Inventor · disambiguated record
Matthew J. Brightsky
Also filed as: BRIGHTSKY MATTHEW · BRIGHTSKY MATTHEW J · BRIGHTSKY MATTHEW JOSEPH
57 granted patents·8 pending applications·216 citations·filing 2012–2023
98Inventor score
Top patents by PatentIndex Score
65 records- 0198US10707417B1Single-sided liner PCM cell for 3D crossbar PCM memoryIBM·Filed 2019·Granted Jul 7, 2020·14 cites·11 claims
- 0297US10763307B1Stackable cross-point phase-change material memory array with a resistive linerIBM·Filed 2019·Granted Sep 1, 2020·25 cites·20 claims
- 0397US10141503B1Selective phase change material growth in high aspect ratio dielectric pores for semiconductor device fabricationIBM·Filed 2017·Granted Nov 27, 2018·15 cites·14 claims
- 0497US9793323B1Phase change memory with high enduranceMACRONIX INT CO LTD·Filed 2016·Granted Oct 17, 2017·21 cites·19 claims
- 0596US8971527B2Reliable physical unclonable function for device authenticationIBM·Filed 2013·Granted Mar 3, 2015·35 cites·19 claims
- 0695US10374103B1Crystallized silicon vertical diode on BEOL for access device for confined PCM arraysIBM·Filed 2018·Granted Aug 6, 2019·10 cites·20 claims
- 0795US8921820B2Phase change memory cell with large electrode contact areaIBM·Filed 2012·Granted Dec 30, 2014·11 cites·12 claims
- 0894US9627612B2Metal nitride keyhole or spacer phase change memory cell structuresIBM·Filed 2015·Granted Apr 18, 2017·11 cites·10 claims
- 0994US9166161B2Phase change memory cell with large electrode contact areaIBM·Filed 2014·Granted Oct 20, 2015·9 cites·8 claims
- 1093US11621394B2Multi-layer phase change memory deviceIBM·Filed 2020·Granted Apr 4, 2023·2 cites·25 claims
- 1193US10056546B2Metal nitride keyhole or spacer phase change memory cell structuresIBM·Filed 2017·Granted Aug 21, 2018·9 cites·18 claims
- 1291US8946073B2Phase change memory cell with large electrode contact areaIBM·Filed 2013·Granted Feb 3, 2015·6 cites·10 claims
- 1390US11456417B2Integrated phase change memory cell projection liner and etch stop layerIBM·Filed 2020·Granted Sep 27, 2022·2 cites·15 claims
- 1488US12495722B2Suppression of void-formation of PCM materialsIBM·Filed 2021·Granted Dec 9, 2025·1 cites·8 claims
- 1585US10256271B1Phase change memory array with integrated polycrystalline diodesIBM·Filed 2017·Granted Apr 9, 2019·3 cites·16 claims
- 1680US9006700B2Resistive memory with a stabilizerIBM·Filed 2013·Granted Apr 14, 2015·3 cites·11 claims
- 1779US10886464B2Selective phase change material growth in high aspect ratio dielectric pores for semiconductor device fabricationIBM·Filed 2018·Granted Jan 5, 2021·2 cites·17 claims
- 1879US8861736B2Reliable physical unclonable function for device authenticationIBM·Filed 2012·Granted Oct 14, 2014·4 cites·16 claims
- 1978US10930705B2Crystallized silicon vertical diode on BEOL for access device for confined PCM arraysIBM·Filed 2018·Granted Feb 23, 2021·2 cites·20 claims
- 2078US10566531B2Crosspoint fill-in memory cell with etched access deviceIBM·Filed 2017·Granted Feb 18, 2020·2 cites·19 claims
- 2177US10808316B2Composition control of chemical vapor deposition nitrogen doped germanium antimony telluriumIBM·Filed 2018·Granted Oct 20, 2020·2 cites·16 claims
- 2277US9882126B2Phase change storage device with multiple serially connected storage regionsIBM·Filed 2016·Granted Jan 30, 2018·4 cites·13 claims
- 2377US8614117B2Self-aligned process to fabricate a memory cell array with a surrounding-gate access transistorBRIGHTSKY MATTHEW J·Filed 2012·Granted Dec 24, 2013·4 cites·15 claims
- 2476US11889773B2Multi-layer phase change memory deviceIBM·Filed 2023·Granted Jan 30, 2024·0 cites·20 claims
- 2576US10825514B2Bipolar switching operation of confined phase change memory for a multi-level cell memoryIBM·Filed 2018·Granted Nov 3, 2020·4 cites·19 claims
- 2675US10833123B2Phase change memory array with integrated polycrystalline diodesIBM·Filed 2019·Granted Nov 10, 2020·1 cites·9 claims
- 2775US8981326B2Phase change memory cell with heat shieldIBM·Filed 2013·Granted Mar 17, 2015·2 cites·17 claims
- 2874US10211054B1Tone inversion integration for phase change memoryIBM·Filed 2017·Granted Feb 19, 2019·1 cites·17 claims
- 2974US9059404B2Resistive memory with a stabilizerIBM·Filed 2013·Granted Jun 16, 2015·2 cites·8 claims
- 3073US9263336B2Symmetrical bipolar junction transistor arrayIBM·Filed 2014·Granted Feb 16, 2016·3 cites·20 claims
- 3171US10971546B2Crosspoint phase change memory with crystallized silicon diode access deviceIBM·Filed 2019·Granted Apr 6, 2021·1 cites·20 claims
- 3270US8772906B2Thermally insulated phase change material cellsIBM·Filed 2013·Granted Jul 8, 2014·1 cites·3 claims
- 3369US10535713B2Integrated reactive material erasure element with phase change memoryIBM·Filed 2015·Granted Jan 14, 2020·2 cites·19 claims
- 3465US9941004B2Integrated arming switch and arming switch activation layer for secure memoryIBM·Filed 2015·Granted Apr 10, 2018·2 cites·19 claims
- 3562US11723293B2Reactivation of a deposited metal linerIBM·Filed 2021·Granted Aug 8, 2023·0 cites·16 claims
- 3662US11355706B2Single-sided liner PCM cell for 3D crossbar PCM memoryIBM·Filed 2020·Granted Jun 7, 2022·0 cites·16 claims
- 3762US10763374B2Crystallized silicon vertical diode on BEOL for access device for confined PCM arraysIBM·Filed 2019·Granted Sep 1, 2020·0 cites·20 claims
- 3861US12342736B2Phase-change memory cell with mixed-material switchable regionIBM·Filed 2022·Granted Jun 24, 2025·0 cites·20 claims
- 3960US10622562B2Crosspoint fill-in memory cell with etched access deviceIBM·Filed 2019·Granted Apr 14, 2020·0 cites·15 claims
- 4060US8853662B2Self-aligned process to fabricate a memory cell array with a surrounding-gate access transistorIBM·Filed 2013·Granted Oct 7, 2014·0 cites·8 claims
- 4159US11562931B23D stackable bidirectional access device for memory arrayIBM·Filed 2021·Granted Jan 24, 2023·0 cites·19 claims
- 4259US11557342B2Multi-level cell threshold voltage operation of one-selector-one-resistor structure included in a crossbar arrayIBM·Filed 2021·Granted Jan 17, 2023·0 cites·9 claims
- 4359US10312085B2Tone inversion integration for phase change memoryIBM·Filed 2018·Granted Jun 4, 2019·0 cites·3 claims
- 4458US11139025B2Multi-level cell threshold voltage operation of one-selector-one-resistor structure included in a crossbar arrayIBM·Filed 2020·Granted Oct 5, 2021·0 cites·5 claims
- 4557US2022407000A1Memory with laminated cellMACRONIX INT CO LTD·Filed 2021·Application pending·0 cites
- 4656US11647683B2Phase change memory cell with a thermal barrier layerIBM·Filed 2019·Granted May 9, 2023·0 cites·20 claims
- 4756US2024407178A1Phase change memory cell with crystalline structure aligned to seed layerIBM·Filed 2023·Application pending·0 cites
- 4855US9972660B23D phase change memory with high enduranceMACRONIX INT CO LTD·Filed 2017·Granted May 15, 2018·0 cites·20 claims
- 4954US11557343B2Pulsing synaptic devices based on phase-change memory to increase the linearity in weight updateIBM·Filed 2021·Granted Jan 17, 2023·0 cites·20 claims
- 5054US9240324B2Self-aligned process to fabricate a memory cell array with a surrounding-gate access transistorGLOBALFOUNDRIES INC·Filed 2014·Granted Jan 19, 2016·0 cites·10 claims
Showing the top 50 of 65 patent records by PatentIndex Score.
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