Assignee
OHNO HIDEO
JP·10 granted patents·1 pending application·33 citations·filing 2005–2012
Top patents by PatentIndex Score
11 records- 0185US8917541B2Magnetoresistance effect element and magnetic memoryOHNO HIDEO·Filed 2011·Granted Dec 23, 2014·7 cites·34 claims
- 0273US9153306B2Tunnel magnetoresistive effect element and random access memory using sameOHNO HIDEO·Filed 2011·Granted Oct 6, 2015·5 cites·15 claims
- 0372US9135973B2Magnetoresistance effect element and magnetic memoryOHNO HIDEO·Filed 2011·Granted Sep 15, 2015·5 cites·19 claims
- 0471US9450177B2Magnetoresistive element and magnetic memoryOHNO HIDEO·Filed 2011·Granted Sep 20, 2016·4 cites·13 claims
- 0570US8274818B2Magnetoresistive element, magnetic memory cell and magnetic random access memory using the sameOHNO HIDEO·Filed 2008·Granted Sep 25, 2012·7 cites·24 claims
- 0658US9070457B2Magnetic tunnel junctions with perpendicular magnetization and magnetic random access memoryOHNO HIDEO·Filed 2012·Granted Jun 30, 2015·2 cites·12 claims
- 0756US8837209B2Magnetic memory cell and magnetic random access memoryOHNO HIDEO·Filed 2011·Granted Sep 16, 2014·2 cites·20 claims
- 0847US8310867B2Nonvolatile solid state magnetic memory and recording method thereofOHNO HIDEO·Filed 2008·Granted Nov 13, 2012·0 cites·11 claims
- 0943US8331140B2Current injection magnetic domain wall moving elementOHNO HIDEO·Filed 2005·Granted Dec 11, 2012·1 cites·21 claims
- 1038US8217477B2Magnetic memory cell and magnetic random access memoryOHNO HIDEO·Filed 2008·Granted Jul 10, 2012·0 cites·9 claims
- 1136US2013107616A1Magnetoresistive effect element and random access memory using sameOHNO HIDEO·Filed 2010·Application pending·0 cites
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