Inventor · disambiguated record
Kentaro Oishi
Also filed as: OISHI KENTARO
27 granted patents·9 pending applications·503 citations·filing 1998–2024
97Inventor score
Files withRENESAS ELECTRONICS CORP9NUMAZAWA SUMITO6HITACHI LTD5RENESAS TECH CORP5DAINIPPON INK & CHEMICALS3
Top patents by PatentIndex Score
36 records- 0198US6168996B1Method of fabricating semiconductor deviceHITACHI LTD·Filed 1998·Granted Jan 2, 2001·263 cites·23 claims
- 0296US7361557B2Insulated gate type semiconductor device and method for fabricating the sameRENESAS TECH CORP·Filed 2007·Granted Apr 22, 2008·26 cites·6 claims
- 0391US6455378B1Method of manufacturing a trench gate power transistor with a thick bottom insulatorHITACHI LTD·Filed 2000·Granted Sep 24, 2002·70 cites·10 claims
- 0491US6307231B1Method of fabricating semiconductor deviceHITACHI LTD·Filed 2000·Granted Oct 23, 2001·34 cites·14 claims
- 0586US6803281B2Method of fabricating semiconductor deviceRENESAS TECH CORP·Filed 2004·Granted Oct 12, 2004·18 cites·6 claims
- 0686US6410959B2Method of fabricating semiconductor deviceHITACHI LTD·Filed 2001·Granted Jun 25, 2002·20 cites·9 claims
- 0784US6858896B2Insulated gate type semiconductor device and method for fabricating the sameRENESAS TECH CORP·Filed 2002·Granted Feb 22, 2005·19 cites·15 claims
- 0884US6512265B2Method of fabricating semiconductor deviceHITACHI LTD·Filed 2002·Granted Jan 28, 2003·17 cites·5 claims
- 0983US6720220B2Method of fabricating semiconductor deviceRENESAS TECH CORP·Filed 2002·Granted Apr 13, 2004·15 cites·5 claims
- 1079US8642401B2Insulated gate type semiconductor device and method for fabricating the sameRENESAS ELECTRONICS CORP·Filed 2013·Granted Feb 4, 2014·2 cites·6 claims
- 1178US8278708B2Insulated gate type semiconductor device and method for fabricating the sameINAGAWA HIROSHI·Filed 2012·Granted Oct 2, 2012·2 cites·8 claims
- 1278US8148224B2Insulated gate type semiconductor device and method for fabricating the sameINAGAWA HIROSHI·Filed 2011·Granted Apr 3, 2012·2 cites·12 claims
- 1372US8377775B2Insulated gate type semiconductor device and method for fabricating the sameRENESAS ELECTRONICS CORP·Filed 2012·Granted Feb 19, 2013·1 cites·8 claims
- 1472US7910990B2Insulated gate type semiconductor device and method for fabricating the sameRENESAS ELECTRONICS CORP·Filed 2010·Granted Mar 22, 2011·1 cites·4 claims
- 1571US8168498B2Insulated gate type semiconductor device and method for fabricating the sameINAGAWA HIROSHI·Filed 2010·Granted May 1, 2012·1 cites·10 claims
- 1669US8076202B2Method of fabricating semiconductor deviceNUMAZAWA SUMITO·Filed 2010·Granted Dec 13, 2011·1 cites·16 claims
- 1768US7172941B2Insulated gate type semiconductor device and method for fabricating the sameHITACHI TOBU SEMICONDUCTOR LTD·Filed 2004·Granted Feb 6, 2007·7 cites·1 claims
- 1867US7843001B2Insulated gate type semiconductor device and method for fabricating the sameRENESAS ELECTRONICS CORP·Filed 2009·Granted Nov 30, 2010·1 cites·6 claims
- 1967US2024280512A1Method for discriminating carbon blackSUMITOMO RUBBER IND·Filed 2024·Application pending·0 cites
- 2066US7585732B2Insulated gate type semiconductor device and method for fabricating the sameRENESAS TECH CORP·Filed 2008·Granted Sep 8, 2009·1 cites·8 claims
- 2163US2023280256A1Analysis methodSUMITOMO RUBBER IND·Filed 2023·Application pending·0 cites
- 2262US11976199B2Halogenated zinc phthalocyanine pigment for color filter and method for producing halogenated zinc phthalocyanine pigment for color filterDAINIPPON INK & CHEMICALS·Filed 2020·Granted May 7, 2024·0 cites·12 claims
- 2362US9275863B2Method of fabricating semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2014·Granted Mar 1, 2016·0 cites·3 claims
- 2461US9793342B2Insulated gate type semiconductor device and method for fabricating the sameRENESAS ELECTRONICS CORP·Filed 2015·Granted Oct 17, 2017·0 cites·3 claims
- 2561US9246000B2Insulated gate type semiconductor device and method for fabricating the sameRENESAS ELECTRONICS CORP·Filed 2013·Granted Jan 26, 2016·0 cites·4 claims
- 2661US2014225189A1Method of fabricating semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2014·Application pending·0 cites
- 2759US12139615B2Method for producing halogenated zinc phthalocyanine pigmentDAINIPPON INK & CHEMICALS·Filed 2020·Granted Nov 12, 2024·0 cites·6 claims
- 2858US2023322279A1Track condition monitoring device, track condition monitoring system and track condition monitoring methodKAWASAKI RAILCAR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2956US8354713B2Method of fabricating semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2011·Granted Jan 15, 2013·0 cites·10 claims
- 3054US8748266B2Method of fabricating semiconductor deviceNUMAZAWA SUMITO·Filed 2011·Granted Jun 10, 2014·0 cites·5 claims
- 3154US7180130B2Method of fabricating semiconductor deviceHITACHI ULSI SYS CO LTD·Filed 2004·Granted Feb 20, 2007·2 cites·7 claims
- 3254US2023287218A1Halogenated zinc phthalocyanine pigment and production method for sameDAINIPPON INK & CHEMICALS·Filed 2021·Application pending·0 cites
- 3352US2007290239A1Method of fabricating semiconductor deviceNUMAZAWA SUMITO·Filed 2007·Application pending·0 cites
- 3452US2007290268A1Method of fabricating semiconductor deviceNUMAZAWA SUMITO·Filed 2007·Application pending·0 cites
- 3552US2007278567A1Method of fabricating semiconductor deviceNUMAZAWA SUMITO·Filed 2007·Application pending·0 cites
- 3651US2007111423A1Method of fabricating semiconductor deviceNUMAZAWA SUMITO·Filed 2007·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Kentaro Oishi files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →