Inventor · disambiguated record
Thomas Gehrke
Also filed as: GEHRKE THOMAS · GEHRKE THOMAS E
72 granted patents·12 pending applications·3,910 citations·filing 1982–2025
99Inventor score
Files withMICRON TECHNOLOGY INC22UNIV NORTH CAROLINA STATE21INT RECTIFIER CORP6INFINEON TECHNOLOGIES AMERICAS CORP5NITRONEX CORP5
Top patents by PatentIndex Score
84 records- 0199US6649287B2Gallium nitride materials and methodsNITRONEX CORP·Filed 2000·Granted Nov 18, 2003·248 cites·70 claims
- 0299US6617060B2Gallium nitride materials and methodsNITRONEX CORP·Filed 2002·Granted Sep 9, 2003·317 cites·75 claims
- 0398US9064775B2Gallium nitride semiconductor structures with compositionally-graded transition layerINT RECTIFIER CORP·Filed 2014·Granted Jun 23, 2015·29 cites·20 claims
- 0498US6521514B1Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substratesUNIV NORTH CAROLINA STATE·Filed 1999·Granted Feb 18, 2003·239 cites·35 claims
- 0598US6261929B1Methods of forming a plurality of semiconductor layers using spaced trench arraysUNIV NORTH CAROLINA STATE·Filed 2000·Granted Jul 17, 2001·304 cites·36 claims
- 0698US6177688B1Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substratesUNIV NORTH CAROLINA STATE·Filed 1998·Granted Jan 23, 2001·652 cites·22 claims
- 0797US8592862B2Gallium nitride semiconductor structures with compositionally-graded transition layerINT RECTIFIER CORP·Filed 2012·Granted Nov 26, 2013·18 cites·20 claims
- 0897US8344417B2Gallium nitride semiconductor structures with compositionally-graded transition layerINT RECTIFIER CORP·Filed 2012·Granted Jan 1, 2013·16 cites·20 claims
- 0997US7364988B2Method of manufacturing gallium nitride based high-electron mobility devicesCREE INC·Filed 2005·Granted Apr 29, 2008·87 cites·21 claims
- 1097US7326971B2Gallium nitride based high-electron mobility devicesCREE INC·Filed 2005·Granted Feb 5, 2008·93 cites·19 claims
- 1197US6265289B1Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated therebyUNIV NORTH CAROLINA STATE·Filed 1999·Granted Jul 24, 2001·217 cites·80 claims
- 1297US6255198B1Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed therebyUNIV NORTH CAROLINA STATE·Filed 1999·Granted Jul 3, 2001·275 cites·53 claims
- 1396US9269858B2Engineered substrates for semiconductor devices and associated systems and methodsSCHUBERT MARTIN F·Filed 2011·Granted Feb 23, 2016·23 cites·11 claims
- 1496US8937335B2Gallium nitride devices with aluminum nitride intermediate layerINT RECTIFIER CORP·Filed 2013·Granted Jan 20, 2015·12 cites·20 claims
- 1596US8928034B2Gallium nitride devices with aluminum nitride alloy intermediate layerINT RECTIFIER CORP·Filed 2013·Granted Jan 6, 2015·11 cites·20 claims
- 1696US6686261B2Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated therebyUNIV NORTH CAROLINA STATE·Filed 2003·Granted Feb 3, 2004·66 cites·33 claims
- 1796US6586778B2Gallium nitride semiconductor structures fabricated by pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak postsUNIV NORTH CAROLINA STATE·Filed 2002·Granted Jul 1, 2003·81 cites·59 claims
- 1896US6403451B1Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride postsNOERH CAROLINA STATE UNIVERSIT·Filed 2000·Granted Jun 11, 2002·209 cites·18 claims
- 1996US6380108B1Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated therebyUNIV NORTH CAROLINA STATE·Filed 1999·Granted Apr 30, 2002·205 cites·85 claims
- 2095US8928035B2Gallium nitride devices with gallium nitride alloy intermediate layerINT RECTIFIER CORP·Filed 2013·Granted Jan 6, 2015·9 cites·20 claims
- 2195US7195993B2Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenchesUNIV NORTH CAROLINA STATE·Filed 2004·Granted Mar 27, 2007·82 cites·10 claims
- 2295US6545300B2Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated therebyUNIV NORTH CAROLINA STATE·Filed 2001·Granted Apr 8, 2003·64 cites·17 claims
- 2395US6489221B2High temperature pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substratesUNIV NORTH CAROLINA STATE·Filed 2001·Granted Dec 3, 2002·73 cites·32 claims
- 2495US6376339B2Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts, and gallium nitride semiconductor structures fabricated therebyUNIV NORTH CAROLINA STATE·Filed 2001·Granted Apr 23, 2002·68 cites·39 claims
- 2594US10177229B2Semiconductor material having a compositionally-graded transition layerINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2016·Granted Jan 8, 2019·5 cites·19 claims
- 2694US9437687B2III-nitride based semiconductor structureINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Granted Sep 6, 2016·5 cites·20 claims
- 2794US6602764B2Methods of fabricating gallium nitride microelectronic layers on silicon layersUNIV NORTH CAROLINA STATE·Filed 2001·Granted Aug 5, 2003·68 cites·26 claims
- 2894US6486042B2Methods of forming compound semiconductor layers using spaced trench arrays and semiconductor substrates formed therebyUNIV NORTH CAROLINA STATE·Filed 2001·Granted Nov 26, 2002·71 cites·3 claims
- 2994US6462355B1Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substratesUNIV NORTH CAROLINA STATE·Filed 2000·Granted Oct 8, 2002·58 cites·5 claims
- 3093US11049994B2Light emitting diodes with n-polarity and associated methods of manufacturingMICRON TECHNOLOGY INC·Filed 2017·Granted Jun 29, 2021·3 cites·11 claims
- 3193US8105921B2Gallium nitride materials and methodsWEEKS JR T WARREN·Filed 2008·Granted Jan 31, 2012·18 cites·15 claims
- 3293US6621148B2Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated therebyUNIV NORTH CAROLINA STATE·Filed 2001·Granted Sep 16, 2003·45 cites·43 claims
- 3393US2025359396A1Light emitting diodes with n-polarity and associated methods of manufacturingMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 3492US8420415B2Method for forming a light conversion materialWATKINS CHARLES M·Filed 2010·Granted Apr 16, 2013·8 cites·32 claims
- 3592US8390010B2Solid state lighting devices with cellular arrays and associated methods of manufacturingSILLS SCOTT·Filed 2010·Granted Mar 5, 2013·9 cites·30 claims
- 3692US7095062B2Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated therebyUNIV NORTH CAROLINA STATE·Filed 2005·Granted Aug 22, 2006·15 cites·16 claims
- 3791US9972628B1Conductive structures, wordlines and transistorsMICRON TECHNOLOGY INC·Filed 2016·Granted May 15, 2018·7 cites·19 claims
- 3891US9461119B2Semiconductor structure with compositionally-graded transition layerINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2014·Granted Oct 4, 2016·4 cites·17 claims
- 3991US9437686B2Gallium nitride devices with discontinuously graded transition layerINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2014·Granted Sep 6, 2016·4 cites·17 claims
- 4090US11843072B2Light emitting diodes with n-polarity and associated methods of manufacturingMICRON TECHNOLOGY INC·Filed 2021·Granted Dec 12, 2023·1 cites·20 claims
- 4189US12376425B2Light emitting diodes with n-polarity and associated methods of manufacturingMICRON TECHNOLOGY INC·Filed 2023·Granted Jul 29, 2025·0 cites·20 claims
- 4288US9385278B2Semiconductor growth substrates and associated systems and methods for die singulationMICRON TECHNOLOGY INC·Filed 2015·Granted Jul 5, 2016·5 cites·20 claims
- 4388US8263988B2Solid state lighting devices with reduced crystal lattice dislocations and associated methods of manufacturingBASCERI CEM·Filed 2010·Granted Sep 11, 2012·6 cites·15 claims
- 4488US6864160B2Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride postsUNIV NORTH CAROLINA STATE·Filed 2002·Granted Mar 8, 2005·28 cites·41 claims
- 4588US4675614APhase difference measurement systemROCKWELL INTERNATIONAL CORP·Filed 1982·Granted Jun 23, 1987·47 cites·1 claims
- 4688US2024297269A1Light emitting diodes and associated methods of manufacturingMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 4787US6897483B2Second gallium nitride layers that extend into trenches in first gallium nitride layersUNIV NORTH CAROLINA STATE·Filed 2003·Granted May 24, 2005·27 cites·6 claims
- 4885US10923627B2Light emitting diodes and associated methods of manufacturingMICRON TECHNOLOGY INC·Filed 2017·Granted Feb 16, 2021·1 cites·9 claims
- 4985US7485512B2Method of manufacturing an adaptive AIGaN buffer layerCREE INC·Filed 2006·Granted Feb 3, 2009·15 cites·24 claims
- 5083US8951842B2Semiconductor growth substrates and associated systems and methods for die singulationFANG XIAOLONG·Filed 2012·Granted Feb 10, 2015·6 cites·15 claims
Showing the top 50 of 84 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →