Inventor · disambiguated record
Hon-Sum Philip Wong
Also filed as: WONG HON-SUM P · WONG HON-SUM PHILIP · WONG HON-SUM PHILLIP
77 granted patents·10 pending applications·5,408 citations·filing 1991–2025
99Inventor score
Top patents by PatentIndex Score
87 records- 0199US7465973B2Integrated circuit having gates and active regions forming a regular gratingIBM·Filed 2005·Granted Dec 16, 2008·206 cites·13 claims
- 0299US7402848B2Integrated circuit having gates and active regions forming a regular gratingIBM·Filed 2007·Granted Jul 22, 2008·131 cites·1 claims
- 0399US6891227B2Self-aligned nanotube field effect transistor and method of fabricating sameIBM·Filed 2002·Granted May 10, 2005·178 cites·9 claims
- 0499US6252284B1Planarized silicon fin deviceIBM·Filed 1999·Granted Jun 26, 2001·291 cites·7 claims
- 0599US5877715ACorrelated double sampling with up/down counterIBM·Filed 1997·Granted Mar 2, 1999·365 cites·20 claims
- 0698US6524935B1Preparation of strained Si/SiGe on insulator by hydrogen induced layer transfer techniqueIBM·Filed 2000·Granted Feb 25, 2003·250 cites·31 claims
- 0798US5920274AImage sensor employing non-uniform A/D conversionIBM·Filed 1997·Granted Jul 6, 1999·221 cites·20 claims
- 0897US11342015B1Memory device and memory circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 24, 2022·6 cites·20 claims
- 0997US8119466B2Self-aligned process for nanotube/nanowire FETsAVOURIS PHAEDON·Filed 2011·Granted Feb 21, 2012·515 cites·20 claims
- 1097US7101762B2Self-aligned double gate mosfet with separate gatesIBM·Filed 2005·Granted Sep 5, 2006·54 cites·23 claims
- 1196US7485891B2Multi-bit phase change memory cell and multi-bit phase change memory including the same, method of forming a multi-bit phase change memory, and method of programming a multi-bit phase change memoryIBM·Filed 2003·Granted Feb 3, 2009·125 cites·10 claims
- 1296US6797553B2Method for making multiple threshold voltage FET using multiple work-function gate materialsIBM·Filed 2002·Granted Sep 28, 2004·119 cites·17 claims
- 1396US5773331AMethod for making single and double gate field effect transistors with sidewall source-drain contactsIBM·Filed 1996·Granted Jun 30, 1998·192 cites·10 claims
- 1495US8637374B2Method of fabricating self-aligned nanotube field effect transistorAPPENZELLER JOERG·Filed 2012·Granted Jan 28, 2014·15 cites·4 claims
- 1595US7057923B2Field emission phase change diode memoryIBM·Filed 2003·Granted Jun 6, 2006·86 cites·30 claims
- 1695US6642115B1Double-gate FET with planarized surfaces and self-aligned silicidesIBM·Filed 2000·Granted Nov 4, 2003·85 cites·22 claims
- 1795US6365465B1Self-aligned double-gate MOSFET by selective epitaxy and silicon wafer bonding techniquesIBM·Filed 1999·Granted Apr 2, 2002·169 cites·15 claims
- 1895US6344877B1Image sensor with dummy pixel or dummy pixel arrayIBM·Filed 1997·Granted Feb 5, 2002·252 cites·11 claims
- 1995US6115066AImage sensor with direct digital correlated samplingIBM·Filed 1997·Granted Sep 5, 2000·225 cites·19 claims
- 2094US6580132B1Damascene double-gate FETIBM·Filed 2002·Granted Jun 17, 2003·76 cites·10 claims
- 2194US5898168AImage sensor pixel circuitIBM·Filed 1997·Granted Apr 27, 1999·193 cites·26 claims
- 2293US8138491B2Self-aligned nanotube field effect transistorAPPENZELLER JOERG·Filed 2009·Granted Mar 20, 2012·18 cites·3 claims
- 2393US7598516B2Self-aligned process for nanotube/nanowire FETsIBM·Filed 2005·Granted Oct 6, 2009·24 cites·15 claims
- 2493US6432829B2Process for making planarized silicon fin deviceIBM·Filed 2001·Granted Aug 13, 2002·76 cites·19 claims
- 2592US6628333B1Digital instant camera having a printerIBM·Filed 1997·Granted Sep 30, 2003·183 cites·34 claims
- 2692US5708263APhotodetector arrayIBM·Filed 1996·Granted Jan 13, 1998·158 cites·5 claims
- 2792US5646058AMethod for fabricating a self-aligned double-gate MOSFET by selective lateral epitaxyIBM·Filed 1996·Granted Jul 8, 1997·93 cites·4 claims
- 2892US2025357306A1Method for low-cost, high-bandwidth monolithic system integration beyond reticle limitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2991US7319608B2Non-volatile content addressable memory using phase-change-material memory elementsIBM·Filed 2005·Granted Jan 15, 2008·27 cites·21 claims
- 3091US6466489B1Use of source/drain asymmetry MOSFET devices in dynamic and analog circuitsIBM·Filed 2001·Granted Oct 15, 2002·108 cites·24 claims
- 3191US5488010AMethod of fabricating sidewall charge-coupled device with trench isolationIBM·Filed 1994·Granted Jan 30, 1996·109 cites·4 claims
- 3290US7635856B2Vertical nanotube field effect transistorIBM·Filed 2007·Granted Dec 22, 2009·11 cites·9 claims
- 3390US7005665B2Phase change memory cell on silicon-on insulator substrateIBM·Filed 2004·Granted Feb 28, 2006·65 cites·19 claims
- 3490US6985169B1Image capture system for mobile communicationsLENOVO SINGAPORE PTE LTD·Filed 1998·Granted Jan 10, 2006·131 cites·39 claims
- 3589US7897960B2Self-aligned nanotube field effect transistorIBM·Filed 2009·Granted Mar 1, 2011·10 cites·8 claims
- 3689US2024389356A1Tunnel junction selector mramTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3787US8003453B2Self-aligned process for nanotube/nanowire FETsIBM·Filed 2008·Granted Aug 23, 2011·11 cites·14 claims
- 3887US6982460B1Self-aligned gate MOSFET with separate gatesIBM·Filed 2000·Granted Jan 3, 2006·37 cites·37 claims
- 3987US6448590B1Multiple threshold voltage FET using multiple work-function gate materialsIBM·Filed 2000·Granted Sep 10, 2002·38 cites·11 claims
- 4086US6864520B2Germanium field effect transistor and method of fabricating the sameIBM·Filed 2002·Granted Mar 8, 2005·46 cites·20 claims
- 4186US5898196ADual EPI active pixel cell design and method of making the sameIBM·Filed 1997·Granted Apr 27, 1999·65 cites·8 claims
- 4285US12144184B2Tunnel junction selector MRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 12, 2024·0 cites·20 claims
- 4385US6759710B2Self-aligned double-gate MOSFET by selective epitaxy and silicon wafer bonding techniquesIBM·Filed 2002·Granted Jul 6, 2004·28 cites·19 claims
- 4485US2024387351A1Method for low-cost, high-bandwidth monolithic system integration beyond reticle limitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4584US12431423B2Method for low-cost, high-bandwidth monolithic system integration beyond reticle limitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 30, 2025·0 cites·20 claims
- 4684US5604368ASelf-aligned double-gate MOSFET by selective lateral epitaxyIBM·Filed 1995·Granted Feb 18, 1997·52 cites·7 claims
- 4783US7791141B2Field-enhanced programmable resistance memory cellIBM·Filed 2005·Granted Sep 7, 2010·5 cites·11 claims
- 4881US6026964AActive pixel sensor cell and method of usingIBM·Filed 1997·Granted Feb 22, 2000·51 cites·10 claims
- 4979US11737284B2Tunnel junction selector MRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 22, 2023·0 cites·20 claims
- 5079US11211426B2Tunnel junction selector MRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 28, 2021·1 cites·20 claims
Showing the top 50 of 87 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →