Inventor · disambiguated record
T. Warren Weeks, Jr.
Also filed as: WEEKS JR T WARREN · WEEKS T W · WEEKS T W JR · WEEKS T WARREN
35 granted patents·8 pending applications·1,263 citations·filing 2000–2021
98Inventor score
Files withHUBBELL INC15NITRONEX CORP8INT RECTIFIER CORP6INFINEON TECHNOLOGIES AMERICAS CORP5CREE INC3
Top patents by PatentIndex Score
43 records- 0199US6649287B2Gallium nitride materials and methodsNITRONEX CORP·Filed 2000·Granted Nov 18, 2003·248 cites·70 claims
- 0299US6617060B2Gallium nitride materials and methodsNITRONEX CORP·Filed 2002·Granted Sep 9, 2003·317 cites·75 claims
- 0398US9064775B2Gallium nitride semiconductor structures with compositionally-graded transition layerINT RECTIFIER CORP·Filed 2014·Granted Jun 23, 2015·29 cites·20 claims
- 0497US8592862B2Gallium nitride semiconductor structures with compositionally-graded transition layerINT RECTIFIER CORP·Filed 2012·Granted Nov 26, 2013·18 cites·20 claims
- 0597US8344417B2Gallium nitride semiconductor structures with compositionally-graded transition layerINT RECTIFIER CORP·Filed 2012·Granted Jan 1, 2013·16 cites·20 claims
- 0697US7364988B2Method of manufacturing gallium nitride based high-electron mobility devicesCREE INC·Filed 2005·Granted Apr 29, 2008·87 cites·21 claims
- 0797US7326971B2Gallium nitride based high-electron mobility devicesCREE INC·Filed 2005·Granted Feb 5, 2008·93 cites·19 claims
- 0897US7233028B2Gallium nitride material devices and methods of forming the sameNITRONEX CORP·Filed 2003·Granted Jun 19, 2007·103 cites·47 claims
- 0997US6611002B2Gallium nitride material devices and methods including backside viasNITRONEX CORP·Filed 2001·Granted Aug 26, 2003·176 cites·51 claims
- 1096US8937335B2Gallium nitride devices with aluminum nitride intermediate layerINT RECTIFIER CORP·Filed 2013·Granted Jan 20, 2015·12 cites·20 claims
- 1196US8928034B2Gallium nitride devices with aluminum nitride alloy intermediate layerINT RECTIFIER CORP·Filed 2013·Granted Jan 6, 2015·11 cites·20 claims
- 1295US9538604B2Current splitter for LED lighting systemHUBBELL INC·Filed 2015·Granted Jan 3, 2017·22 cites·15 claims
- 1395US8928035B2Gallium nitride devices with gallium nitride alloy intermediate layerINT RECTIFIER CORP·Filed 2013·Granted Jan 6, 2015·9 cites·20 claims
- 1494US10177229B2Semiconductor material having a compositionally-graded transition layerINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2016·Granted Jan 8, 2019·5 cites·19 claims
- 1594US9437687B2III-nitride based semiconductor structureINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Granted Sep 6, 2016·5 cites·20 claims
- 1693US8105921B2Gallium nitride materials and methodsWEEKS JR T WARREN·Filed 2008·Granted Jan 31, 2012·18 cites·15 claims
- 1792US10767843B2Antimicrobial light source array systemHUBBELL INC·Filed 2016·Granted Sep 8, 2020·9 cites·20 claims
- 1891US9763298B2Voltage balancing current controlled LED circuitHUBBELL INC·Filed 2015·Granted Sep 12, 2017·13 cites·19 claims
- 1991US9461119B2Semiconductor structure with compositionally-graded transition layerINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2014·Granted Oct 4, 2016·4 cites·17 claims
- 2091US9437686B2Gallium nitride devices with discontinuously graded transition layerINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2014·Granted Sep 6, 2016·4 cites·17 claims
- 2190US10190759B2Circuit boards for LED-based light fixturesHUBBELL INC·Filed 2018·Granted Jan 29, 2019·6 cites·22 claims
- 2285US7485512B2Method of manufacturing an adaptive AIGaN buffer layerCREE INC·Filed 2006·Granted Feb 3, 2009·15 cites·24 claims
- 2384US9970639B2Circuit boards for LED-based light fixturesHUBBELL INC·Filed 2014·Granted May 15, 2018·7 cites·24 claims
- 2483US6956250B2Gallium nitride materials including thermally conductive regionsNITRONEX CORP·Filed 2001·Granted Oct 18, 2005·30 cites·74 claims
- 2582US9907134B2Toggle control for lighting systemHUBBELL INC·Filed 2017·Granted Feb 27, 2018·2 cites·20 claims
- 2675US10051706B2Current splitter for LED lighting systemHUBBELL INC·Filed 2017·Granted Aug 14, 2018·1 cites·20 claims
- 2773US11363688B2Toggle control for lighting systemHUBBELL LIGHTING INC·Filed 2021·Granted Jun 14, 2022·0 cites·20 claims
- 2873US9844112B2Current splitter for LED lighting systemHUBBELL INC·Filed 2016·Granted Dec 12, 2017·1 cites·20 claims
- 2972US9723683B2Current splitter for LED lighting systemHUBBELL INC·Filed 2015·Granted Aug 1, 2017·1 cites·13 claims
- 3071US2020243651A9Gallium nitride materials and methodsMACOM TECH SOLUTIONS HOLDINGS INC·Filed 2018·Application pending·0 cites
- 3171US2019214468A1Gallium nitride materials and methodsMACOM TECH SOLUTIONS HOLDINGS INC·Filed 2018·Application pending·0 cites
- 3268US10912173B2Toggle control for lighting systemHUBBELL INC·Filed 2019·Granted Feb 2, 2021·0 cites·19 claims
- 3367US11333339B2Antimicrobial light source array systemHUBBELL LIGHTING INC·Filed 2020·Granted May 17, 2022·0 cites·19 claims
- 3465US10524324B2LED lighting fixture and adjustment of color temperature thereof based at least in part on detected toggle inputHUBBELL INC·Filed 2019·Granted Dec 31, 2019·0 cites·19 claims
- 3564US10009972B2Multiphase light fixtureHUBBELL INC·Filed 2017·Granted Jun 26, 2018·1 cites·10 claims
- 3664US2016126315A1III-Nitride Semiconductor Structure with Intermediate and Transition LayersINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Application pending·0 cites
- 3762US10187951B2Toggle control for lighting systemHUBBELL INC·Filed 2018·Granted Jan 22, 2019·0 cites·19 claims
- 3851US2007295985A1Gallium nitride material devices and methods of forming the sameNITRONEX CORP·Filed 2007·Application pending·0 cites
- 3946US10317284B2Systems and methods for testing and characterizing LED lighting devicesHUBBELL INC·Filed 2015·Granted Jun 11, 2019·0 cites·18 claims
- 4046US2004119067A1Gallium nitride materials and methodsNITRONEX CORP·Filed 2003·Application pending·0 cites
- 4145US2005127397A1Gallium nitride materials including thermally conductive regionsNITRONEX CORP·Filed 2005·Application pending·0 cites
- 4240US2017164442A1Mercury-Vapor Like LampHUBBELL INC·Filed 2016·Application pending·0 cites
- 4336US2003132433A1Semiconductor structures including a gallium nitride material component and a silicon germanium componentFiled 2002·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →