Inventor · disambiguated record
Gilberto Curatola
Also filed as: CURATOLA GILBERTO · CURATOLA GILBERTO A
53 granted patents·18 pending applications·221 citations·filing 2006–2025
98Inventor score
Files withINFINEON TECHNOLOGIES AUSTRIA AG24CURATOLA GILBERTO10INFINEON TECHNOLOGIES AUSTRIA10HUAWEI TECH CO LTD7NXP BV6
Top patents by PatentIndex Score
71 records- 0198US11417758B2Enhancement mode Group III nitride-based transistor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Aug 16, 2022·5 cites·18 claims
- 0298US9356017B1Switch circuit and semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2015·Granted May 31, 2016·28 cites·20 claims
- 0396US10332876B2Method of forming compound semiconductor bodyINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Jun 25, 2019·16 cites·17 claims
- 0496US9305917B1High electron mobility transistor with RC network integrated into gate structureINFINEON TECHNOLOGIES AUSTRIA·Filed 2015·Granted Apr 5, 2016·15 cites·20 claims
- 0593US9570438B1Avalanche-rugged quasi-vertical HEMTINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Feb 14, 2017·9 cites·27 claims
- 0691US9123791B2Semiconductor device and methodINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Granted Sep 1, 2015·9 cites·20 claims
- 0790US9884715B2Food package with integrated RFID-tag and sensorHOOFMAN ROMANO·Filed 2011·Granted Feb 6, 2018·18 cites·17 claims
- 0889US10840353B2High electron mobility transistor with dual thickness barrier layerINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Nov 17, 2020·4 cites·7 claims
- 0989US8586993B2Normally-off compound semiconductor tunnel transistorCURATOLA GILBERTO·Filed 2012·Granted Nov 19, 2013·8 cites·26 claims
- 1088US10153362B2Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Dec 11, 2018·5 cites·14 claims
- 1187US9024356B2Compound semiconductor device with buried field plateCURATOLA GILBERTO·Filed 2011·Granted May 5, 2015·7 cites·16 claims
- 1287US8362561B2Transistor device and method of manufacturing such a transistor deviceNXP BV·Filed 2007·Granted Jan 29, 2013·15 cites·20 claims
- 1386US10516023B2High electron mobility transistor with deep charge carrier gas contact structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Dec 24, 2019·4 cites·21 claims
- 1486US9034637B2Apparatus and method for molecule detection using nanoporesMERZ MATTHIAS·Filed 2008·Granted May 19, 2015·11 cites·28 claims
- 1585US11289593B2Breakdown resistant HEMT substrate and deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Mar 29, 2022·4 cites·12 claims
- 1685US7839209B2Tunnel field effect transistorNXP BV·Filed 2007·Granted Nov 23, 2010·12 cites·10 claims
- 1783US10636899B2High electron mobility transistor with graded back-barrier regionINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Apr 28, 2020·4 cites·16 claims
- 1880US9196693B2Method of manufacturing a semiconductor device having a buried field plateINFINEON TECHNOLOGIES AUSTRIA·Filed 2015·Granted Nov 24, 2015·2 cites·10 claims
- 1977US9553183B2Gate stack for normally-off compound semiconductor transistorINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2013·Granted Jan 24, 2017·3 cites·8 claims
- 2075US8801917B2Electrochemical potentiometric sensing without reference electrodeMERZ MATTHIAS·Filed 2009·Granted Aug 12, 2014·3 cites·22 claims
- 2175US8674372B2HEMT with integrated low forward bias diodeCURATOLA GILBERTO·Filed 2011·Granted Mar 18, 2014·3 cites·29 claims
- 2272US9406673B2Semiconductor component with transistorINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2013·Granted Aug 2, 2016·3 cites·27 claims
- 2372US7923346B2Field effect transistor structure with an insulating layer at the junctionNXP BV·Filed 2006·Granted Apr 12, 2011·5 cites·5 claims
- 2470US9373688B2Normally-off high electron mobility transistorsCURATOLA GILBERTO·Filed 2011·Granted Jun 21, 2016·3 cites·26 claims
- 2567US11721754B2Enhancement mode transistor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Granted Aug 8, 2023·0 cites·21 claims
- 2667US10038085B2High electron mobility transistor with carrier injection mitigation gate structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Jul 31, 2018·1 cites·4 claims
- 2766US10074597B2Interdigit device on leadframe for evenly distributed current flowINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2017·Granted Sep 11, 2018·1 cites·20 claims
- 2865US9559161B2Patterned back-barrier for III-nitride semiconductor devicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2014·Granted Jan 31, 2017·1 cites·18 claims
- 2965US9443941B2Compound semiconductor transistor with self aligned gateHÄBERLEN OLIVER·Filed 2012·Granted Sep 13, 2016·3 cites·6 claims
- 3065US8952421B2RF power HEMT grown on a silicon or SiC substrate with a front-side plug connectionINFINEON TECHNOLOGIES AUSTRIA·Filed 2012·Granted Feb 10, 2015·2 cites·20 claims
- 3165US8900985B2Self-doped ohmic contacts for compound semiconductor devicesINFINEON TECHNOLOGIES AUSTRIA·Filed 2012·Granted Dec 2, 2014·2 cites·20 claims
- 3265US2022173235A1Breakdown Resistant HEMT Substrate and DeviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Application pending·0 cites
- 3364US9564524B2Semiconductor device and methodINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Feb 7, 2017·1 cites·17 claims
- 3464US8637375B2Method of manufacturing a tunnel transistor and IC comprising the sameCURATOLA GILBERTO·Filed 2009·Granted Jan 28, 2014·2 cites·10 claims
- 3563US9356130B2HEMT with compensation structureINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Granted May 31, 2016·1 cites·20 claims
- 3663US8823443B2Charge-pump circuitCURATOLA GILBERTO·Filed 2009·Granted Sep 2, 2014·6 cites·11 claims
- 3763US2025079332A1Power converter package with shielding against common mode conducted emissionsHUAWEI DIGITAL POWER TECH CO LTD·Filed 2024·Application pending·0 cites
- 3863US2025112109A1Semiconductor Package and Method for Manufacturing Semiconductor PackageHUAWEI DIGITAL POWER TECH CO LTD·Filed 2024·Application pending·0 cites
- 3962US2025070070A1Semiconductor package and method for manufacturing a semiconductor packageHUAWEI DIGITAL POWER TECH CO LTD·Filed 2024·Application pending·0 cites
- 4062US2025338538A1Semiconductor Device with Hollow ChambersHUAWEI DIGITAL POWER TECH CO LTD·Filed 2025·Application pending·0 cites
- 4161US2024405114A1Field effect transistor and method of manufacturing thereofHUAWEI TECH CO LTD·Filed 2024·Application pending·0 cites
- 4261US2024258418A1Transistor devices, power devices, and method of manufacturing thereofHUAWEI TECH CO LTD·Filed 2024·Application pending·0 cites
- 4358US2023352542A1Multi-terminal gallium nitride power transistorHUAWEI TECH CO LTD·Filed 2023·Application pending·0 cites
- 4457US9397208B2Compound semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2015·Granted Jul 19, 2016·0 cites·16 claims
- 4557US8906534B2Stacked multi-cell battery conceptHOOFMAN ROMANO·Filed 2009·Granted Dec 9, 2014·0 cites·20 claims
- 4657US8709885B2Schottky diode and method of manufactureVELLIANITIS GEORGIOS·Filed 2010·Granted Apr 29, 2014·1 cites·18 claims
- 4757US2023335597A1Gallium nitride power transistorHUAWEI TECH CO LTD·Filed 2023·Application pending·0 cites
- 4856US8835932B2Normally-off compound semiconductor tunnel transistor with a plurality of charge carrier gasesINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Sep 16, 2014·0 cites·17 claims
- 4956US2024079233A1Member, transistor devices, power devices, and method for manufacturing memberHUAWEI TECH CO LTD·Filed 2023·Application pending·0 cites
- 5055US8569799B2III-V semiconductor devices with buried contactsCURATOLA GILBERTO·Filed 2011·Granted Oct 29, 2013·1 cites·24 claims
Showing the top 50 of 71 patent records by PatentIndex Score.
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