Inventor · disambiguated record
Tae-Jong Han
Also filed as: HAN TAE-JONG
8 granted patents·3 pending applications·30 citations·filing 2009–2022
81Inventor score
Top patents by PatentIndex Score
11 records- 0193US11791209B2Method of manufacturing a semiconductor device using a thermally decomposable layer, a semiconductor manufacturing apparatus, and the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 17, 2023·2 cites·18 claims
- 0290US9343475B2Vertical memory devices and methods of manufacturing the sameJANG KYUNG-TAE·Filed 2014·Granted May 17, 2016·19 cites·15 claims
- 0377US11581326B2Three-dimensional semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Feb 14, 2023·1 cites·19 claims
- 0474US9780113B2Method for fabricating semiconductor device including a first ILD with sloped surface on a stacked structure and a second ILD on the first ILDIM JIWOON·Filed 2015·Granted Oct 3, 2017·4 cites·20 claims
- 0563US11482453B2Method of manufacturing a semiconductor device using a thermally decomposable layer, a semiconductor manufacturing apparatus, and the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 25, 2022·0 cites·20 claims
- 0662US8440531B2Methods of forming semiconductor memory devices having vertically stacked memory cells thereinHAN TAE-JONG·Filed 2012·Granted May 14, 2013·3 cites·20 claims
- 0759US8809937B2Semiconductor devices including device isolation structures and method of forming the sameKIM DAEWOONG·Filed 2012·Granted Aug 19, 2014·1 cites·9 claims
- 0853US9159737B2Semiconductor devices including device isolation structures and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Oct 13, 2015·0 cites·10 claims
- 0952US2023307371A1Semiconductor memory device, method for fabricating the same and electronic system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 1046US2010072569A1Method of forming an isolation layer, method of manufacturing a semiconductor device using the same, and semiconductor device having an isolation layerSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 1134US2010230741A1Semiconductor devices with an air gap in trench isolation dielectricSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →