Inventor · disambiguated record
Prahalad K. Vasudev
Also filed as: VASUDEV PRAHALAD · VASUDEV PRAHALAD K
26 granted patents·2 pending applications·5,015 citations·filing 1980–2001
98Inventor score
Files withHUGHES AIRCRAFT CO11SEMATECH INC9CORNELL RES FOUNDATION INC4NAT INSTR CORP1VASUDEV PRAHALAD1
Top patents by PatentIndex Score
28 records- 0198US5891513AElectroless CU deposition on a barrier layer by CU contact displacement for ULSI applicationsCORNELL RES FOUNDATION INC·Filed 1996·Granted Apr 6, 1999·582 cites·25 claims
- 0298US5674787ASelective electroless copper deposited interconnect plugs for ULSI applicationsSEMATECH INC·Filed 1996·Granted Oct 7, 1997·838 cites·32 claims
- 0398US5474865AGlobally planarized binary optical mask using buried absorbersSEMATECH INC·Filed 1994·Granted Dec 12, 1995·163 cites·20 claims
- 0497US6037664ADual damascene interconnect structure using low dielectric constant material for an inter-level dielectric layerSEMATECH INC·Filed 1998·Granted Mar 14, 2000·306 cites·26 claims
- 0597US5830805AElectroless deposition equipment or apparatus and method of performing electroless depositionCORNELL RES FOUNDATION INC·Filed 1996·Granted Nov 3, 1998·358 cites·15 claims
- 0697US5824599AProtected encapsulation of catalytic layer for electroless copper interconnectCORNELL RES FOUNDATION INC·Filed 1996·Granted Oct 20, 1998·561 cites·22 claims
- 0797US5695810AUse of cobalt tungsten phosphide as a barrier material for copper metallizationCORNELL RES FOUNDATION INC·Filed 1996·Granted Dec 9, 1997·833 cites·21 claims
- 0897US4748485AOpposed dual-gate hybrid structure for three-dimensional integrated circuitsHUGHES AIRCRAFT CO·Filed 1987·Granted May 31, 1988·153 cites·11 claims
- 0997US4617066AProcess of making semiconductors having shallow, hyperabrupt doped regions by implantation and two step annealingHUGHES AIRCRAFT CO·Filed 1984·Granted Oct 14, 1986·184 cites·20 claims
- 1096US6100184AMethod of making a dual damascene interconnect structure using low dielectric constant material for an inter-level dielectric layerSEMATECH INC·Filed 1997·Granted Aug 8, 2000·236 cites·12 claims
- 1193US4509990ASolid phase epitaxy and regrowth process with controlled defect density profiling for heteroepitaxial semiconductor on insulator composite substratesHUGHES AIRCRAFT CO·Filed 1982·Granted Apr 9, 1985·96 cites·23 claims
- 1291US5480747AAttenuated phase shifting mask with buried absorbersSEMATECH INC·Filed 1994·Granted Jan 2, 1996·75 cites·26 claims
- 1390US4659392ASelective area double epitaxial process for fabricating silicon-on-insulator structures for use with MOS devices and integrated circuitsHUGHES AIRCRAFT CO·Filed 1986·Granted Apr 21, 1987·96 cites·11 claims
- 1488US5081062AMonolithic integration of silicon on insulator and gallium arsenide semiconductor technologiesVASUDEV PRAHALAD·Filed 1989·Granted Jan 14, 1992·85 cites·12 claims
- 1586US4388633AMonolithic transistor coupled electroluminescent diodeHUGHES AIRCRAFT CO·Filed 1980·Granted Jun 14, 1983·39 cites·17 claims
- 1682US4965872AMOS-enhanced, self-aligned lateral bipolar transistor made of a semiconductor on an insulatorVASUDEV PRAHALAD K·Filed 1988·Granted Oct 23, 1990·46 cites·12 claims
- 1781US5418095AMethod of fabricating phase shifters with absorbing/attenuating sidewalls using an additive processSEMATECH INC·Filed 1994·Granted May 23, 1995·43 cites·16 claims
- 1880US4439910AProcess for fabrication of monolithic transistor coupled electroluminescent diodeHUGHES AIRCRAFT CO·Filed 1982·Granted Apr 3, 1984·31 cites·9 claims
- 1979US5472811APhase shifting mask structure with multilayer optical coating for improved transmissionSEMATECH INC·Filed 1994·Granted Dec 5, 1995·39 cites·14 claims
- 2079US5411824APhase shifting mask structure with absorbing/attenuating sidewalls for improved imagingSEMATECH INC·Filed 1994·Granted May 2, 1995·38 cites·16 claims
- 2176US5027177AFloating base lateral bipolar phototransistor with field effect gate voltage controlHUGHES AIRCRAFT CO·Filed 1989·Granted Jun 25, 1991·32 cites·5 claims
- 2276US4826300ASilicon-on-sapphire liquid crystal light valve and methodHUGHES AIRCRAFT CO·Filed 1987·Granted May 2, 1989·40 cites·21 claims
- 2376US4816893ALow leakage CMOS/insulator substrate devices and method of forming the sameHUGHES AIRCRAFT CO·Filed 1988·Granted Mar 28, 1989·46 cites·17 claims
- 2469US5289027AUltrathin submicron MOSFET with intrinsic channelHUGHES AIRCRAFT CO·Filed 1992·Granted Feb 22, 1994·28 cites·1 claims
- 2567US5660706AElectric field initiated electroless metal depositionSEMATECH INC·Filed 1996·Granted Aug 26, 1997·33 cites·22 claims
- 2667US4753895AMethod of forming low leakage CMOS device on insulating substrateHUGHES AIRCRAFT CO·Filed 1987·Granted Jun 28, 1988·34 cites·18 claims
- 2731US2001033196A1State variable filter including a programmable variable resistorNAT INSTR CORP·Filed 2001·Application pending·0 cites
- 2831US2002111151A1Block downconverter using a SBAR bandpass filter in a superheterodyne receiverFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →