Inventor · disambiguated record
Nobuo Fujiwara
Also filed as: FUJIWARA NOBUO
22 granted patents·2 pending applications·466 citations·filing 1984–2020
96Inventor score
Files withMITSUBISHI ELECTRIC CORP19RENESAS TECH CORP2VICTOR COMPANY OF JAPAN2KYODO DENSHI ENGINEERING CO LT1
Top patents by PatentIndex Score
24 records- 0196US4873493AAudio amplifierVICTOR COMPANY OF JAPAN·Filed 1988·Granted Oct 10, 1989·73 cites·7 claims
- 0288US5442213ASemiconductor device with high dielectric capacitor having sidewall spacersMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Aug 15, 1995·82 cites·13 claims
- 0388US4877509ASemiconductor wafer treating apparatus utilizing a plasmaMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Oct 31, 1989·43 cites·8 claims
- 0481US5435886AMethod of plasma etchingMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Jul 25, 1995·39 cites·4 claims
- 0579US4915979ASemiconductor wafer treating device utilizing ECR plasmaMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Apr 10, 1990·24 cites·6 claims
- 0677US6232209B1Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1999·Granted May 15, 2001·58 cites·7 claims
- 0776US6822334B2Semiconductor device having a layered wiring structure with hard mask coveringRENESAS TECH CORP·Filed 2001·Granted Nov 23, 2004·24 cites·6 claims
- 0874US4982138ASemiconductor wafer treating device utilizing a plasmaMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Jan 1, 1991·19 cites·5 claims
- 0973US11189689B2Semiconductor device including an active region that includes a switchable current pathMITSUBISHI ELECTRIC CORP·Filed 2017·Granted Nov 30, 2021·2 cites·18 claims
- 1069US5534458AMethod of manufacturing a semiconductor device with high dielectric capacitor having sidewall spacersMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jul 9, 1996·27 cites·2 claims
- 1162US4873162AX-ray mask and a manufacture method thereforMITSUBISHI ELECTRIC CORP·Filed 1987·Granted Oct 10, 1989·16 cites·9 claims
- 1261US5668041AMethod of manufacturing a semiconductor device having a capacitorMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Sep 16, 1997·18 cites·1 claims
- 1356US10497850B2Thermoelectric converter and manufacturing method for manufacturing thermoelectric converterMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Dec 3, 2019·0 cites·12 claims
- 1448US12477789B2Semiconductor device having a plurality of pillars and method of manufacturing the semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2020·Granted Nov 18, 2025·0 cites·21 claims
- 1548US5292395AECR plasma reaction apparatus having uniform magnetic field gradientMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Mar 8, 1994·8 cites·9 claims
- 1647US5695597APlasma reaction apparatusMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Dec 9, 1997·7 cites·4 claims
- 1746US9773874B2Silicon carbide semiconductor device and manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 2013·Granted Sep 26, 2017·0 cites·6 claims
- 1845US2009299512A1Semiconductor manufacturing system and methodRENESAS TECH CORP·Filed 2009·Application pending·0 cites
- 1941US6156639AMethod for manufacturing contact structureMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Dec 5, 2000·11 cites·13 claims
- 2041US2006245603A1Volume controllerKYODO DENSHI ENGINEERING CO LT·Filed 2006·Application pending·0 cites
- 2137US5652186ASemiconductor device and a method of manufacturing thereofMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Jul 29, 1997·4 cites·2 claims
- 2237US5304775AMethod of etching a wafer having high anisotropy with a plasma gas containing halogens and in inert elementMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Apr 19, 1994·9 cites·25 claims
- 2334US10453951B2Semiconductor device having a gate trench and an outside trenchMITSUBISHI ELECTRIC CORP·Filed 2015·Granted Oct 22, 2019·0 cites·18 claims
- 2433US4629998AVariable gain equalizer with a mirror circuit having opposite phase relationship between input and output currentsVICTOR COMPANY OF JAPAN·Filed 1984·Granted Dec 16, 1986·2 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →