Inventor · disambiguated record
Dirk N. Anderson
Also filed as: ANDERSON DIRK · ANDERSON DIRK N · ANDERSON DIRK NOEL
21 granted patents·1 pending application·710 citations·filing 1984–2005
96Inventor score
Top patents by PatentIndex Score
22 records- 0195US5300447AMethod of manufacturing a minimum scaled transistorTEXAS INSTRUMENTS INC·Filed 1992·Granted Apr 5, 1994·158 cites·8 claims
- 0292US5796151ASemiconductor stack having a dielectric sidewall for prevention of oxidation of tungsten in tungsten capped poly-silicon gate electrodesTEXAS INSTRUMENTS INC·Filed 1996·Granted Aug 18, 1998·112 cites·7 claims
- 0389US6720247B2Pre-pattern surface modification for low-k dielectrics using A H2 plasmaTEXAS INSTRUMENTS INC·Filed 2001·Granted Apr 13, 2004·48 cites·11 claims
- 0487US6380008B2Edge stress reduction by noncoincident layersTEXAS INSTRUMENTS INC·Filed 2000·Granted Apr 30, 2002·39 cites·15 claims
- 0583US6245605B1Method to protect metal from oxidation during poly-metal gate formation in semiconductor device manufacturingTEXAS INSTRUMENTS INC·Filed 1999·Granted Jun 12, 2001·62 cites·15 claims
- 0683US6187656B1CVD-based process for manufacturing stable low-resistivity poly-metal gate electrodesTEXAS INSTRUMENTS INC·Filed 1998·Granted Feb 13, 2001·58 cites·24 claims
- 0781US6159835AEncapsulated low resistance gate structure and method for forming sameTEXAS INSTRUMENTS INC·Filed 2000·Granted Dec 12, 2000·30 cites·2 claims
- 0876US4808552AProcess for making vertically-oriented interconnections for VLSI devicesTEXAS INSTRUMENTS INC·Filed 1987·Granted Feb 28, 1989·49 cites·3 claims
- 0962US4751198AProcess for making contacts and interconnections using direct-reacted silicideTEXAS INSTRUMENTS INC·Filed 1985·Granted Jun 14, 1988·20 cites·9 claims
- 1059US6136700AMethod for enhancing the performance of a contactTEXAS INSTRUMENTS INC·Filed 1997·Granted Oct 24, 2000·24 cites·6 claims
- 1156US6559050B1Process for high thermal stable contact formation in manufacturing sub-quarter-micron CMOS devicesTEXAS INSTRUMENTS INC·Filed 2000·Granted May 6, 2003·7 cites·9 claims
- 1256US4589196AContacts for VLSI devices using direct-reacted silicideTEXAS INSTRUMENTS INC·Filed 1984·Granted May 20, 1986·19 cites·10 claims
- 1349US6373088B2Edge stress reduction by noncoincident layersTEXAS INSTRUMENTS INC·Filed 1998·Granted Apr 16, 2002·10 cites·11 claims
- 1446US6861348B2Pre-pattern surface modification of low-k dielectricsTEXAS INSTRUMENTS INC·Filed 2001·Granted Mar 1, 2005·1 cites·16 claims
- 1546US5112762AHigh angle implant around top of trench to reduce gated diode leakageANDERSON DIRK N·Filed 1990·Granted May 12, 1992·19 cites·12 claims
- 1645US4958206ADiffused bit line trench capacitor dram cellTEXAS INSTRUMENTS INC·Filed 1988·Granted Sep 18, 1990·9 cites·15 claims
- 1745US4922320AIntegrated circuit metallization with reduced electromigrationTEXAS INSTRUMENTS INC·Filed 1988·Granted May 1, 1990·13 cites·7 claims
- 1845US4744858AIntegrated circuit metallization with reduced electromigrationTEXAS INSTRUMENTS INC·Filed 1985·Granted May 17, 1988·13 cites·17 claims
- 1939US2006292885A1Layout modification to eliminate line bending caused by line material shrinkageTEXAS INSTRUMENTS INC·Filed 2005·Application pending·0 cites
- 2037US6033975AImplant screen and methodTEXAS INSTRUMENTS INC·Filed 1997·Granted Mar 7, 2000·6 cites·16 claims
- 2134US5216265AIntegrated circuit memory devices with high angle implant around top of trench to reduce gated diode leakageTEXAS INSTRUMENTS INC·Filed 1991·Granted Jun 1, 1993·10 cites·6 claims
- 2232US6207500B1DRAM chip fabrication methodTEXAS INSTRUMENTS INC·Filed 1998·Granted Mar 27, 2001·3 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →