Inventor · disambiguated record
Stephen F. Geissler
Also filed as: GEISSLER STEPHEN F · GEISSLER STEPHEN FRANK
14 granted patents·533 citations·filing 1991–2009
94Inventor score
Files withIBM14
Top patents by PatentIndex Score
14 records- 0197US5629544ASemiconductor diode with silicide films and trench isolationIBM·Filed 1995·Granted May 13, 1997·202 cites·42 claims
- 0281US5434109AOxidation of silicon nitride in semiconductor devicesIBM·Filed 1993·Granted Jul 18, 1995·76 cites·17 claims
- 0378US7042776B2Method and circuit for dynamic read margin control of a memory arrayIBM·Filed 2004·Granted May 9, 2006·28 cites·14 claims
- 0474US7472320B2Autonomous self-monitoring and corrective operation of an integrated circuitIBM·Filed 2004·Granted Dec 30, 2008·17 cites·27 claims
- 0574US6245600B1Method and structure for SOI wafers to avoid electrostatic dischargeIBM·Filed 1999·Granted Jun 12, 2001·38 cites·15 claims
- 0672US6410962B2Structure for SOI wafers to avoid electrostatic dischargeIBM·Filed 2001·Granted Jun 25, 2002·16 cites·15 claims
- 0770US7782114B2Design structure for a high-speed level shifterIBM·Filed 2009·Granted Aug 24, 2010·5 cites·21 claims
- 0868US5498564AStructure and method for reducing parasitic leakage in a memory array with merged isolation and node trench constructionIBM·Filed 1995·Granted Mar 12, 1996·38 cites·10 claims
- 0968US5185294ABoron out-diffused surface strap processIBM·Filed 1991·Granted Feb 9, 1993·42 cites·22 claims
- 1067US5753951AEEPROM cell with channel hot electron programming and method for forming the sameIBM·Filed 1995·Granted May 19, 1998·25 cites·13 claims
- 1165US5448090AStructure for reducing parasitic leakage in a memory array with merged isolation and node trench constructionIBM·Filed 1994·Granted Sep 5, 1995·36 cites·21 claims
- 1245US5874337AMethod of forming eeprom cell with channel hot electron programmingIBM·Filed 1997·Granted Feb 23, 1999·8 cites·8 claims
- 1343US7564290B2Design structure for a high-speed level shifterIBM·Filed 2007·Granted Jul 21, 2009·0 cites·17 claims
- 1440US6888402B2Low voltage current reference circuitsIBM·Filed 2003·Granted May 3, 2005·2 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →