Inventor · disambiguated record
Chen-Chung Hsu
Also filed as: HSU CHEN · HSU CHEN-CHUNG
99 granted patents·1 pending application·3,950 citations·filing 1993–2022
99Inventor score
Files withUNITED MICROELECTRONICS CORP95HSU CHEN1PRO SIGHT MEDICAL TECH CORP LTD1UNITED MICORELECTRONICS CORP1UNITED MICROELECTRONICWS CORP1
Top patents by PatentIndex Score
100 records- 0199US5627106ATrench method for three dimensional chip connecting during IC fabricationUNITED MICROELECTRONICS CORP·Filed 1994·Granted May 6, 1997·523 cites·33 claims
- 0299US5481133AThree-dimensional multichip packageUNITED MICROELECTRONICS CORP·Filed 1994·Granted Jan 2, 1996·564 cites·13 claims
- 0399US5380681AThree-dimensional multichip package and methods of fabricatingUNITED MICROELECTRONICS CORP·Filed 1994·Granted Jan 10, 1995·412 cites·17 claims
- 0497US5946558AMethod of making ROM componentsUNITED MICROELECTRONICS CORP·Filed 1997·Granted Aug 31, 1999·201 cites·13 claims
- 0597US5858841AROM device having memory units arranged in three dimensions, and a method of making the sameUNITED MICROELECTRONICS CORP·Filed 1997·Granted Jan 12, 1999·149 cites·6 claims
- 0695US6018186AThree-dimensional, deep-trench, high-density read-only memory (ROM) and its manufacturing methodUNITED MICROELECTRONICS CORP·Filed 1997·Granted Jan 25, 2000·99 cites·6 claims
- 0793US5491099AMethod of making silicided LDD with recess in semiconductor substrateUNITED MICROELECTRONICS CORP·Filed 1994·Granted Feb 13, 1996·94 cites·18 claims
- 0889US6174804B1Dual damascene manufacturing processUNITED MICROELECTRONICS CORP·Filed 1998·Granted Jan 16, 2001·103 cites·33 claims
- 0989US5693552AMethod for fabricating read-only memory device with a three-dimensional memory cell structureUNITED MICROELECTRONICS CORP·Filed 1996·Granted Dec 2, 1997·69 cites·7 claims
- 1089US5576227AProcess for fabricating a recessed gate MOS deviceUNITED MICROELECTRONICS CORP·Filed 1994·Granted Nov 19, 1996·119 cites·14 claims
- 1188US5783457AMethod of making a flash memory cell having an asymmetric source and drain pocket structureUNITED MICROELECTRONICS CORP·Filed 1997·Granted Jul 21, 1998·80 cites·14 claims
- 1285US5828103ARecessed lightly doped drain (LDD) for higher performance MOSFETUNITED MICROELECTRONICWS CORP·Filed 1995·Granted Oct 27, 1998·64 cites·4 claims
- 1384US5472897AMethod for fabricating MOS device with reduced anti-punchthrough regionUNITED MICROELECTRONICS CORP·Filed 1995·Granted Dec 5, 1995·60 cites·13 claims
- 1478US5516717AMethod for manufacturing electrostatic discharge devicesUNITED MICROELECTRONICS CORP·Filed 1995·Granted May 14, 1996·44 cites·9 claims
- 1578US5448094AConcave channel MOS transistor and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 1994·Granted Sep 5, 1995·42 cites·10 claims
- 1677US5633530AMultichip module having a multi-level configurationUNITED MICROELECTRONICS CORP·Filed 1995·Granted May 27, 1997·52 cites·12 claims
- 1776US6153913AElectrostatic discharge protection circuitUNITED MICROELECTRONICS CORP·Filed 1999·Granted Nov 28, 2000·36 cites·13 claims
- 1876US5627393AVertical channel device having buried sourceUNITED MICROELECTRONICS CORP·Filed 1995·Granted May 6, 1997·33 cites·18 claims
- 1976US5455190AMethod of making a vertical channel device using buried source techniquesUNITED MICROELECTRONICS CORP·Filed 1994·Granted Oct 3, 1995·34 cites·44 claims
- 2076US5453635ALightly doped drain transistor device having the polysilicon sidewall spacersUNITED MICROELECTRONICS CORP·Filed 1994·Granted Sep 26, 1995·33 cites·4 claims
- 2174US5777486AElectromigration test pattern simulating semiconductor componentsUNITED MICROELECTRONICS CORP·Filed 1996·Granted Jul 7, 1998·36 cites·9 claims
- 2274US5585299AProcess for fabricating a semiconductor electrostatic discharge (ESD) protective deviceUNITED MICROELECTRONICS CORP·Filed 1996·Granted Dec 17, 1996·37 cites·17 claims
- 2373US6018183AStructure of manufacturing an electrostatic discharge protective circuit for SRAMUNITED MICROELECTRONICS CORP·Filed 1998·Granted Jan 25, 2000·42 cites·14 claims
- 2471US6114226AMethod of manufacturing electrostatic discharge protective circuitUNITED MICROELECTRONICS CORP·Filed 1999·Granted Sep 5, 2000·32 cites·19 claims
- 2569US6150261AMethod of fabricating semiconductor device for preventing antenna effectUNITED MICROELECTRONICS CORP·Filed 1999·Granted Nov 21, 2000·39 cites·11 claims
- 2669US5538909AMethod of making a shallow trench large-angle-tilt implanted drain deviceUNITED MICROELECTRONICS CORP·Filed 1995·Granted Jul 23, 1996·29 cites·15 claims
- 2769US5472894AMethod of fabricating lightly doped drain transistor deviceUNITED MICROELECTRONICS CORP·Filed 1994·Granted Dec 5, 1995·25 cites·7 claims
- 2869US5414351AMethod and apparatus for testing the reliability of semiconductor terminalsUNITED MICROELECTRONICS CORP·Filed 1993·Granted May 9, 1995·32 cites·17 claims
- 2968US5946573ASelf-aligned silicide (salicide) process for electrostatic discharge (ESD) protectionUNITED MICROELECTRONICS CORP·Filed 1997·Granted Aug 31, 1999·28 cites·7 claims
- 3068US5468541AThin film delamination test chipUNITED MICROELECTRONICS CORP·Filed 1993·Granted Nov 21, 1995·40 cites·3 claims
- 3167US6022794AMethod of manufacturing a buried contact in a static random access memoryUNITED MICROELETRONICS CORP·Filed 1998·Granted Feb 8, 2000·26 cites·38 claims
- 3267US5498556AMetal-oxide-semiconductor field-effect transistor and its method of fabricationUNITED MICROELECTRONICS CORP·Filed 1995·Granted Mar 12, 1996·33 cites·9 claims
- 3365US6171954B1Method of manufacturing self-aligned contactUNITED MICROELECTRONICS CORP·Filed 1998·Granted Jan 9, 2001·32 cites·26 claims
- 3465US5903024AStacked and trench type DRAM capacitorUNITED MICROELECTRONICS CORP·Filed 1997·Granted May 11, 1999·20 cites·6 claims
- 3565US5547903AMethod of elimination of junction punchthrough leakage via buried sidewall isolationUNITED MICROELECTRONICS CORP·Filed 1994·Granted Aug 20, 1996·25 cites·22 claims
- 3665US5480823AMethod of making high density ROM, without using a code implantUNITED MICROELECTRONICS CORP·Filed 1995·Granted Jan 2, 1996·21 cites·20 claims
- 3764US5891772AStructure and manufacturing method for DRAM capacitorsUNITED MICROELECTRONICS CORP·Filed 1997·Granted Apr 6, 1999·23 cites·11 claims
- 3864US5633187AProcess for fabricating read-only memory cellsUNITED MICROELECTRONICS CORP·Filed 1995·Granted May 27, 1997·21 cites·17 claims
- 3964US5554544AField edge manufacture of a T-gate LDD pocket deviceUNITED MICROELECTRONICS CORP·Filed 1995·Granted Sep 10, 1996·30 cites·15 claims
- 4063US6477023B1Electrostatic discharge protection apparatusUNITED MICROELECTRONICS CORP·Filed 2000·Granted Nov 5, 2002·10 cites·11 claims
- 4162US6274468B1Method of manufacturing borderless contactUNITED MICROELECTRONICS CORP·Filed 1998·Granted Aug 14, 2001·26 cites·16 claims
- 4262US6236073B1Electrostatic discharge deviceUNITED MICROELECTRONICS CORP·Filed 1999·Granted May 22, 2001·20 cites·13 claims
- 4362US6097235AField device electrostatic discharge protective circuitUNITED MICROELECTRONICS CORP·Filed 1999·Granted Aug 1, 2000·20 cites·16 claims
- 4461US6077770ADamascene manufacturing process capable of forming borderless viaUNITED MICROELECTRONICS CORP·Filed 1998·Granted Jun 20, 2000·26 cites·20 claims
- 4559US6087251AMethod of fabricating a dual damascene structureUNITED MICROELECTRONICS CORP·Filed 1998·Granted Jul 11, 2000·24 cites·19 claims
- 4659US5627087AProcess for fabricating metal-oxide semiconductor (MOS) transistors based on lightly doped drain (LDD) structureUNITED MICROELECTRONICS CORP·Filed 1996·Granted May 6, 1997·19 cites·19 claims
- 4758US6040222AMethod for fabricating an electrostatistic discharge protection device to protect an integrated circuitUNITED MICROELECTRONICS CORP·Filed 1999·Granted Mar 21, 2000·18 cites·8 claims
- 4858US5712203AProcess for fabricating read-only memory cells using removable barrier stripsUNITED MICROELECTRONICS CORP·Filed 1995·Granted Jan 27, 1998·23 cites·8 claims
- 4958US5550075AIon implanted programmable cell for read only memory applicationsUNITED MICROELECTRONICS CORP·Filed 1995·Granted Aug 27, 1996·20 cites·18 claims
- 5057US5616946AVLSI ROM programmed by selective diode formationUNITED MICROELECTRONICS CORP·Filed 1996·Granted Apr 1, 1997·18 cites·4 claims
Showing the top 50 of 100 patent records by PatentIndex Score.
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