Inventor · disambiguated record
De Yuan Xiao
Also filed as: XIAO DE YUAN
17 granted patents·1 pending application·30 citations·filing 2008–2016
90Inventor score
Files withSEMICONDUCTOR MFG INT SHANGHAI10XIAO DE YUAN4SEMICONDUCTOR MFG INT SHANGHAI CORP3SEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION1
Top patents by PatentIndex Score
18 records- 0188US8884363B2System and method for integrated circuits with cylindrical gate structuresXIAO DE YUAN·Filed 2010·Granted Nov 11, 2014·12 cites·21 claims
- 0281US9853026B2FinFET device and fabrication method thereofSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2014·Granted Dec 26, 2017·4 cites·20 claims
- 0376US9224812B2System and method for integrated circuits with cylindrical gate structuresSEMICONDUCTOR MFG INT SHANGHAI·Filed 2014·Granted Dec 29, 2015·3 cites·24 claims
- 0473US8293635B2Method and system for forming conductive bumping with copper interconnectionXIAO DE YUAN·Filed 2011·Granted Oct 23, 2012·3 cites·12 claims
- 0572US9209289B2Semiconductor device and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI·Filed 2014·Granted Dec 8, 2015·3 cites·20 claims
- 0668US9029222B2Three-dimensional quantum well transistor and fabrication methodSEMICONDUCTOR MFG INT SHANGHAI·Filed 2013·Granted May 12, 2015·2 cites·11 claims
- 0764US9373694B2System and method for integrated circuits with cylindrical gate structuresSEMICONDUCTOR MFG INT SHANGHAI·Filed 2013·Granted Jun 21, 2016·1 cites·11 claims
- 0864US8053907B2Method and system for forming conductive bumping with copper interconnectionSEMICONDUCTOR MFG INT SHANGHAI·Filed 2008·Granted Nov 8, 2011·2 cites·10 claims
- 0953US9922878B2Hybrid integrated semiconductor tri-gate and split dual-gate FinFET devices and method for manufacturingSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2012·Granted Mar 20, 2018·0 cites·20 claims
- 1053US9269772B2Semiconductor device and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI·Filed 2014·Granted Feb 23, 2016·0 cites·11 claims
- 1151US9673060B2System and method for integrated circuits with cylindrical gate structuresSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2016·Granted Jun 6, 2017·0 cites·10 claims
- 1251US9437709B2Semiconductor device and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2016·Granted Sep 6, 2016·0 cites·11 claims
- 1350US8581366B2Method and system for forming conductive bumping with copper interconnectionXIAO DE YUAN·Filed 2012·Granted Nov 12, 2013·0 cites·11 claims
- 1449US8889510B2Surrounding stacked gate multi-gate FET structure nonvolatile memory deviceSEMICONDUCTOR MFG INT SHANGHAI·Filed 2013·Granted Nov 18, 2014·0 cites·18 claims
- 1548US9093354B1Three-dimensional quantum well transistorSEMICONDUCTOR MFG INT SHANGHAI·Filed 2015·Granted Jul 28, 2015·0 cites·9 claims
- 1641US9136183B2Transistor device and fabrication methodSEMICONDUCTOR MFG INT SHANGHAI·Filed 2013·Granted Sep 15, 2015·0 cites·9 claims
- 1741US2015129926A1Semiconductor device and manufacturing method thereofSEMICONDUCTOR MFG INT SHANGHAI·Filed 2014·Application pending·0 cites
- 1836US8471323B23-D electrically programmable and erasable single-transistor non-volatile semiconductor memory deviceXIAO DE YUAN·Filed 2010·Granted Jun 25, 2013·0 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →