·Granted Jan 19, 2016·1 cites·11 claims
- 4662US2025308900A1Situ protective polymer via milling-excitationFEI CO·Filed 2024·Application pending·0 cites
- 4761US8592783B2Titanium diboride coating for plasma processing apparatusHADIDI KAMAL·Filed 2011·Granted Nov 26, 2013·0 cites·10 claims
- 4860US7122485B1Deposition profile modification through process chemistryNOVELLUS SYSTEMS INC·Filed 2002·Granted Oct 17, 2006·8 cites·46 claims
- 4957US2010098851A1Techniques for atomic layer depositionVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2008·Application pending·0 cites
- 5053US2009227096A1Method Of Forming A Retrograde Material Profile Using Ion ImplantationVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2008·Application pending·0 cites
Showing the top 50 of 64 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →