Inventor · disambiguated record
Andrej Litwin
Also filed as: LITWIN ANDREJ
22 granted patents·5 pending applications·356 citations·filing 1994–2006
96Inventor score
Files withERICSSON TELEFON AB L M14INFINEON TECHNOLOGIES AG6BTG INT LTD1INFINEON TECHNOLGOIES AG1PETTERSSON OLA1
Top patents by PatentIndex Score
27 records- 0189US6100770AMIS transistor varactor device and oscillator using sameERICSSON TELEFON AB L M·Filed 1998·Granted Aug 8, 2000·79 cites·34 claims
- 0287US6818959B2MEMS devices with voltage driven flexible elementsBTG INT LTD·Filed 2002·Granted Nov 16, 2004·75 cites·68 claims
- 0386US6686233B2Integration of high voltage self-aligned MOS componentsERICSSON TELEFON AB L M·Filed 2001·Granted Feb 3, 2004·42 cites·29 claims
- 0476US6507047B2Power transistors for radio frequenciesERICSSON TELEFON AB L M·Filed 2001·Granted Jan 14, 2003·22 cites·9 claims
- 0562US7227730B2Device for ESD protection of an integrated circuitINFINEON TECHNOLGOIES AG·Filed 2005·Granted Jun 5, 2007·3 cites·20 claims
- 0659US5659190ASemiconductor device in a thin active layer with high breakdown voltageERICSSON TELEFON AB L M·Filed 1996·Granted Aug 19, 1997·20 cites·5 claims
- 0757US7019382B2Arrangement for ESD protection of an integrated circuitINFINEON TECHNOLOGIES AG·Filed 2004·Granted Mar 28, 2006·7 cites·12 claims
- 0854US7164567B2Device for ESD protection of an integrated circuitINFINEON TECHNOLOGIES AG·Filed 2004·Granted Jan 16, 2007·6 cites·18 claims
- 0953US7098741B2Monolithically integrated power amplifier deviceINFINEON TECHNOLOGIES AG·Filed 2004·Granted Aug 29, 2006·7 cites·18 claims
- 1052US6475926B2Substrate for high frequency integrated circuitsERICSSON TELEFON AB L M·Filed 2000·Granted Nov 5, 2002·4 cites·14 claims
- 1152US6365918B1Method and device for interconnected radio frequency power SiC field effect transistorsERICSSON TELEFON AB L M·Filed 1999·Granted Apr 2, 2002·17 cites·9 claims
- 1252US5886384ASemiconductor component with linear current to voltage characteristicsTELEFONAKITEBOLAGET LM ERICSSO·Filed 1997·Granted Mar 23, 1999·14 cites·7 claims
- 1350US6291859B1Integrated circuitsERICSSON TELEFON AB L M·Filed 1999·Granted Sep 18, 2001·16 cites·11 claims
- 1448US5432377ADielectrically isolated semiconductor device and a method for its manufactureERICSSON TELEFON AB L M·Filed 1994·Granted Jul 11, 1995·10 cites·5 claims
- 1545US6319848B1Inhomogenous composite doped film for low temperature reflowTEXAS INSTRUMENTS INC·Filed 1995·Granted Nov 20, 2001·14 cites·3 claims
- 1644US6514799B2Method for substrate noise distributionERICSSON TELEFON AB L M·Filed 2001·Granted Feb 4, 2003·5 cites·7 claims
- 1743US6973290B2Radio architectureERICSSON TELEFON AB L M·Filed 2003·Granted Dec 6, 2005·0 cites·14 claims
- 1841US6611680B2Radio architectureERICSSON TELEFON AB L M·Filed 1998·Granted Aug 26, 2003·7 cites·19 claims
- 1940US2005067653A1Vertical DMOS transistor device, integrated circuit, and fabrication method thereofFiled 2004·Application pending·0 cites
- 2040US2005112822A1Method in the fabrication of a monolithically integrated high frequency circuitFiled 2004·Application pending·0 cites
- 2139US7379727B2RF front-end receiverINFINEON TECHNOLOGIES AG·Filed 2005·Granted May 27, 2008·0 cites·12 claims
- 2238US2005212048A1Integrated switch deviceINFINEON TECHNOLOGIES AG·Filed 2005·Application pending·0 cites
- 2337US6183857B1Substrate for high frequency integrated circuitsERICSSON TELEFON AB L M·Filed 1998·Granted Feb 6, 2001·5 cites·10 claims
- 2437US2005077578A1Arrangement for reducing current density in transistor in an ICINFINEON TECHNOLOGIES AG·Filed 2004·Application pending·0 cites
- 2534US5741723ADielectrically isolated semiconductor device and a method for its manufactureERICSSON TELEFON AB L M·Filed 1995·Granted Apr 21, 1998·3 cites·3 claims
- 2630US6043555ABipolar silicon-on-insulator transistor with increased breakdown voltageERICSSON TELEFON AB L M·Filed 1997·Granted Mar 28, 2000·0 cites·4 claims
- 2729US2007075784A1Radio frequency power amplifierPETTERSSON OLA·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →