Inventor · disambiguated record
Zachary K. Lee
Also filed as: LEE ZACHARY · LEE ZACHARY K · LEE ZACHARY K F · LEE ZACHARY KA FAI
27 granted patents·3 pending applications·353 citations·filing 1991–2024
95Inventor score
Top patents by PatentIndex Score
30 records- 0195US9397180B1Low resistance sinker contactTEXAS INSTRUMENTS INC·Filed 2015·Granted Jul 19, 2016·14 cites·11 claims
- 0295US7109532B1High Ion/Ioff SOI MOSFET using body voltage controlLEE ZACHARY K·Filed 2003·Granted Sep 19, 2006·125 cites·14 claims
- 0391US6944051B1Data restore in thryistor based memory devicesT RAM INC·Filed 2003·Granted Sep 13, 2005·50 cites·19 claims
- 0490US7195959B1Thyristor-based semiconductor device and method of fabricationT RAM SEMICONDUCTOR INC·Filed 2004·Granted Mar 27, 2007·50 cites·24 claims
- 0587US5150436ASlow-wave electrode structureUNIV BRITISH COLUMBIA·Filed 1991·Granted Sep 22, 1992·47 cites·21 claims
- 0683US7489008B1High Ion/Ioff SOI MOSFET using body voltage controlT RAM SEMICONDUCTOR INC·Filed 2006·Granted Feb 10, 2009·8 cites·9 claims
- 0782US8921173B2Deep silicon via as a drain sinker in integrated vertical DMOS transistorLEVIN SHARON·Filed 2012·Granted Dec 30, 2014·7 cites·6 claims
- 0882US7245525B1Data restore in thryistor based memory devicesT RAM SEMICONDUCTOR INC·Filed 2005·Granted Jul 17, 2007·12 cites·14 claims
- 0980US12317519B2Contaminant collection on SOITEXAS INSTRUMENTS INC·Filed 2024·Granted May 27, 2025·0 cites·24 claims
- 1080US9728632B2Deep silicon via as a drain sinker in integrated vertical DMOS transistorTOWER SEMICONDUCTOR LTD·Filed 2014·Granted Aug 8, 2017·3 cites·9 claims
- 1178US9991350B2Low resistance sinker contactTEXAS INSTRUMENTS INC·Filed 2016·Granted Jun 5, 2018·2 cites·20 claims
- 1277US12294032B2Segmented Schottky diodeTEXAS INSTRUMENTS INC·Filed 2024·Granted May 6, 2025·0 cites·20 claims
- 1377US9905688B2SOI power LDMOS deviceTEXAS INSTRUMENTS INC·Filed 2016·Granted Feb 27, 2018·2 cites·9 claims
- 1471US11901462B2Contaminant collection on SOITEXAS INSTRUMENTS INC·Filed 2022·Granted Feb 13, 2024·0 cites·37 claims
- 1565US11916152B2Segmented Schottky diodeTEXAS INSTRUMENTS INC·Filed 2020·Granted Feb 27, 2024·0 cites·21 claims
- 1658US5640021AFaraday-stark magneto-optoelectronic (MOE) devicesMASSACHUSETTS INST TECHNOLOGY·Filed 1995·Granted Jun 17, 1997·33 cites·20 claims
- 1756US2024405018A1Field-plated resistorTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 1855US11404556B2FET using trench isolation as the gate dielectricTEXAS INSTRUMENTS INC·Filed 2020·Granted Aug 2, 2022·0 cites·22 claims
- 1955US9831336B2Process for forming a short channel trench MOSFET and device formed therebyVISHAY SILICONIX·Filed 2014·Granted Nov 28, 2017·0 cites·20 claims
- 2055US7859011B2High ion/Ioff SOI MOSFET using body voltage controlT RAM SEMICONDUCTOR INC·Filed 2009·Granted Dec 28, 2010·0 cites·6 claims
- 2154US10319809B2Structures to avoid floating resurf layer in high voltage lateral devicesTEXAS INSTRUMENTS INC·Filed 2017·Granted Jun 11, 2019·0 cites·19 claims
- 2253US10840372B2SOI power LDMOS deviceTEXAS INSTRUMENTS INC·Filed 2018·Granted Nov 17, 2020·0 cites·23 claims
- 2352US9825138B2Field effect transistor and method of makingTEXAS INSTRUMENTS INC·Filed 2016·Granted Nov 21, 2017·0 cites·19 claims
- 2450US11557662B2Junction field effect transistor on silicon-on-insulator substrateTEXAS INSTRUMENTS INC·Filed 2020·Granted Jan 17, 2023·0 cites·15 claims
- 2550US9406774B1Field effect transistor and method of makingTEXAS INSTRUMENTS INC·Filed 2015·Granted Aug 2, 2016·0 cites·13 claims
- 2647US9876071B2Structures to avoid floating RESURF layer in high voltage lateral devicesTEXAS INSTRUMENTS INC·Filed 2015·Granted Jan 23, 2018·0 cites·11 claims
- 2747US2025006728A1Self-clamping resistor and circuit for transistor linear region current matchingTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 2844US8482065B2MOS transistor with a reduced on-resistance and area productLEE ZACHARY K·Filed 2008·Granted Jul 9, 2013·0 cites·20 claims
- 2943US8883595B2Process for forming a short channel trench MOSFET and device formed therebyLEE ZACHARY·Filed 2007·Granted Nov 11, 2014·0 cites·18 claims
- 3037US2018358258A1Single mask level forming both top-side-contact and isolation trenchesTEXAS INSTRUMENTS INC·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →