Inventor · disambiguated record
Martin Revitz
Also filed as: REVITZ MARTIN
12 granted patents·386 citations·filing 1978–1994
93Inventor score
Top patents by PatentIndex Score
12 records- 0190US5656514AMethod for making heterojunction bipolar transistor with self-aligned retrograde emitter profileIBM·Filed 1994·Granted Aug 12, 1997·96 cites·8 claims
- 0287US5008207AMethod of fabricating a narrow base transistorIBM·Filed 1989·Granted Apr 16, 1991·57 cites·33 claims
- 0385US4354309AMethod of manufacturing a metal-insulator-semiconductor device utilizing a graded deposition of polycrystalline siliconIBM·Filed 1980·Granted Oct 19, 1982·63 cites·6 claims
- 0483US4249968AMethod of manufacturing a metal-insulator-semiconductor utilizing a multiple stage deposition of polycrystalline layersIBM·Filed 1978·Granted Feb 10, 1981·43 cites·13 claims
- 0576US4341009AMethod for making an electrical contact to a silicon substrate through a relatively thin layer of silicon dioxide on the surface of the substrateIBM·Filed 1980·Granted Jul 27, 1982·32 cites·11 claims
- 0675US4191603AMaking semiconductor structure with improved phosphosilicate glass isolationIBM·Filed 1978·Granted Mar 4, 1980·29 cites·6 claims
- 0765US4667395AMethod for passivating an undercut in semiconductor device preparationIBM·Filed 1985·Granted May 26, 1987·31 cites·14 claims
- 0853US4394406ADouble polysilicon contact structure and processIBM·Filed 1980·Granted Jul 19, 1983·18 cites·1 claims
- 0935US5132765ANarrow base transistor and method of fabricating sameBLOUSE JEFFREY L·Filed 1991·Granted Jul 21, 1992·8 cites·12 claims
- 1032US4701998AMethod for fabricating a bipolar transistorIBM·Filed 1985·Granted Oct 27, 1987·5 cites·6 claims
- 1130US5385850AMethod of forming a doped region in a semiconductor substrate utilizing a sacrificial epitaxial silicon layerIBM·Filed 1991·Granted Jan 31, 1995·3 cites·9 claims
- 1228US4437108ADouble polysilicon contact structureIBM·Filed 1982·Granted Mar 13, 1984·1 cites·1 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →