Inventor · disambiguated record
Theodore S. Moise
Also filed as: MOISE IV THEODORE S · MOISE THEODORE · MOISE THEODORE S · MOISE THEODORE S IV
40 granted patents·2 pending applications·1,696 citations·filing 1994–2013
98Inventor score
Files withTEXAS INSTRUMENTS INC36ADVANCED TECH MATERIALS1AGILENT TECHNOLOGIES INC1CELII FRANCIS GABRIEL1NISHIDA TOSHIKAZU1
Top patents by PatentIndex Score
42 records- 0198US6211035B1Integrated circuit and methodTEXAS INSTRUMENTS INC·Filed 1999·Granted Apr 3, 2001·370 cites·4 claims
- 0297US7514734B2Hardmask for forming ferroelectric capacitors in a semiconductor device and methods for fabricating the sameTEXAS INSTRUMENTS INC·Filed 2005·Granted Apr 7, 2009·42 cites·10 claims
- 0395US6548343B1Method of fabricating a ferroelectric memory cellAGILENT TECHNOLOGIES INC·Filed 2000·Granted Apr 15, 2003·152 cites·21 claims
- 0495US6534809B2Hardmask designs for dry etching FeRAM capacitor stacksTEXAS INSTRUMENTS INC·Filed 2000·Granted Mar 18, 2003·111 cites·19 claims
- 0595US6528386B1Protection of tungsten alignment mark for FeRAM processingTEXAS INSTRUMENTS INC·Filed 2002·Granted Mar 4, 2003·84 cites·23 claims
- 0693US7001821B2Method of forming and using a hardmask for forming ferroelectric capacitors in a semiconductor deviceTEXAS INSTRUMENTS INC·Filed 2003·Granted Feb 21, 2006·63 cites·7 claims
- 0793US6444542B2Integrated circuit and methodTEXAS INSTRUMENTS INC·Filed 2001·Granted Sep 3, 2002·51 cites·2 claims
- 0893US6100200ASputtering process for the conformal deposition of a metallization or insulating layerADVANCED TECH MATERIALS·Filed 1998·Granted Aug 8, 2000·133 cites·50 claims
- 0992US7935543B2Method of forming PZT ferroelectric capacitors for integrated circuitsTEXAS INSTRUMENTS INC·Filed 2009·Granted May 3, 2011·20 cites·20 claims
- 1089US6635498B2Method of patterning a FeRAM capacitor with a sidewall during bottom electrode etchTEXAS INSTRUMENTS INC·Filed 2002·Granted Oct 21, 2003·48 cites·38 claims
- 1186US7220600B2Ferroelectric capacitor stack etch cleaning methodsTEXAS INSTRUMENTS INC·Filed 2004·Granted May 22, 2007·35 cites·20 claims
- 1286US6876021B2Use of amorphous aluminum oxide on a capacitor sidewall for use as a hydrogen barrierTEXAS INSTRUMENTS INC·Filed 2002·Granted Apr 5, 2005·43 cites·17 claims
- 1386US5442194ARoom-temperature tunneling hot-electron transistorTEXAS INSTRUMENTS INC·Filed 1994·Granted Aug 15, 1995·65 cites·18 claims
- 1484US6362499B1Ferroelectric transistors using thin film semiconductor gate electrodesTEXAS INSTRUMENTS INC·Filed 2000·Granted Mar 26, 2002·30 cites·15 claims
- 1584US6171970B1Method for forming high-density integrated circuit capacitorsTEXAS INSTRUMENTS INC·Filed 1999·Granted Jan 9, 2001·71 cites·8 claims
- 1682US6828161B2Method of forming an FeRAM having a multi-layer hard mask and patterning thereofTEXAS INSTRUMENTS INC·Filed 2002·Granted Dec 7, 2004·25 cites·34 claims
- 1782US6773930B2Method of forming an FeRAM capacitor having a bottom electrode diffusion barrierTEXAS INSTRUMENTS INC·Filed 2002·Granted Aug 10, 2004·32 cites·36 claims
- 1881US6984857B2Hydrogen barrier for protecting ferroelectric capacitors in a semiconductor device and methods for fabricating the sameTEXAS INSTRUMENTS INC·Filed 2003·Granted Jan 10, 2006·37 cites·26 claims
- 1981US6902939B2Integrated circuit and methodTEXAS INSTRUMENTS INC·Filed 2002·Granted Jun 7, 2005·18 cites·3 claims
- 2080US8723241B2MEMS device fabricated with integrated circuitTEXAS INSTRUMENTS INC·Filed 2013·Granted May 13, 2014·4 cites·4 claims
- 2180US6982448B2Ferroelectric capacitor hydrogen barriers and methods for fabricating the sameTEXAS INSTRUMENTS INC·Filed 2004·Granted Jan 3, 2006·23 cites·8 claims
- 2279US7361599B2Integrated circuit and methodTEXAS INSTRUMENTS INC·Filed 2005·Granted Apr 22, 2008·6 cites·5 claims
- 2378US6660612B1Design to prevent tungsten oxidation at contact alignment in FeRAMTEXAS INSTRUMENTS INC·Filed 2002·Granted Dec 9, 2003·30 cites·18 claims
- 2477US7183602B2Ferroelectric capacitor hydrogen barriers and methods for fabricating the sameTEXAS INSTRUMENTS INC·Filed 2005·Granted Feb 27, 2007·6 cites·4 claims
- 2577US6841396B2VIA0 etch process for FRAM integrationTEXAS INSTRUMENTS INC·Filed 2003·Granted Jan 11, 2005·18 cites·21 claims
- 2676US6225655B1Ferroelectric transistors using thin film semiconductor gate electrodesTEXAS INSTRUMENTS INC·Filed 1997·Granted May 1, 2001·32 cites·15 claims
- 2775US8093070B2Method for leakage reduction in fabrication of high-density FRAM arraysCELII FRANCIS GABRIEL·Filed 2007·Granted Jan 10, 2012·8 cites·19 claims
- 2874US6819601B2Programmable reference for 1T/1C ferroelectric memoriesTEXAS INSTRUMENTS INC·Filed 2003·Granted Nov 16, 2004·22 cites·17 claims
- 2971US7985603B2Ferroelectric capacitor manufacturing processTEXAS INSTRUMENTS INC·Filed 2008·Granted Jul 26, 2011·4 cites·18 claims
- 3068US8778774B2Enhancement of properties of thin film ferroelectric materialsNISHIDA TOSHIKAZU·Filed 2011·Granted Jul 15, 2014·3 cites·22 claims
- 3168US6441415B1Ferroelectric and paraelectric thin film devices using dopants which eliminate ferroelectricityTEXAS INSTRUMENTS INC·Filed 1999·Granted Aug 27, 2002·26 cites·5 claims
- 3265US7019352B2Low silicon-hydrogen sin layer to inhibit hydrogen related degradation in semiconductor devices having ferroelectric componentsTEXAS INSTRUMENTS INC·Filed 2003·Granted Mar 28, 2006·11 cites·41 claims
- 3354US6498502B2Apparatus and method for evaluating semiconductor structures and devicesTEXAS INSTRUMENTS INC·Filed 2000·Granted Dec 24, 2002·12 cites·3 claims
- 3452US6008917AApparatus and method for optical communicationTEXAS INSTRUMENTS INC·Filed 1997·Granted Dec 28, 1999·18 cites·22 claims
- 3549US6534348B1Ultrascaled MIS transistors fabricated using silicon-on-lattice-matched insulator approachTEXAS INSTRUMENTS INC·Filed 1999·Granted Mar 18, 2003·11 cites·18 claims
- 3647US7723199B2Method for cleaning post-etch noble metal residuesTEXAS INSTRUMENTS INC·Filed 2007·Granted May 25, 2010·0 cites·28 claims
- 3745US5985025ASemiconductor growth methodTEXAS INSTRUMENTS INC·Filed 1995·Granted Nov 16, 1999·10 cites·6 claims
- 3842US6521042B1Semiconductor growth methodTEXAS INSTRUMENTS INC·Filed 1996·Granted Feb 18, 2003·8 cites·6 claims
- 3940US5905272AOptical receiverTEXAS INSTRUMENTS INC·Filed 1997·Granted May 18, 1999·8 cites·15 claims
- 4038US6686210B1Methods for controlling the crystallographic texture of thin films with anisotropic ferroelectric polarization or permittivityTEXAS INSTRUMENTS INC·Filed 1999·Granted Feb 3, 2004·6 cites·9 claims
- 4137US2005145908A1High polarization ferroelectric capacitors for integrated circuitsFiled 2003·Application pending·0 cites
- 4236US2004217087A1Boron trichloride-based plasma etchFiled 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →