Inventor · disambiguated record
Yoshihiro Irokawa
Also filed as: IROKAWA YOSHIHIRO
3 granted patents·2 pending applications·56 citations·filing 2002–2013
68Inventor score
Top patents by PatentIndex Score
5 records- 0185US6914273B2GaN-type enhancement MOSFET using hetero structureUNIV FLORIDA·Filed 2003·Granted Jul 5, 2005·45 cites·16 claims
- 0266US7011707B2Production method for semiconductor substrate and semiconductor elementTOYODA GOSEI KK·Filed 2002·Granted Mar 14, 2006·11 cites·40 claims
- 0346US9190483B2AlN single crystal Schottky barrier diode and method of producing the sameNAT INST FOR MATERIALS SCIENCE·Filed 2013·Granted Nov 17, 2015·0 cites·20 claims
- 0433US2012067410A1Schottky-barrier junction element, and photoelectric conversion element and solar cell using the sameMATSUKI NOBUYUKI·Filed 2010·Application pending·0 cites
- 0533US2004077166A1Semiconductor crystal growing method and semiconductor light-emitting deviceFiled 2002·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Yoshihiro Irokawa files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →