Inventor · disambiguated record
Byung-Seop Hong
Also filed as: COLLES JOSEPH H · HONG BYUNG S · HONG BYUNG-SEOP
9 granted patents·3 pending applications·173 citations·filing 1979–2005
88Inventor score
Top patents by PatentIndex Score
12 records- 0192US4191456AOptical block for high brightness full color video projection systemHUGHES AIRCRAFT CO·Filed 1979·Granted Mar 4, 1980·102 cites·6 claims
- 0282US7029999B2Method for fabricating transistor with polymetal gate electrodeHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Apr 18, 2006·30 cites·17 claims
- 0377US6777305B2Method for fabricating semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Aug 17, 2004·17 cites·17 claims
- 0466US6730583B2Method for fabricating semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2001·Granted May 4, 2004·11 cites·14 claims
- 0558US6656789B2Capacitor for highly-integrated semiconductor memory devices and a method for manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Dec 2, 2003·6 cites·32 claims
- 0650US6936529B2Method for fabricating gate-electrode of semiconductor device with use of hard maskHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Aug 30, 2005·4 cites·14 claims
- 0748US7265039B2Method for fabricating semiconductor device with improved refresh timeHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Sep 4, 2007·2 cites·14 claims
- 0846US7067408B2Method for releasing stress during semiconductor device fabricationHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Jun 27, 2006·1 cites·23 claims
- 0943US2004241940A1Method for fabricating semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2004·Application pending·0 cites
- 1042US6964900B2Capacitor in semiconductor device having dual dielectric film structure and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Nov 15, 2005·0 cites·10 claims
- 1142US2005280066A1Capacitor in semiconductor device having dual dielectric film structure and method for fabricating the sameLEE KEE J·Filed 2005·Application pending·0 cites
- 1234US2005019992A1Method for manufacturing gate electrode for use in semiconductor deviceFiled 2003·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →