Inventor · disambiguated record
Masami Naito
Also filed as: NAITO MASAMI
21 granted patents·3 pending applications·640 citations·filing 1996–2018
95Inventor score
Top patents by PatentIndex Score
24 records- 0197US6057558ASilicon carbide semiconductor device and manufacturing method thereofDENSON CORP·Filed 1998·Granted May 2, 2000·266 cites·17 claims
- 0295US9518322B2Film formation apparatus and film formation methodNUFLARE TECHNOLOGY INC·Filed 2014·Granted Dec 13, 2016·11 cites·12 claims
- 0395US5714781ASemiconductor device having a gate electrode in a grove and a diffused region under the groveNIPPON DENSO CO·Filed 1996·Granted Feb 3, 1998·157 cites·25 claims
- 0494US9873941B2Film-forming manufacturing apparatus and methodNUFLARE TECHNOLOGY INC·Filed 2015·Granted Jan 23, 2018·5 cites·4 claims
- 0592US6297100B1Method of manufacturing silicon carbide semiconductor device using active and inactive ion speciesDENSO CORP·Filed 1999·Granted Oct 2, 2001·107 cites·32 claims
- 0688US9598792B2Film-forming apparatus and film-forming methodSUZUKI KUNIHIKO·Filed 2012·Granted Mar 21, 2017·3 cites·15 claims
- 0788US6853006B2Silicon carbide semiconductor deviceDENSO CORP·Filed 2003·Granted Feb 8, 2005·41 cites·10 claims
- 0880US6890600B2SiC single crystal, method for manufacturing SiC single crystal, SiC wafer having an epitaxial film, method for manufacturing SiC wafer having an epitaxial film, and SiC electronic deviceTOYOTA CHUO KENKYUSHO KK·Filed 2002·Granted May 10, 2005·16 cites·44 claims
- 0977US7147714B2Manufacturing method of silicon carbide single crystalsDENSO CORP·Filed 2004·Granted Dec 12, 2006·16 cites·23 claims
- 1076US10262863B2Method for manufacturing SiC epitaxial wafer by simultaneously utilizing an N-based gas and a CI-based gas, and SiC epitaxial growth apparatusSHOWA DENKO KK·Filed 2015·Granted Apr 16, 2019·2 cites·9 claims
- 1169US10896831B2Film forming apparatusNUFLARE TECHNOLOGY INC·Filed 2018·Granted Jan 19, 2021·1 cites·10 claims
- 1269US9879359B2Silicon carbide semiconductor film-forming apparatus and film-forming method using the sameDENSO CORP·Filed 2014·Granted Jan 30, 2018·2 cites·14 claims
- 1365US6746787B2Manufacturing method of silicon carbide single crystalsDENSO CORP·Filed 2001·Granted Jun 8, 2004·9 cites·5 claims
- 1463US9570337B2Film formation apparatus and film formation methodNUFLARE TECHNOLOGY INC·Filed 2014·Granted Feb 14, 2017·1 cites·7 claims
- 1556USRE43840ESilicon carbide semiconductor deviceKATAOKA MITSUHIRO·Filed 2010·Granted Dec 4, 2012·1 cites·10 claims
- 1654US8980003B2Method of manufacturing silicon carbide single crystalWATANABE HIROKI·Filed 2010·Granted Mar 17, 2015·2 cites·16 claims
- 1751US8704340B2Stacked single crystal compound semiconductor substratesDENSO CORP·Filed 2013·Granted Apr 22, 2014·0 cites·3 claims
- 1851US2013152853A1Film-forming apparatus and film-forming methodNUFLARE TECHNOLOGY INC·Filed 2012·Application pending·0 cites
- 1947US11107892B2SiC epitaxial wafer and method for producing sameSHOWA DENKO KK·Filed 2018·Granted Aug 31, 2021·0 cites·7 claims
- 2043US10584417B2Film forming apparatus, susceptor, and film forming methodNUFLARE TECHNOLOGY INC·Filed 2015·Granted Mar 10, 2020·0 cites·18 claims
- 2142US9337276B2Silicon carbide semiconductor device having junction barrier Schottky diodeDENSO CORP·Filed 2013·Granted May 10, 2016·0 cites·8 claims
- 2242US8507921B2Single crystal compound semiconductor substrateFUJIBAYASHI HIROAKI·Filed 2012·Granted Aug 13, 2013·0 cites·3 claims
- 2342US2013247816A1Film-forming apparatus for the formation of silicon carbide and film-forming method for the formation of silicon carbideNUFLARE TECHNOLOGY INC·Filed 2013·Application pending·0 cites
- 2438US2019376206A1SiC EPITAXIAL WAFER AND METHOD FOR PRODUCING SAMESHOWA DENKO KK·Filed 2017·Application pending·0 cites
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