Inventor · disambiguated record
Brian Edward Hornung
Also filed as: HORNUNG BRIAN · HORNUNG BRIAN E · HORNUNG BRIAN EDWARD
9 granted patents·8 pending applications·31 citations·filing 2004–2024
82Inventor score
Top patents by PatentIndex Score
17 records- 0189US7098099B1Semiconductor device having optimized shallow junction geometries and method for fabrication thereofTEXAS INSTRUMENTS INC·Filed 2005·Granted Aug 29, 2006·20 cites·18 claims
- 0278US8753944B2Pocket counterdoping for gate-edge diode leakage reductionTEXAS INSTRUMENTS INC·Filed 2013·Granted Jun 17, 2014·4 cites·20 claims
- 0378US2025048724A1Semiconductor device with diffusion suppression and ldd implants and an embedded non-ldd semiconductor deviceTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 0476US12154901B2Semiconductor device with diffusion suppression and LDD implants and an embedded non-LDD semiconductor deviceTEXAS INSTRUMENTS INC·Filed 2023·Granted Nov 26, 2024·0 cites·23 claims
- 0567US11616058B2Semiconductor device with diffusion suppression and LDD implants and an embedded non-LDD semiconductor deviceTEXAS INSTRUMENTS INC·Filed 2020·Granted Mar 28, 2023·0 cites·22 claims
- 0665US9245755B2Deep collector vertical bipolar transistor with enhanced gainTEXAS INSTRUMENTS INC·Filed 2014·Granted Jan 26, 2016·1 cites·13 claims
- 0760US12009423B2Two-rotation gate-edge diode leakage reduction for MOS transistorsTEXAS INSTRUMENTS INC·Filed 2020·Granted Jun 11, 2024·0 cites·17 claims
- 0853US7033879B2Semiconductor device having optimized shallow junction geometries and method for fabrication thereofTEXAS INSTRUMENTS INC·Filed 2004·Granted Apr 25, 2006·6 cites·13 claims
- 0950US9397164B2Deep collector vertical bipolar transistor with enhanced gainTEXAS INSTRUMENTS INC·Filed 2015·Granted Jul 19, 2016·0 cites·5 claims
- 1048US11205575B2Method for stripping one or more layers from a semiconductor waferTEXAS INSTRUMENTS INC·Filed 2019·Granted Dec 21, 2021·0 cites·17 claims
- 1148US2010032813A1Ic formed with densified chemical oxide layerTEXAS INSTRUMENTS INC·Filed 2009·Application pending·0 cites
- 1245US2009170259A1Angled implants with different characteristics on different axesTEXAS INSTRUMENTS INC·Filed 2008·Application pending·0 cites
- 1344US2021193467A1Through-gate co-implant species to control dopant profile in transistorsTEXAS INSTRUMENTS INC·Filed 2020·Application pending·0 cites
- 1443US2006154411A1CMOS transistors and methods of forming sameBU HAOWEN·Filed 2006·Application pending·0 cites
- 1542US2006001105A1Semiconductor device having optimized shallow junction geometries and method for fabrication thereofHORNUNG BRIAN E·Filed 2005·Application pending·0 cites
- 1639US2006292885A1Layout modification to eliminate line bending caused by line material shrinkageTEXAS INSTRUMENTS INC·Filed 2005·Application pending·0 cites
- 1738US2005059260A1CMOS transistors and methods of forming sameFiled 2004·Application pending·0 cites
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