Inventor · disambiguated record
Jacques I. Pankove
Also filed as: PANKOVE JACQUES I · PANKOVE JACQUES ISAAC
38 granted patents·1 pending application·1,433 citations·filing 1974–2004
98Inventor score
Top patents by PatentIndex Score
39 records- 0199US4074139AApparatus and method for maskless ion implantationRCA CORP·Filed 1976·Granted Feb 14, 1978·102 cites·7 claims
- 0296US4322253AMethod of making selective crystalline silicon regions containing entrapped hydrogen by laser treatmentRCA CORP·Filed 1980·Granted Mar 30, 1982·132 cites·5 claims
- 0394US4109271AAmorphous silicon-amorphous silicon carbide photovoltaic deviceRCA CORP·Filed 1977·Granted Aug 22, 1978·93 cites·13 claims
- 0492US5070040AMethod and apparatus for semiconductor circuit chip coolingUNIV COLORADO FOUNDATION·Filed 1990·Granted Dec 3, 1991·150 cites·21 claims
- 0592US4985742AHigh temperature semiconductor devices having at least one gallium nitride layerUNIV COLORADO FOUNDATION·Filed 1989·Granted Jan 15, 1991·70 cites·19 claims
- 0690US4339285AMethod for fabricating adjacent conducting and insulating regions in a film by laser irradiationRCA CORP·Filed 1980·Granted Jul 13, 1982·76 cites·11 claims
- 0789US4979002AOptical photodiode switch array with zener diodeUNIV COLORADO FOUNDATION·Filed 1989·Granted Dec 18, 1990·63 cites·18 claims
- 0889US4113514AMethod of passivating a semiconductor device by treatment with atomic hydrogenRCA CORP·Filed 1978·Granted Sep 12, 1978·75 cites·4 claims
- 0988US4862471ASemiconductor light emitting deviceUNIV COLORADO FOUNDATION·Filed 1988·Granted Aug 29, 1989·61 cites·11 claims
- 1085US4254426AMethod and structure for passivating semiconductor materialRCA CORP·Filed 1979·Granted Mar 3, 1981·45 cites·11 claims
- 1183US4224084AMethod and structure for passivating a semiconductor deviceRCA CORP·Filed 1979·Granted Sep 23, 1980·37 cites·12 claims
- 1281US5146314AApparatus for semiconductor circuit chip cooling using a diamond layerUNIV COLORADO FOUNDATION·Filed 1990·Granted Sep 8, 1992·66 cites·3 claims
- 1380US6870204B2Heterojunction bipolar transistor containing at least one silicon carbide layerASTRALUX INC·Filed 2002·Granted Mar 22, 2005·23 cites·44 claims
- 1480US3986065AInsulating nitride compounds as electron emittersRCA CORP·Filed 1974·Granted Oct 12, 1976·16 cites·3 claims
- 1579US4803528AInsulating film having electrically conducting portionsGEN ELECTRIC·Filed 1982·Granted Feb 7, 1989·46 cites·1 claims
- 1678US4114095ASolid state oscilloscopeRCA CORP·Filed 1977·Granted Sep 12, 1978·25 cites·6 claims
- 1776US6527857B1Method and apparatus for growing a gallium nitride bouleASTRALUX INC·Filed 2000·Granted Mar 4, 2003·13 cites·16 claims
- 1876US5703896ASilicon quantum dot laserUNIV COLORADO·Filed 1996·Granted Dec 30, 1997·43 cites·4 claims
- 1974US4069492AElectroluminescent semiconductor device having a body of amorphous siliconRCA CORP·Filed 1976·Granted Jan 17, 1978·19 cites·14 claims
- 2071US4684964ASilicon light emitting device and a method of making the deviceRCA CORP·Filed 1986·Granted Aug 4, 1987·36 cites·2 claims
- 2169US5559822ASilicon quantum dot laserUNIV COLORADO·Filed 1995·Granted Sep 24, 1996·32 cites·16 claims
- 2269US4392011ASolar cell structure incorporating a novel single crystal silicon materialRCA CORP·Filed 1981·Granted Jul 5, 1983·28 cites·5 claims
- 2368US4139858ASolar cell with a gallium nitride electrodeRCA CORP·Filed 1977·Granted Feb 13, 1979·19 cites·7 claims
- 2466US5263041ASurface emitting semiconductor laserUNIV COLORADO FOUNDATION·Filed 1992·Granted Nov 16, 1993·22 cites·22 claims
- 2565US3991339ALight emitting diode with reflectorRCA CORP·Filed 1975·Granted Nov 9, 1976·15 cites·11 claims
- 2657US5930666AMethod and apparatus for packaging high temperature solid state electronic devicesASTRALUX INC·Filed 1997·Granted Jul 27, 1999·20 cites·15 claims
- 2755US4584028ANeutralization of acceptor levels in silicon by atomic hydrogenRCA CORP·Filed 1984·Granted Apr 22, 1986·17 cites·10 claims
- 2853US6169330B1Method and apparatus for packaging high temperature solid state electronic devicesASTRULUX INC·Filed 1999·Granted Jan 2, 2001·19 cites·5 claims
- 2952US4473597AMethod and structure for passivating a PN junctionRCA CORP·Filed 1983·Granted Sep 25, 1984·16 cites·8 claims
- 3046US5136353AOptical switchUNIV COLORADO FOUNDATION·Filed 1990·Granted Aug 4, 1992·13 cites·17 claims
- 3146US4028720APhotovoltaic deviceRCA CORP·Filed 1976·Granted Jun 7, 1977·10 cites·10 claims
- 3245US6893932B2Heterojunction bipolar transistor containing at least one silicon carbide layerASTRALUX INC·Filed 2004·Granted May 17, 2005·2 cites·29 claims
- 3338US6067308AElectroluminescent solid state deviceASTRALUX INC·Filed 1998·Granted May 23, 2000·10 cites·29 claims
- 3437US4742384AStructure for passivating a PN junctionRCA CORP·Filed 1983·Granted May 3, 1988·7 cites·4 claims
- 3537US2001033589A1Solid state short wavelength laser and processFiled 2001·Application pending·0 cites
- 3634US5378902AOptoelectronic maximum identifier for detecting the physical location of a maximum intensity optical signal in a winner-take-all networkUNIV COLORADO·Filed 1993·Granted Jan 3, 1995·5 cites·16 claims
- 3734US4551352AMethod of making P-type hydrogenated amorphous siliconRCA CORP·Filed 1985·Granted Nov 5, 1985·5 cites·6 claims
- 3830US6263006B1Electroluminescent solid state deviceASTRALUX INC·Filed 1999·Granted Jul 17, 2001·1 cites·7 claims
- 3930US4977433AOptoelectronic semiconductor deviceUNIV COLORADO FOUNDATION·Filed 1989·Granted Dec 11, 1990·1 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →