Inventor · disambiguated record
Chandra S. Mohapatra
Also filed as: MOHAPATRA CHANDRA · MOHAPATRA CHANDRA S
59 granted patents·7 pending applications·73 citations·filing 2013–2023
97Inventor score
Top patents by PatentIndex Score
66 records- 0195US10734412B2Backside contact resistance reduction for semiconductor devices with metallization on both sidesINTEL CORP·Filed 2016·Granted Aug 4, 2020·15 cites·20 claims
- 0292US11610995B2Methods of forming dislocation enhanced strain in NMOS and PMOS structuresDAEDALUS PRIME LLC·Filed 2022·Granted Mar 21, 2023·1 cites·10 claims
- 0392US10211208B2High-mobility semiconductor source/drain spacerINTEL CORP·Filed 2015·Granted Feb 19, 2019·7 cites·21 claims
- 0491US10229997B2Indium-rich NMOS transistor channelsINTEL CORP·Filed 2015·Granted Mar 12, 2019·6 cites·20 claims
- 0590US10446685B2High-electron-mobility transistors with heterojunction dopant diffusion barrierINTEL CORP·Filed 2015·Granted Oct 15, 2019·6 cites·18 claims
- 0688US10373977B2Transistor fin formation via cladding on sacrificial coreINTEL CORP·Filed 2015·Granted Aug 6, 2019·6 cites·20 claims
- 0784US10418464B2Techniques for forming transistors on the same die with varied channel materialsINTEL CORP·Filed 2015·Granted Sep 17, 2019·4 cites·19 claims
- 0883US11444166B2Backside source/drain replacement for semiconductor devices with metallization on both sidesINTEL CORP·Filed 2020·Granted Sep 13, 2022·1 cites·20 claims
- 0983US10651288B2Pseudomorphic InGaAs on GaAs for gate-all-around transistorsINTEL CORP·Filed 2015·Granted May 12, 2020·3 cites·17 claims
- 1083US10411007B2High mobility field effect transistors with a band-offset semiconductor source/drain spacerINTEL CORP·Filed 2015·Granted Sep 10, 2019·3 cites·15 claims
- 1182US2023197848A1Methods of forming dislocation enhanced strain in nmos and pmos structuresDAEDALUS PRIME LLC·Filed 2023·Application pending·0 cites
- 1279US11482618B2Methods of forming dislocation enhanced strain in NMOS and PMOS structuresDAEDALUS PRIME LLC·Filed 2022·Granted Oct 25, 2022·0 cites·13 claims
- 1379US10431690B2High electron mobility transistors with localized sub-fin isolationINTEL CORP·Filed 2015·Granted Oct 1, 2019·3 cites·20 claims
- 1477US10892337B2Backside source/drain replacement for semiconductor devices with metallization on both sidesINTEL CORP·Filed 2016·Granted Jan 12, 2021·2 cites·20 claims
- 1576US11411110B2Methods of forming dislocation enhanced strain in NMOS and PMOS structuresINTEL CORP·Filed 2021·Granted Aug 9, 2022·0 cites·11 claims
- 1676US10573750B2Methods of forming doped source/drain contacts and structures formed therebyINTEL CORP·Filed 2015·Granted Feb 25, 2020·2 cites·21 claims
- 1775US10580865B2Transistor with a sub-fin dielectric region under a gateINTEL CORP·Filed 2015·Granted Mar 3, 2020·2 cites·17 claims
- 1875US10340374B2High mobility field effect transistors with a retrograded semiconductor source/drainINTEL CORP·Filed 2015·Granted Jul 2, 2019·2 cites·13 claims
- 1973US10461082B2Well-based integration of heteroepitaxial N-type transistors with P-type transistorsINTEL CORP·Filed 2015·Granted Oct 29, 2019·2 cites·20 claims
- 2072US10396201B2Methods of forming dislocation enhanced strain in NMOS structuresINTEL CORP·Filed 2013·Granted Aug 27, 2019·1 cites·14 claims
- 2171US11996447B2Field effect transistors with gate electrode self-aligned to semiconductor finINTEL CORP·Filed 2022·Granted May 28, 2024·0 cites·20 claims
- 2268US10957769B2High-mobility field effect transistors with wide bandgap fin claddingINTEL CORP·Filed 2016·Granted Mar 23, 2021·1 cites·20 claims
- 2367US11670682B2FINFET transistor having a doped sub fin structure to reduce channel to substrate leakageTAHOE RES LTD·Filed 2021·Granted Jun 6, 2023·0 cites·14 claims
- 2467US9929273B2Apparatus and methods of forming fin structures with asymmetric profileINTEL CORP·Filed 2014·Granted Mar 27, 2018·1 cites·20 claims
- 2567US2024018688A1Batch processing apparatus, systems, and related methods and structures for epitaxial deposition operationsAPPLIED MATERIALS INC·Filed 2022·Application pending·0 cites
- 2666US10546858B2Low damage self-aligned amphoteric FINFET tip dopingINTEL CORP·Filed 2015·Granted Jan 28, 2020·1 cites·12 claims
- 2766US10529808B2Dopant diffusion barrier for source/drain to curb dopant atom diffusionINTEL CORP·Filed 2016·Granted Jan 7, 2020·1 cites·21 claims
- 2866US10483353B2Transistor including tensile-strained germanium channelINTEL CORP·Filed 2015·Granted Nov 19, 2019·1 cites·19 claims
- 2966US10403752B2Prevention of subchannel leakage current in a semiconductor device with a fin structureINTEL CORP·Filed 2014·Granted Sep 3, 2019·1 cites·18 claims
- 3065US12467144B2Methods of correlating zones of processing chambers, and related systems and methodsAPPLIED MATERIALS INC·Filed 2022·Granted Nov 11, 2025·0 cites·13 claims
- 3165US11107920B2Methods of forming dislocation enhanced strain in NMOS structuresINTEL CORP·Filed 2019·Granted Aug 31, 2021·0 cites·10 claims
- 3265US10084043B2High mobility nanowire fin channel on silicon substrate formed using sacrificial sub-finINTEL CORP·Filed 2014·Granted Sep 25, 2018·1 cites·21 claims
- 3361US10818793B2Indium-rich NMOS transistor channelsINTEL CORP·Filed 2019·Granted Oct 27, 2020·0 cites·20 claims
- 3460US11004978B2Methods of forming doped source/drain contacts and structures formed therebyINTEL CORP·Filed 2020·Granted May 11, 2021·0 cites·19 claims
- 3557US11417655B2High-mobility semiconductor source/drain spacerINTEL CORP·Filed 2019·Granted Aug 16, 2022·0 cites·6 claims
- 3653US10586848B2Apparatus and methods to create an active channel having indium rich side and bottom surfacesINTEL CORP·Filed 2016·Granted Mar 10, 2020·0 cites·15 claims
- 3752US11276755B2Field effect transistors with gate electrode self-aligned to semiconductor finINTEL CORP·Filed 2016·Granted Mar 15, 2022·0 cites·11 claims
- 3852US11107890B2FINFET transistor having a doped subfin structure to reduce channel to substrate leakageINTEL CORP·Filed 2016·Granted Aug 31, 2021·0 cites·14 claims
- 3951US10497814B2III-V semiconductor alloys for use in the subfin of non-planar semiconductor devices and methods of forming the sameINTEL CORP·Filed 2014·Granted Dec 3, 2019·0 cites·15 claims
- 4050US10903364B2Semiconductor device with released source and drainINTEL CORP·Filed 2016·Granted Jan 26, 2021·0 cites·10 claims
- 4150US10290709B2Apparatus and methods to create an indium gallium arsenide active channel having indium rich surfacesINTEL CORP·Filed 2014·Granted May 14, 2019·0 cites·19 claims
- 4249US10243078B2Carrier confinement for high mobility channel devicesINTEL CORP·Filed 2014·Granted Mar 26, 2019·0 cites·25 claims
- 4349US2017278944A1Apparatus and methods to create a doped sub-structure to reduce leakage in microelectronic transistorsINTEL CORP·Filed 2014·Application pending·0 cites
- 4448US10944006B2Geometry tuning of fin based transistorINTEL CORP·Filed 2016·Granted Mar 9, 2021·0 cites·21 claims
- 4547US11631737B2Ingaas epi structure and wet etch process for enabling III-v GAA in art trenchINTEL CORP·Filed 2014·Granted Apr 18, 2023·0 cites·16 claims
- 4647US10636912B2FINFET transistor having a tapered subfin structureINTEL CORP·Filed 2016·Granted Apr 28, 2020·0 cites·23 claims
- 4747US10559689B2Crystallized silicon carbon replacement material for NMOS source/drain regionsINTEL CORP·Filed 2015·Granted Feb 11, 2020·0 cites·18 claims
- 4847US10559683B2Apparatus and methods to create a buffer to reduce leakage in microelectronic transistorsINTEL CORP·Filed 2014·Granted Feb 11, 2020·0 cites·13 claims
- 4947US9842928B2Tensile source drain III-V transistors for mobility improved n-MOSINTEL CORP·Filed 2013·Granted Dec 12, 2017·0 cites·11 claims
- 5046US10388764B2High-electron-mobility transistors with counter-doped dopant diffusion barrierINTEL CORP·Filed 2015·Granted Aug 20, 2019·0 cites·15 claims
Showing the top 50 of 66 patent records by PatentIndex Score.
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