Inventor · disambiguated record
Markus Kirchhoff
Also filed as: KIRCHHOFF MARKUS · KIRCHHOFF MARKUS M
16 granted patents·3 pending applications·506 citations·filing 1996–2005
94Inventor score
Top patents by PatentIndex Score
19 records- 0196US5807792AUniform distribution of reactants in a device layerSIEMENS AG·Filed 1996·Granted Sep 15, 1998·236 cites·28 claims
- 0294US6673693B2Method for forming a trench in a semiconductor substrateINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jan 6, 2004·92 cites·4 claims
- 0394US6483172B1Semiconductor device structure with hydrogen-rich layer for facilitating passivation of surface statesSIEMENS AG·Filed 2000·Granted Nov 19, 2002·90 cites·11 claims
- 0479US7141507B2Method for production of a semiconductor structureINFINEON TECHNOLOGIES AG·Filed 2005·Granted Nov 28, 2006·9 cites·14 claims
- 0566US6677218B2Method for filling trenches in integrated semiconductor circuitsINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jan 13, 2004·10 cites·27 claims
- 0661US7078313B2Method for fabricating an integrated semiconductor circuit to prevent formation of voidsINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jul 18, 2006·10 cites·6 claims
- 0756US7368390B2Photolithographic patterning process using a carbon hard mask layer of diamond-like hardness produced by a plasma-enhanced deposition processINFINEON TECHNOLOGIES AG·Filed 2002·Granted May 6, 2008·6 cites·10 claims
- 0856US6759323B2Method for filling depressions in a surface of a semiconductor structure, and a semiconductor structure filled in this wayINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jul 6, 2004·5 cites·9 claims
- 0952US6713364B2Method for forming an insulator having a low dielectric constant on a semiconductor substrateINFINEON TECHNOLOGIES AG·Filed 2001·Granted Mar 30, 2004·5 cites·4 claims
- 1051US6562734B2Method of filling gaps on a semiconductor waferSEMICONDUCTOR 300 GMBH & CO KG·Filed 2001·Granted May 13, 2003·3 cites·7 claims
- 1149US6057250ALow temperature reflow dielectric-fluorinated BPSGIBM·Filed 1998·Granted May 2, 2000·16 cites·7 claims
- 1244US6380076B2Dielectric filling of electrical wiring planesINFINEON TECHNOLOGIES AG·Filed 2000·Granted Apr 30, 2002·1 cites·15 claims
- 1341US6096654AGapfill of semiconductor structure using doped silicate glassesSIEMENS AG·Filed 1997·Granted Aug 1, 2000·8 cites·9 claims
- 1440US6048475AGapfill of semiconductor structure using doped silicate glassesSIEMENS AG·Filed 1999·Granted Apr 11, 2000·7 cites·9 claims
- 1537US2005148193A1Photolithographic method for forming a structure in a semiconductor substrateINFINEON TECHNOLOGIES AG·Filed 2002·Application pending·0 cites
- 1636US5866485ATechniques for etching a silicon dioxide-containing layerSIEMENS AG·Filed 1997·Granted Feb 2, 1999·8 cites·24 claims
- 1736US2002137333A1Method for fabricating an integrated circuit with a dynamic memory cell configuration (DRAM) with a long retention timeFiled 2002·Application pending·0 cites
- 1836US2003087506A1Method of filling substrate depressions with silicon oxide by high-density-plasma vapor phase deposition with participation of H2O2 or H2O as reaction gasKIRCHHOFF MARKUS·Filed 2002·Application pending·0 cites
- 1932US6380074B1Deposition of various base layers for selective layer growth in semiconductor productionINFINEON TECHNOLOGIES AG·Filed 2000·Granted Apr 30, 2002·0 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →