Inventor · disambiguated record
Renee T. Mo
Also filed as: MO RENEE · MO RENEE T · MO RENEE TONG
98 granted patents·10 pending applications·1,131 citations·filing 2003–2019
99Inventor score
Top patents by PatentIndex Score
108 records- 0198US8217423B2Structure and method for mobility enhanced MOSFETs with unalloyed silicideLIU YAOCHENG·Filed 2007·Granted Jul 10, 2012·97 cites·8 claims
- 0297US9739728B1Automatic defect detection and classification for high throughput electron channeling contrast imagingIBM·Filed 2016·Granted Aug 22, 2017·16 cites·19 claims
- 0397US8766259B2Test structure for detection of gap in conductive layer of multilayer gate stackIBM·Filed 2013·Granted Jul 1, 2014·57 cites·12 claims
- 0497US7652332B2Extremely-thin silicon-on-insulator transistor with raised source/drainIBM·Filed 2007·Granted Jan 26, 2010·50 cites·13 claims
- 0597US7002214B1Ultra-thin body super-steep retrograde well (SSRW) FET devicesIBM·Filed 2004·Granted Feb 21, 2006·160 cites·20 claims
- 0696US9768195B2Semiconductor structure with integrated passive structuresIBM·Filed 2016·Granted Sep 19, 2017·8 cites·16 claims
- 0796US8399266B2Test structure for detection of gap in conductive layer of multilayer gate stackMO RENEE T·Filed 2011·Granted Mar 19, 2013·83 cites·8 claims
- 0896US7071103B2Chemical treatment to retard diffusion in a semiconductor overlayerIBM·Filed 2004·Granted Jul 4, 2006·120 cites·25 claims
- 0995US6790733B1Preserving TEOS hard mask using COR for raised source-drain including removable/disposable spacerIBM·Filed 2003·Granted Sep 14, 2004·122 cites·23 claims
- 1094US8878298B2Multiple Vt field-effect transistor devicesCHANG JOSEPHINE B·Filed 2012·Granted Nov 4, 2014·17 cites·16 claims
- 1194US8110467B2Multiple Vt field-effect transistor devicesCHANG JOSEPHINE B·Filed 2009·Granted Feb 7, 2012·24 cites·11 claims
- 1293US10037989B1III-V lateral bipolar integration with siliconIBM·Filed 2017·Granted Jul 31, 2018·8 cites·20 claims
- 1393US8642434B2Structure and method for mobility enhanced MOSFETS with unalloyed silicideLIU YAOCHENG·Filed 2012·Granted Feb 4, 2014·14 cites·14 claims
- 1493US7871869B2Extremely-thin silicon-on-insulator transistor with raised source/drainIBM·Filed 2009·Granted Jan 18, 2011·24 cites·7 claims
- 1592US10062694B2Patterned gate dielectrics for III-V-based CMOS circuitsIBM·Filed 2017·Granted Aug 28, 2018·5 cites·12 claims
- 1692US9680018B2Method of forming high-germanium content silicon germanium alloy fins on insulatorIBM·Filed 2015·Granted Jun 13, 2017·7 cites·12 claims
- 1792US9437614B1Dual-semiconductor complementary metal-oxide-semiconductor deviceIBM·Filed 2015·Granted Sep 6, 2016·7 cites·7 claims
- 1892US6991979B2Method for avoiding oxide undercut during pre-silicide clean for thin spacer FETsIBM·Filed 2003·Granted Jan 31, 2006·52 cites·9 claims
- 1990US7648868B2Metal-gated MOSFET devices having scaled gate stack thicknessIBM·Filed 2007·Granted Jan 19, 2010·15 cites·20 claims
- 2089US9988678B2DNA sequencing detection field effect transistorIBM·Filed 2015·Granted Jun 5, 2018·3 cites·18 claims
- 2189US8216907B2Process to fabricate a metal high-K transistor having first and second silicon sidewalls for reduced parasitic capacitanceCHANG LELAND·Filed 2010·Granted Jul 10, 2012·8 cites·13 claims
- 2289US7754594B1Method for tuning the threshold voltage of a metal gate and high-k deviceIBM·Filed 2009·Granted Jul 13, 2010·17 cites·23 claims
- 2388US9252018B2High-k/metal gate transistor with L-shaped gate encapsulation layerMO RENEE T·Filed 2012·Granted Feb 2, 2016·9 cites·20 claims
- 2487US9698239B2Growing groups III-V lateral nanowire channelsIBM·Filed 2016·Granted Jul 4, 2017·3 cites·18 claims
- 2587US9627271B1III-V compound semiconductor channel material formation on mandrel after middle-of-the-line dielectric formationIBM·Filed 2016·Granted Apr 18, 2017·5 cites·20 claims
- 2686US9553166B1Asymmetric III-V MOSFET on silicon substrateIBM·Filed 2015·Granted Jan 24, 2017·4 cites·10 claims
- 2786US8101518B2Method and process for forming a self-aligned silicide contactCABRAL JR CYRIL·Filed 2008·Granted Jan 24, 2012·12 cites·27 claims
- 2886US7993995B2Metal-gated MOSFET devices having scaled gate stack thickness including gettering species in a buried oxideIBM·Filed 2010·Granted Aug 9, 2011·7 cites·14 claims
- 2985US9773903B2Asymmetric III-V MOSFET on silicon substrateIBM·Filed 2016·Granted Sep 26, 2017·3 cites·18 claims
- 3085US7498271B1Nitrogen based plasma process for metal gate MOS deviceIBM·Filed 2008·Granted Mar 3, 2009·10 cites·2 claims
- 3184US8021939B2High-k dielectric and metal gate stack with minimal overlap with isolation region and related methodsIBM·Filed 2007·Granted Sep 20, 2011·9 cites·14 claims
- 3284US7776732B2Metal high-K transistor having silicon sidewall for reduced parasitic capacitance, and process to fabricate sameIBM·Filed 2007·Granted Aug 17, 2010·8 cites·10 claims
- 3383US7855135B2Method to reduce parastic capacitance in a metal high dielectric constant (MHK) transistorIBM·Filed 2009·Granted Dec 21, 2010·7 cites·11 claims
- 3483US7843007B2Metal high-k transistor having silicon sidewall for reduced parasitic capacitanceIBM·Filed 2009·Granted Nov 30, 2010·7 cites·12 claims
- 3583US7611979B2Metal gates with low charge trapping and enhanced dielectric reliability characteristics for high-k gate dielectric stacksIBM·Filed 2007·Granted Nov 3, 2009·8 cites·6 claims
- 3682US10103242B2Growing groups III-V lateral nanowire channelsIBM·Filed 2015·Granted Oct 16, 2018·2 cites·15 claims
- 3782US10062693B2Patterned gate dielectrics for III-V-based CMOS circuitsIBM·Filed 2016·Granted Aug 28, 2018·2 cites·12 claims
- 3881US10672671B2Distinct gate stacks for III-V-based CMOS circuits comprising a channel capIBM·Filed 2017·Granted Jun 2, 2020·2 cites·15 claims
- 3981US9219059B2Semiconductor structure with integrated passive structuresIBM·Filed 2012·Granted Dec 22, 2015·2 cites·13 claims
- 4080US8667448B1Integrated circuit having local maximum operating voltageIBM·Filed 2012·Granted Mar 4, 2014·5 cites·13 claims
- 4180US7091128B2Method for avoiding oxide undercut during pre-silicide clean for thin spacer FETsIBM·Filed 2005·Granted Aug 15, 2006·6 cites·10 claims
- 4279US9627266B2Dual-semiconductor complementary metal-oxide-semiconductor deviceIBM·Filed 2016·Granted Apr 18, 2017·2 cites·13 claims
- 4379US8039382B2Method for forming self-aligned metal silicide contactsIBM·Filed 2009·Granted Oct 18, 2011·6 cites·10 claims
- 4477US9859397B2Growing groups III-V lateral nanowire channelsIBM·Filed 2017·Granted Jan 2, 2018·1 cites·20 claims
- 4577US7618891B2Method for forming self-aligned metal silicide contactsIBM·Filed 2006·Granted Nov 17, 2009·6 cites·22 claims
- 4676US10205003B1Surface roughness of III-V fin formed on silicon sidewall by implementing sacrificial buffersIBM·Filed 2018·Granted Feb 12, 2019·2 cites·20 claims
- 4776US7943460B2High-K metal gate CMOSIBM·Filed 2009·Granted May 17, 2011·5 cites·7 claims
- 4876US7919379B2Dielectric spacer removalIBM·Filed 2007·Granted Apr 5, 2011·5 cites·14 claims
- 4976US7781321B2Electroless metal deposition for dual work functionIBM·Filed 2008·Granted Aug 24, 2010·6 cites·15 claims
- 5075US8232606B2High-K dielectric and metal gate stack with minimal overlap with isolation regionCHUDZIK MICHAEL P·Filed 2011·Granted Jul 31, 2012·3 cites·7 claims
Showing the top 50 of 108 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →