Inventor · disambiguated record
Hidetoshi Asamura
Also filed as: ASAMURA HIDETOSHI
2 granted patents·1 citations·filing 2009–2011
31Inventor score
Technology areasH10P
Top patents by PatentIndex Score
2 records- 0148US8986448B2Method of manufacturing single crystal 3C-SiC substrate and single crystal 3C-SiC substrate obtained from the manufacturing methodASAMURA HIDETOSHI·Filed 2011·Granted Mar 24, 2015·1 cites·18 claims
- 0243US8563442B2Method for manufacturing nitrogen compound semiconductor substrate and nitrogen compound semiconductor substrate, and method for manufacturing single crystal SiC substrate and single crystal SiC substrateKAWAMURA KEISUKE·Filed 2009·Granted Oct 22, 2013·0 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →