Inventor · disambiguated record
Wong-Cheng Shih
Also filed as: SHIH WONG-CHENG
10 granted patents·3 pending applications·324 citations·filing 1998–2010
91Inventor score
Files withTAIWAN SEMICONDUCTOR MFG6APPLIED MATERIALS INC2VANGUARD INT SEMICONDUCT CORP2HSU CHIA-MING1TAIWAN SEMICONDUCTOR MANFACTUR1
Top patents by PatentIndex Score
13 records- 0194US6387761B1Anneal for enhancing the electrical characteristic of semiconductor devicesAPPLIED MATERIALS INC·Filed 2000·Granted May 14, 2002·74 cites·10 claims
- 0293US6436787B1Method of forming crown-type MIM capacitor integrated with the CU damascene processTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Aug 20, 2002·75 cites·29 claims
- 0381US6559497B2Microelectronic capacitor with barrier layerTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted May 6, 2003·31 cites·6 claims
- 0481US6037235AHydrogen anneal for curing defects of silicon/nitride interfaces of semiconductor devicesAPPLIED MATERIALS INC·Filed 1998·Granted Mar 14, 2000·52 cites·23 claims
- 0577US6640403B2Method for forming a dielectric-constant-enchanced capacitorVANGUARD INT SEMICONDUCT CORP·Filed 2001·Granted Nov 4, 2003·21 cites·20 claims
- 0672US6103567AMethod of fabricating dielectric layerVANGUARD INT SEMICONDUCT CORP·Filed 1999·Granted Aug 15, 2000·46 cites·21 claims
- 0768US6656844B1Method of forming a protected crown capacitor structure utilizing the outside crown surface to increase capacitanceTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Dec 2, 2003·12 cites·23 claims
- 0867US6620702B2Method of producing low thermal budget high dielectric constant structuresTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Sep 16, 2003·11 cites·15 claims
- 0944US6456482B1Microelectronic capacitor with capacitor plate layer formed of tungsten rich tungsten oxide materialTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Sep 24, 2002·2 cites·15 claims
- 1040US8269311B2Multilayer oxide on nitride on oxide structure and method for the manufacture of semiconductor devicesHSU CHIA-MING·Filed 2010·Granted Sep 18, 2012·0 cites·10 claims
- 1136US2005132549A1Method for making metal capacitors with low leakage currents for mixed-signal devicesFiled 2004·Application pending·0 cites
- 1235US2003096473A1Method for making metal capacitors with low leakage currents for mixed-signal devicesTAIWAN SEMICONDUCTOR MFG·Filed 2001·Application pending·0 cites
- 1335US2003077882A1Method of forming strained-silicon wafer for mobility-enhanced MOSFET deviceTAIWAN SEMICONDUCTOR MANFACTUR·Filed 2001·Application pending·0 cites
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