Inventor · disambiguated record
Cheng-Bo Shu
Also filed as: SHU CHENG-BO
31 granted patents·7 pending applications·32 citations·filing 2016–2025
95Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD38
Top patents by PatentIndex Score
38 records- 0194US11508843B1Semiconductor device having fully oxidized gate oxide layer and method for making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 22, 2022·2 cites·20 claims
- 0293US11575008B2Semiconductor arrangement and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 7, 2023·2 cites·20 claims
- 0392US12094984B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 17, 2024·1 cites·20 claims
- 0492US11532637B2Embedded flash memory cell including a tunnel dielectric layer having different thicknesses over a memory regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·2 cites·20 claims
- 0591US11349035B2Semiconductor device including non-volatile memory cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 31, 2022·2 cites·20 claims
- 0690US10504912B2Seal method to integrate non-volatile memory (NVM) into logic or bipolar CMOS DMOS (BCD) technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·4 cites·20 claims
- 0789US10840333B2Semiconductor arrangement and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 17, 2020·3 cites·20 claims
- 0888US10170488B1Non-volatile memory of semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 1, 2019·5 cites·20 claims
- 0987US12402378B2Semiconductor arrangement including first and second gate electrodes and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 26, 2025·0 cites·20 claims
- 1087US10879257B2Integrated chip having a logic gate electrode and a tunnel dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 29, 2020·3 cites·20 claims
- 1187US10276728B2Semiconductor device including non-volatile memory cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·3 cites·20 claims
- 1285US2024372011A1Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1383US11894425B2Semiconductor arrangement and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 6, 2024·0 cites·20 claims
- 1483US10510767B1Integrated circuit and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 17, 2019·2 cites·20 claims
- 1580US12114503B2Integrated chip including a tunnel dielectric layer which has different thicknesses over a protrusion region of a substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 8, 2024·0 cites·20 claims
- 1680US2025056835A1Integrated circuit structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1779US11990545B2Semiconductor device having fully oxidized gate oxide layer and method for making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 21, 2024·0 cites·20 claims
- 1878US10693018B2Method of manufacturing a semiconductor device including non-volatile memory cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 23, 2020·1 cites·20 claims
- 1978US2025374591A1Semiconductor device having fully oxidized gate oxide layer and method for making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2077US12166121B2Integrated circuit structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 2176US11711917B2Seal method to integrate non-volatile memory (NVM) into logic or bipolar CMOS DMOS (BCD) technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 25, 2023·0 cites·20 claims
- 2275US9799755B2Method for manufacturing memory device and method for manufacturing shallow trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 24, 2017·2 cites·18 claims
- 2373US11424261B2Integrated circuit with different memory gate work functionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 23, 2022·0 cites·20 claims
- 2473US2025267933A1Method of forming high voltage transistor and structure resulting therefromTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2572US12317584B2Method of forming high voltage transistor and structure resulting therefromTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 27, 2025·0 cites·20 claims
- 2669US11688805B2Integrated circuit structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 27, 2023·0 cites·20 claims
- 2767US12144173B2Seal method to integrate non-volatile memory (NVM) into logic or bipolar CMOS DMOS (BCD) technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 12, 2024·0 cites·20 claims
- 2867US11114452B2Seal method to integrate non-volatile memory (NVM) into logic or bipolar CMOS DMOS (BCD) technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 7, 2021·0 cites·20 claims
- 2966US10937795B2Seal method to integrate non-volatile memory (NVM) into logic or bipolar CMOS DMOS (BCD) technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 2, 2021·0 cites·20 claims
- 3066US10879258B2Memory cell comprising a metal control gate with a work function for an enlarged operation windowTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·0 cites·20 claims
- 3161US10672783B2Integrated circuit and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 2, 2020·0 cites·20 claims
- 3260US2025183137A1Semiconductor structures including wire-bond pads and flip-chip bumps and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3357US10269822B2Method to fabricate uniform tunneling dielectric of embedded flash memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 23, 2019·0 cites·20 claims
- 3456US2025194132A1Semiconductor device having split gates and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3556US2024347626A1Ldmos transistor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3651US11121047B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 14, 2021·0 cites·20 claims
- 3745US10505015B2Memory device and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 10, 2019·0 cites·20 claims
- 3841US9997527B1Method for manufacturing embedded non-volatile memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 12, 2018·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →