Inventor · disambiguated record
Katsuya Miura
Also filed as: MIURA KATSUYA
25 granted patents·3 pending applications·101 citations·filing 2000–2023
94Inventor score
Top patents by PatentIndex Score
28 records- 0185US11276816B2Method of manufacturing magnetic tunnel junction and magnetic tunnel junctionHITACHI HIGH TECH CORP·Filed 2019·Granted Mar 15, 2022·3 cites·2 claims
- 0285US8917541B2Magnetoresistance effect element and magnetic memoryOHNO HIDEO·Filed 2011·Granted Dec 23, 2014·7 cites·34 claims
- 0382US6360142B1Random work arranging deviceKAWASAKI HEAVY IND LTD·Filed 2000·Granted Mar 19, 2002·39 cites·25 claims
- 0479US9564152B2Magnetoresistance effect element and magnetic memoryUNIV TOHOKU·Filed 2014·Granted Feb 7, 2017·4 cites·15 claims
- 0576US7872906B2Unidirectional-current magnetization-reversal magnetoresistance element and magnetic recording apparatusHITACHI LTD·Filed 2008·Granted Jan 18, 2011·7 cites·20 claims
- 0674US7755932B2Spin torque magnetic memory and offset magnetic field correcting method thereofHITACHI LTD·Filed 2008·Granted Jul 13, 2010·12 cites·15 claims
- 0773US10488270B2Platinum temperature sensor elementKOA CORP·Filed 2017·Granted Nov 26, 2019·2 cites·4 claims
- 0873US9153306B2Tunnel magnetoresistive effect element and random access memory using sameOHNO HIDEO·Filed 2011·Granted Oct 6, 2015·5 cites·15 claims
- 0972US9135973B2Magnetoresistance effect element and magnetic memoryOHNO HIDEO·Filed 2011·Granted Sep 15, 2015·5 cites·19 claims
- 1071US9450177B2Magnetoresistive element and magnetic memoryOHNO HIDEO·Filed 2011·Granted Sep 20, 2016·4 cites·13 claims
- 1170US10804457B2Magnetoresistive element and magnetic memoryUNIV TOHOKU·Filed 2016·Granted Oct 13, 2020·1 cites·20 claims
- 1269US12432860B2Electronic deviceTDK CORP·Filed 2023·Granted Sep 30, 2025·0 cites·14 claims
- 1369US11678583B2Method of manufacturing magnetic tunnel junction and magnetic tunnel junctionHITACHI HIGH TECH CORP·Filed 2022·Granted Jun 13, 2023·0 cites·2 claims
- 1462US9602103B2Spin wave device and logic circuit using spin wave deviceHITACHI LTD·Filed 2013·Granted Mar 21, 2017·2 cites·15 claims
- 1558US9070457B2Magnetic tunnel junctions with perpendicular magnetization and magnetic random access memoryOHNO HIDEO·Filed 2012·Granted Jun 30, 2015·2 cites·12 claims
- 1657US12264954B2Flow sensor elementKOA CORP·Filed 2021·Granted Apr 1, 2025·0 cites·3 claims
- 1756US8837209B2Magnetic memory cell and magnetic random access memoryOHNO HIDEO·Filed 2011·Granted Sep 16, 2014·2 cites·20 claims
- 1854US8957486B2Magnetic memoryITO KENCHI·Filed 2009·Granted Feb 17, 2015·4 cites·8 claims
- 1951US8409074B2Sleeping state improvement system and sleeping state improvement methodARAI JUNICHIRO·Filed 2005·Granted Apr 2, 2013·2 cites·17 claims
- 2048US11131586B2Temperature sensor elementKOA CORP·Filed 2018·Granted Sep 28, 2021·0 cites·4 claims
- 2148US7613036B2Memory element utilizing magnetization switching caused by spin accumulation and spin RAM device using the memory elementHITACHI LTD·Filed 2008·Granted Nov 3, 2009·0 cites·12 claims
- 2248US2023161246A1Resist underlayer film-forming compositionNISSAN CHEMICAL CORP·Filed 2021·Application pending·0 cites
- 2346US11164906B2Magnetic tunnel junction element, magnetic memory using the same, and manufacture method of magnetic tunnel junction elementHITACHI HIGH TECH CORP·Filed 2019·Granted Nov 2, 2021·0 cites·17 claims
- 2446US10651369B2Magnetoresistive element and magnetic memoryUNIV TOHOKU·Filed 2016·Granted May 12, 2020·0 cites·14 claims
- 2546US2024247960A1Sensor elementKOA CORP·Filed 2022·Application pending·0 cites
- 2644US2016202330A1Magnetic sensor elementHITACHI LTD·Filed 2013·Application pending·0 cites
- 2743US10336609B2Microstructure processing method and microstructure processing apparatusHITACHI LTD·Filed 2017·Granted Jul 2, 2019·0 cites·10 claims
- 2835US11165015B2Magnetic tunnel junction device, magnetoresistive random access memory using same and manufacturing method of magnetic tunnel junction deviceHITACHI HIGH TECH CORP·Filed 2018·Granted Nov 2, 2021·0 cites·10 claims
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