Inventor · disambiguated record
Fumihiro Matsukura
Also filed as: MATSUKURA FUMIHIRO
17 granted patents·2 pending applications·48 citations·filing 2001–2018
91Inventor score
Top patents by PatentIndex Score
19 records- 0185US8917541B2Magnetoresistance effect element and magnetic memoryOHNO HIDEO·Filed 2011·Granted Dec 23, 2014·7 cites·34 claims
- 0279US9564152B2Magnetoresistance effect element and magnetic memoryUNIV TOHOKU·Filed 2014·Granted Feb 7, 2017·4 cites·15 claims
- 0378US10164174B2Magnetoresistance effect element and magnetic memoryUNIV TOHOKU·Filed 2018·Granted Dec 25, 2018·1 cites·25 claims
- 0474US9202545B2Magnetoresistance effect element and magnetic memoryUNIV TOHOKU·Filed 2013·Granted Dec 1, 2015·5 cites·12 claims
- 0572US9135973B2Magnetoresistance effect element and magnetic memoryOHNO HIDEO·Filed 2011·Granted Sep 15, 2015·5 cites·19 claims
- 0671US9450177B2Magnetoresistive element and magnetic memoryOHNO HIDEO·Filed 2011·Granted Sep 20, 2016·4 cites·13 claims
- 0771US6482729B2Method of generating spin-polarized conduction electron and semiconductor deviceUNIV TOHOKU·Filed 2001·Granted Nov 19, 2002·17 cites·7 claims
- 0870US10804457B2Magnetoresistive element and magnetic memoryUNIV TOHOKU·Filed 2016·Granted Oct 13, 2020·1 cites·20 claims
- 0965US11563169B2Magnetic tunnel junction element and magnetic memoryUNIV TOHOKU·Filed 2016·Granted Jan 24, 2023·2 cites·11 claims
- 1065US10658572B2Magnetoresistance effect element and magnetic memoryUNIV TOHOKU·Filed 2018·Granted May 19, 2020·0 cites·14 claims
- 1152US6861342B2Zinc blende type CrSb compound, method for fabricating the same, and multilayered structureUNIV TOHOKU·Filed 2002·Granted Mar 1, 2005·1 cites·18 claims
- 1250US9577182B2Magnetoresistance effect element and magnetic memoryUNIV TOHOKU·Filed 2014·Granted Feb 21, 2017·0 cites·10 claims
- 1347US8310867B2Nonvolatile solid state magnetic memory and recording method thereofOHNO HIDEO·Filed 2008·Granted Nov 13, 2012·0 cites·11 claims
- 1446US10651369B2Magnetoresistive element and magnetic memoryUNIV TOHOKU·Filed 2016·Granted May 12, 2020·0 cites·14 claims
- 1543US8331140B2Current injection magnetic domain wall moving elementOHNO HIDEO·Filed 2005·Granted Dec 11, 2012·1 cites·21 claims
- 1638US10127957B2Control method for magnetoresistance effect element and control device for magnetoresistance effect elementUNIV TOHOKU·Filed 2014·Granted Nov 13, 2018·0 cites·20 claims
- 1737US10263180B2Magnetoresistance effect element and magnetic memoryUNIV TOHOKU·Filed 2017·Granted Apr 16, 2019·0 cites·15 claims
- 1830US2004085827A1Nonvolatile solid-state magnetic memory, method for controlling coercive force of nonvolatile solid-state magnetic memory, and method for recording in nonvolatile solid-state magnetic memoryUNIV TOHOKU·Filed 2003·Application pending·0 cites
- 1930US2004085811A1Method for recording in a nonvolatile solid-state magnetic memoryUNIV TOHOKU·Filed 2003·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →