Inventor · disambiguated record
David P. Bour
Also filed as: BOUR DAVID · BOUR DAVID P · BOUR DAVID PAUL
151 granted patents·47 pending applications·3,312 citations·filing 1988–2024
99Inventor score
Top patents by PatentIndex Score
198 records- 0199US6455340B1Method of fabricating GaN semiconductor structures using laser-assisted epitaxial liftoffXEROX CORP·Filed 2001·Granted Sep 24, 2002·303 cites·15 claims
- 0299US6365429B1Method for nitride based laser diode with growth substrate removed using an intermediate substrateXEROX CORP·Filed 1999·Granted Apr 2, 2002·312 cites·11 claims
- 0398US9484492B2LED structures for reduced non-radiative sidewall recombinationAPPLE INC·Filed 2015·Granted Nov 1, 2016·42 cites·20 claims
- 0498US6757314B2Structure for nitride based laser diode with growth substrate removedXEROX CORP·Filed 1999·Granted Jun 29, 2004·143 cites·38 claims
- 0597US9865772B2LED structures for reduced non-radiative sidewall recombinationAPPLE INC·Filed 2017·Granted Jan 9, 2018·13 cites·18 claims
- 0697US9601659B2LED structures for reduced non-radiative sidewall recombinationAPPLE INC·Filed 2016·Granted Mar 21, 2017·21 cites·19 claims
- 0796US9368582B2High power gallium nitride electronics using miscut substratesAVOGY INC·Filed 2013·Granted Jun 14, 2016·22 cites·10 claims
- 0896US8502234B2Monolithically integrated vertical JFET and Schottky diodeKIZILYALLI ISIK C·Filed 2011·Granted Aug 6, 2013·19 cites·6 claims
- 0995US10193013B2LED structures for reduced non-radiative sidewall recombinationAPPLE INC·Filed 2017·Granted Jan 29, 2019·10 cites·20 claims
- 1095US6448102B1Method for nitride based laser diode with growth substrate removedXEROX CORP·Filed 1999·Granted Sep 10, 2002·197 cites·12 claims
- 1194US8470619B2Selective decomposition of nitride semiconductors to enhance LED light extractionBOUR DAVID P·Filed 2010·Granted Jun 25, 2013·18 cites·20 claims
- 1294US8000366B2Laser diode with high indium active layer and lattice matched cladding layerPALO ALTO RES CT INC·Filed 2008·Granted Aug 16, 2011·21 cites·6 claims
- 1394US7364991B2Buffer-layer treatment of MOCVD-grown nitride structuresAPPLIED MATERIALS INC·Filed 2006·Granted Apr 29, 2008·30 cites·18 claims
- 1494US5438584ADual polarization laser diode with quaternary material systemXEROX CORP·Filed 1993·Granted Aug 1, 1995·94 cites·27 claims
- 1593US7674352B2System and method for depositing a gaseous mixture onto a substrate surface using a showerhead apparatusAPPLIED MATERIALS INC·Filed 2006·Granted Mar 9, 2010·25 cites·5 claims
- 1693US7638810B2GaN laser with refractory metal ELOG masks for intracavity contactAVAGO TECH ECBU IP SG PTE LTD·Filed 2005·Granted Dec 29, 2009·20 cites·19 claims
- 1793US7560364B2Dislocation-specific lateral epitaxial overgrowth to reduce dislocation density of nitride filmsAPPLIED MATERIALS INC·Filed 2006·Granted Jul 14, 2009·27 cites·23 claims
- 1892US7585769B2Parasitic particle suppression in growth of III-V nitride films using MOCVD and HVPEAPPLIED MATERIALS INC·Filed 2006·Granted Sep 8, 2009·21 cites·38 claims
- 1992US7345324B2Light emitting diodes with graded composition active regionsPHILIPS LUMILEDS LIGHTING CO·Filed 2005·Granted Mar 18, 2008·19 cites·15 claims
- 2092US5412678AMulti-beam, orthogonally-polarized emitting monolithic quantum well lasersXEROX CORP·Filed 1992·Granted May 2, 1995·78 cites·33 claims
- 2192US5396508APolarization switchable quantum well laserXEROX CORP·Filed 1992·Granted Mar 7, 1995·75 cites·29 claims
- 2291US6875627B2Structure and method for index-guided buried heterostructure AlGaInN laser diodesXEROX CORP·Filed 2001·Granted Apr 5, 2005·29 cites·27 claims
- 2391US5383211ATM-polarized laser emitter using III-V alloy with nitrogenXEROX CORP·Filed 1993·Granted Jan 17, 1995·98 cites·12 claims
- 2490US7872272B2Nitride semiconductor ultraviolet LEDs with tunnel junctions and reflective contactPALO ALTO RES CT INC·Filed 2008·Granted Jan 18, 2011·16 cites·20 claims
- 2589US7856040B2Semiconductor light emitting devices with non-epitaxial upper claddingPALO ALTO RES CT INC·Filed 2008·Granted Dec 21, 2010·10 cites·20 claims
- 2689US6967981B2Nitride based semiconductor structures with highly reflective mirrorsXEROX CORP·Filed 2002·Granted Nov 22, 2005·28 cites·39 claims
- 2788US9117839B2Method and system for planar regrowth in GAN electronic devicesKIZILYALLI ISIK C·Filed 2012·Granted Aug 25, 2015·8 cites·12 claims
- 2888US8569153B2Method and system for carbon doping control in gallium nitride based devicesBOUR DAVID P·Filed 2011·Granted Oct 29, 2013·7 cites·21 claims
- 2988US7759689B2Photonic crystal structures and methods of making and using photonic crystal structuresAVAGO TECH ECBU IP SG PTE LTD·Filed 2007·Granted Jul 20, 2010·15 cites·8 claims
- 3088US7215848B2Optical isolator utilizing a micro-resonatorAVAGO TECHNOLOGIES GENERAL IP·Filed 2004·Granted May 8, 2007·36 cites·13 claims
- 3188US6756325B2Method for producing a long wavelength indium gallium arsenide nitride(InGaAsN) active regionAGILENT TECHNOLOGIES INC·Filed 2002·Granted Jun 29, 2004·37 cites·12 claims
- 3288US6233265B1AlGaInN LED and laser diode structures for pure blue or green emissionXEROX CORP·Filed 1998·Granted May 15, 2001·93 cites·37 claims
- 3388US5465263AMonolithic, multiple wavelength, dual polarization laser diode arraysXEROX CORP·Filed 1994·Granted Nov 7, 1995·57 cites·75 claims
- 3487US6771680B2Electrically-pumped, multiple active region vertical-cavity surface-emitting laser (VCSEL)AGILENT TECHNOLOGIES INC·Filed 2002·Granted Aug 3, 2004·25 cites·13 claims
- 3587US5926726AIn-situ acceptor activation in group III-v nitride compound semiconductorsSDL INC·Filed 1997·Granted Jul 20, 1999·90 cites·29 claims
- 3687US5708674ASemiconductor laser or array formed by layer intermixingXEROX CORP·Filed 1995·Granted Jan 13, 1998·80 cites·26 claims
- 3786US8749015B2Method and system for fabricating floating guard rings in GaN materialsDISNEY DONALD R·Filed 2011·Granted Jun 10, 2014·6 cites·11 claims
- 3886US7459380B2Dislocation-specific dielectric mask deposition and lateral epitaxial overgrowth to reduce dislocation density of nitride filmsAPPLIED MATERIALS INC·Filed 2006·Granted Dec 2, 2008·16 cites·28 claims
- 3986US6744800B1Method and structure for nitride based laser diode arrays on an insulating substrateXEROX CORP·Filed 1998·Granted Jun 1, 2004·51 cites·19 claims
- 4086US6618413B2Graded semiconductor layers for reducing threshold voltage for a nitride-based laser diode structureXEROX CORP·Filed 2001·Granted Sep 9, 2003·23 cites·10 claims
- 4186US6163557AFabrication of group III-V nitrides on mesasXEROX CORP·Filed 1998·Granted Dec 19, 2000·76 cites·36 claims
- 4285US6345063B1Algainn elog led and laser diode structures for pure blue or green emissionXEROX CORP·Filed 1999·Granted Feb 5, 2002·73 cites·17 claims
- 4383US10923626B2LED sidewall processing to mitigate non-radiative recombinationAPPLE INC·Filed 2019·Granted Feb 16, 2021·1 cites·17 claims
- 4483US6574256B1Distributed feedback laser fabricated by lateral overgrowth of an active regionXEROX CORP·Filed 2000·Granted Jun 3, 2003·22 cites·8 claims
- 4581US10418519B2LED sidewall processing to mitigate non-radiative recombinationAPPLE INC·Filed 2016·Granted Sep 17, 2019·3 cites·14 claims
- 4681US9159784B2Aluminum gallium nitride etch stop layer for gallium nitride based devicesROMANO LINDA·Filed 2011·Granted Oct 13, 2015·4 cites·11 claims
- 4781US9076827B2Transfer chamber metrology for improved device yieldBOUR DAVID P·Filed 2011·Granted Jul 7, 2015·4 cites·15 claims
- 4881US7502401B2VCSEL system with transverse P/N junctionAVAGO TECHNOLOGIES GENERAL IP·Filed 2005·Granted Mar 10, 2009·6 cites·10 claims
- 4981US7470599B2Dual-side epitaxy processes for production of nitride semiconductor structuresAPPLIED MATERIALS INC·Filed 2006·Granted Dec 30, 2008·8 cites·29 claims
- 5081US7440666B2Buried heterostucture device having integrated waveguide grating fabricated by single step MOCVDAVAGO TECH FIBER IP SG PTE LTD·Filed 2005·Granted Oct 21, 2008·5 cites·14 claims
Showing the top 50 of 198 patent records by PatentIndex Score.
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