Inventor · disambiguated record
Kouhei Miura
Also filed as: MIURA KOUHEI
9 granted patents·2 pending applications·47 citations·filing 2004–2010
85Inventor score
Top patents by PatentIndex Score
11 records- 0192US7884393B2High electron mobility transistor, field-effect transistor, and epitaxial substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Granted Feb 8, 2011·14 cites·4 claims
- 0284US7763892B2Group III nitride semiconductor device and epitaxial substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted Jul 27, 2010·12 cites·1 claims
- 0381US8642943B2Semiconductor wafer, light-receiving element, light-receiving element array, hybrid-type detection device, optical sensor device, and process for production of semiconductor waferMORI HIROKI·Filed 2010·Granted Feb 4, 2014·4 cites·16 claims
- 0478US7749828B2Method of manufacturing group III Nitride TransistorSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted Jul 6, 2010·5 cites·9 claims
- 0574US7872285B2Vertical gallium nitride semiconductor device and epitaxial substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted Jan 18, 2011·6 cites·22 claims
- 0671US7875906B2Photodetector and production method thereofSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Granted Jan 25, 2011·2 cites·8 claims
- 0759US8969851B2Detection device, photodiode array, and method for manufacturing the sameINADA HIROSHI·Filed 2010·Granted Mar 3, 2015·1 cites·15 claims
- 0852US7387678B2GaN substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2004·Granted Jun 17, 2008·3 cites·34 claims
- 0946US2009057721A1Semiconductor device, epitaxial wafer, and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Application pending·0 cites
- 1041US2008265258A1Group III Nitride Semiconductor Device and Epitaxial SubstrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Application pending·0 cites
- 1136US8410524B2Group III nitride semiconductor device and epitaxial substrateTANABE TATSUYA·Filed 2006·Granted Apr 2, 2013·0 cites·2 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →